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2N4338/4339/4340/4341
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA)
2N4338 -0.3 to -1 -50 0.6 0.6
2N4339 -0.6 to -1.8 -50 0.8 1.5
2N4340 -1 to -3 -50 1.3 3.6
2N4341 -2 to -6 -50 2 9
FEATURES BENEFITS APPLICATIONS
D Low Cutoff Voltage: 2N4338 <1 V D Full Performance from Low-Voltage D High-Gain, Low-Noise Amplifiers
D High Input Impedance Power Supply: Down to 1 V D Low-Current, Low-Voltage
D Very Low Noise D Low Signal Loss/System Error Battery-Powered Amplifiers
D High Gain: AV = 80 @ 20 mA D High System Sensitivity D Infrared Detector Amplifiers
D High-Quality Low-Level Signal D Ultrahigh Input Impedance
Amplification Pre-Amplifiers
DESCRIPTION
The 2N4338/4339/4340/4341 n-channel JFETs are designed The TO-206AA (TO-18) package is hermetically sealed and
for sensitive amplifier stages at low- to mid-frequencies. Low suitable for military processing (see Military Information). For
cut-off voltages accommodate low-level power supplies and similar products in TO-226AA (TO-92) and TO-236 (SOT-23)
low leakage for improved system accuracy. packages, see the J/SST201 series data sheet.
TO-206AA
(TO-18)
S
1
2 3
D G and Case
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 V Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C
Notes
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 175_C a. Derate 2 mW/_C above 25_C
For applications information see AN102 and AN106.
Document Number: 70240 www.vishay.com
S-40990--Rev. F, 24-May-04 1
2N4338/4339/4340/4341
Vishay Siliconix
SPECIFICATIONS FOR 2N4338 AND 2N4339 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4338 2N4339
Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = -1 mA , VDS = 0 V -57 -50 -50
V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 0.1 mA -0.3 -1 -0.6 -1.8
Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 0.2 0.6 0.5 1.5 mA
VGS = -30 V, VDS = 0 V -2 -100 -100 pA
Gate Reverse Current IGSS
TA = 150_C -4 -100 -100 nA
Gate Operating Currentb IG VDG = 15 V, ID = 0.1 mA -2
pA
Drain Cutoff Current ID(off) VDS = 15 V, VGS = -5 V 2 50 50
Gate-Source Forward Voltagec VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
gfs 0.6 1.8 0.8 2.4 mS
Forward Transconductance
VDS = 15 V VGS = 0 V f = 1 kHz
V, V,
Common-Source
gos 5 15 mS
Output Conductance
Drain-Source On-Resistance rds(on) VDS = 0 V, VGS = 0 V, f = 1 kHz 2500 1700 W
Common-Source
Ciss 5 7 7
Input Capacitance
VDS = 15 V VGS = 0 V f = 1 MHz
V, V, pF
Common-Source
Crss 1.5 3 3
Reverse Transfer Capacitance
nV/
Equivalent Input Noise Voltagec en VDS = 10 V, VGS = 0 V, f = 1 kHz 6
Hz
VDS = 15 V, VGS = 0 V
Noise Figure NF 1 1 dB
f = 1 kHz, RG = 1 MW
SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340 2N4341
Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = -1 mA , VDS = 0 V -57 -50 -50
V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 0.1 mA -1 -3 -2 -6
Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 1.2 3.6 3 9 mA
VGS = -30 V, VDS = 0 V -2 -100 -100 pA
Gate Reverse Current IGSS
TA = 150_C -4 -100 -100 nA
Gate Operating Currentb IG VDG = 15 V, ID = 0.1 mA -2
VGS = -5 V 2 50 p
pA
Drain Cutoff Current ID( ff)
D(off) VDS = 15 V
VGS = -10 V 3 70
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
www.vishay.com Document Number: 70240
2 S-40990--Rev. F, 24-May-04
2N4338/4339/4340/4341
Vishay Siliconix
SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340 2N4341
Parameter Symbol Test Conditions Typa Min Max Min Max Unit
Dynamic
Common-Source
gfs 1.3 3 2 4 mS
Forward Transconductance
VDS = 15 V VGS = 0 V f = 1 kHz
V, V,
Common-Source
gos 30 60 mS
Output Conductance
Drain-Source On-Resistance rds(on) VDS = 0 V, VGS = 0 V, f = 1 kHz 1500 800 W
Common-Source
Ciss 5 7 7
Input Capacitance
VDS = 15 V VGS = 0 V f = 1 MHz
V, V, pF
Common-Source
Crss 1.5 3 3
Reverse Transfer Capacitance
nV/
Equivalent Input Noise Voltagec en VDS = 10 V, VGS = 0 V, f = 1 kHz 6
Hz
VDS = 15 V, VGS = 0 V
Noise Figure NF 1 1 dB
f = 1 kHz, RG = 1 MW
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NPA
b. Pulse test: PW v300 ms, duty cycle v3%.
c. This parameter not registered with JEDEC.
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage Gate Leakage Current
10 5 10 nA
IDSS @ VDS = 10 V, VGS = 0 V
ID = 100 mA
gfs - Forward Transconductance (mS)
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz TA = 125_C 500 mA
8 4 1 nA
IDSS - Saturation Drain Current (mA)
IG - Gate Leakage (A)
6 3 100 pA IGSS @ 125_C
gfs 500 mA
4 IDSS 10 pA
2
ID = 100 mA
TA = 25_C
2 1 1 pA
IGSS @ 25_C
0 0 0.1 pA
0 -1 -2 -3 -4 -5 0 6 12 18 24 30
VGS(off) - Gate-Source Cutoff Voltage (V) VDG - Drain-Gate Voltage (V)
Document Number: 70240 www.vishay.com
S-40990--Rev. F, 24-May-04 3
2N4338/4339/4340/4341
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Output Conductance Common-Source Forward Transconductance
vs. Gate-Source Cutoff Voltage vs. Drain Current
1500 10 2
VGS(off) = -1.5 V VDS = 10 V
rDS(on) - Drain-Source On-Resistance ( )
f = 1 kHz
gfs - Forward Transconductance (mS)
gos 1.6
gos - Output Conductance (