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TK30A06J3A
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)

TK30A06J3A
Switching Regulator Applications
Unit: mm

Low drain-source ON-resistance: RDS (ON) = 19 m (typ.)
High forward transfer admittance: |Yfs| = 34 S (typ.)
Low leakage current: IDSS = 10 A (max) (VDS = 60 V)
Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25