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March 1996

NDP6060 / NDB6060
N-Channel Enhancement Mode Field Effect Transistor
General Description Features

These N-Channel enhancement mode power field effect 48A, 60V. RDS(ON) = 0.025 @ VGS=10V.
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density Critical DC electrical parameters specified at elevated
process has been especially tailored to minimize on-state temperature.
resistance, provide superior switching performance, and Rugged internal source-drain diode can eliminate the need
withstand high energy pulses in the avalanche and for an external Zener diode transient suppressor.
commutation modes. These devices are particularly suited
for low voltage applications such as automotive, DC/DC 175