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BLD6G21L-50; BLD6G21LS-50
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty
transistor
Rev. 2 -- 17 August 2010 Product data sheet

1. Product profile

1.1 General description
The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution
using NXP's state of the art GEN6 LDMOS technology. This device is perfectly suited for
TD-SCDMA base station applications at frequencies from 2010 MHz to 2025 MHz. The
main and peak device, input splitter and output combiner are integrated in a single
package. This package consists of one gate and drain lead and two extra leads of which
one is used for biasing the peak amplifier and the other is not connected. It only requires
the proper input/output match and bias setting as with a normal class-AB transistor.

Table 1. Typical performance
RF performance at Th = 25