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STP11NM60 - STP11NM60FP
STB11NM60 - STB11NM60-1
N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAK
MDmeshTM Power MOSFET

General features
VDSS
Type RDS(on) ID
(@TJ=TJmax) 3
2 3
1 2
STP11NM60 650V <0.45 11A 1

TO-220 TO-220FP
STP11NM60FP 650V <0.45 11A
STB11NM60 650V <0.45 11A
STB11NM60-1 650V <0.45 11A

High dv/dt and avalanche capabilities 3 3
1 12
100% avalanche tested
D2PAK i2PAK
Low input capacitance and gate charge
Low gate input resistance

Description Internal schematic diagram
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company's PowerMESHTM
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company's proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition's products.

Applications
Switching application

Order codes
Part number Marking Package Packaging
STB11NM60T4 B11NM60 D