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AO4437
P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO4437 uses advanced trench technology to provide VDS (V) = -12V
excellent RDS(ON), low gate charge and operation with gate ID = -11 A (VGS = -4.5V)
voltages as low as 1.8V. This device is suitable for use as a RDS(ON) < 16m (VGS = -4.5V)
load switch or in PWM applications. It is ESD protected. RDS(ON) < 20m (VGS = -2.5V)
Standard Product AO4437 is Pb-free (meets ROHS & Sony
RDS(ON) < 25m (VGS = -1.8V)
259 specifications). AO4437L is a Green Product ordering
ESD Rating: 4KV HBM
option. AO4437 and AO4437L are electrically identical.

SOIC-8
Top View D

S D
S D
S D G
G D

S

Absolute Maximum Ratings TA=25