Text preview for : cep04n65_ceb04n65_cef04n65.pdf part of CET cep04n65 ceb04n65 cef04n65 . Electronic Components Datasheets Active components Transistors CET cep04n65_ceb04n65_cef04n65.pdf
Back to : cep04n65_ceb04n65_cef04n6 | Home
CEP04N65/CEB04N65
CEF04N65
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY
FEATURES
Type VDSS RDS(ON) ID @VGS
CEP04N65 650V 2.8 4A 10V
CEB04N65 650V 2.8 4A 10V
CEF04N65 650V 2.8 4A d 10V
Super high dense cell design for extremely low RDS(ON). D
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D G
G G
G D D
S S S
S
CEB SERIES CEP SERIES CEF SERIES
TO-263(DD-PAK) TO-220 TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Limit
Parameter Symbol Units
TO-220/263 TO-220F
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS