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BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C

General Purpose Transistor COLLECTOR
3 3 MARKING DIAGRAM
3
PNP Silicon 1
1
BASE 2
SOT-23 XX = Device
Code (See
2 1 2 Table Below)
EMITTER

Maximum Ratings ( TA=25 C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage BC856 VCEO -65
BC857 -45 V
BC858,BC859 -30
Collector-Base Voltage BC856 -80
BC857 VCBO -50 V
BC858,BC859 -30
Emitter-Base VOltage VEBO -5.0 V
Collector Current-Continuous IC -100 mAdc
Thermal Characteristics
Characteristics Symbol Max Unit
Total Device Dissipation FR-5 Board (1) PD
(Note 1.)TA=25 C 225 mW
Derate above 25 C 1.8 mW/ C
Thermal Resistance, Junction to Ambient R JA 556 C/W
Total Device Dissipation Alumina
Substrate, (Note 2.) TA=25 C PD 300 mW
Derate above 25 C 2.4 mW/ C
Thermal Resistance, Junction to Ambient R JA 417 C/W
Junction and Storage, Temperature TJ,Tstg -55 to +150 C
1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics Symbol Min Typ Max Unit

Off Characteristics
Collector-Emitter Breakdown Voltage BC856 Series V(BR)CEO -65 - - V
(IC= -10mA) BC857 Series -45 - -
BC858, BC859 Series -30 - -
Collector-Emitter Breakdown Voltage BC856 Series V(BR)CES -80 - - V
(IC=-10