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RENESAS LSIs
M5M5256DFP,VP-55LL,-70LL,-70LLI,
-55XL,-70XL
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5256DFP,VP is 262,144-bit CMOS static RAMs PIN CONFIGURATION (TOP VIEW)
organized as 32,768-words by 8-bits which is f abricated using
A14 1 28 Vcc
high-perf ormance 3 poly silicon CMOS technology . The use of
A12 2 27 /W
resistiv e load NMOS cells and CMOS periphery results in a high
A7 3 26 A13
density and low power static RAM. Stand-by current is small
A6 4 25 A8
enough f or battery back-up application. It is ideal f or the memory
A5 5 24 A9
sy stems which require simple interf ace.
A4 6 23 A11
Especially the M5M5256DVP are packaged in a 28-pin thin small
outline package. A3 7 22 /OE
A2 8 21 A10
A1 9 20 /S
A0 10 19 DQ8
DQ1 11 18 DQ7
FEATURE DQ2 12 17 DQ6
DQ3 13 16 DQ5
Access Oprating Power supply current GND 14 15 DQ4
Ty pe time Temperature Activ e Stand-by
(max) (max) (max) Outline 28P2W-C (FP)
M5M5256DFP,VP-55LL 55ns
0~70