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TN2404K/TN2404KL/BS107KL
Vishay Siliconix
N-Channel 240 -V (D-S) MOSFET
PRODUCT SUMMARY
Part Number VDS Min (V) rDS(on) (W) VGS(th) (V) ID (A) Qg (Typ)
TN2404K 4 @ VGS = 10 V 0.8 to 2.0 0.2
240 4.87
4 87
TN2404KL/BS107KL 4 @ VGS = 10 V 0.8 to 2.0 0.3
FEATURES BENEFITS APPLICATIONS
D Low On-Resistance: 4 W D Low Offset Voltage D High-Voltage Drivers: Relays, Solenoids,
D Secondary Breakdown Free: 260 V D Full-Voltage Operation Lamps, Hammers, Displays,
D Low Power/Voltage Driven D Easily Driven Without Buffer Transistors, etc.
D Low Input and Output Leakage D Low Error Voltage D Telephone Mute Switches, Ringer Circuits
D Excellent Thermal Stability D No High-Temperature D Power Supply, Converters
"Run-Away" D Motor Control
TO-236 TO-226AA TO-92-18RM
(SOT-23) (TO-92) (TO-18 Lead Form)
S 1 Device Marking D 1
G 1 Front View Device Marking
Front View
3 D "S" TN
G 2 2404KL G 2 "S" BS
S 2 107KL
xxyy
xxyy
"S" = Siliconix Logo
D S "S" = Siliconix Logo
Top View 3 xxyy = Date Code 3
xxyy = Date Code
TN2404K
Top View Top View
Marking Code: K1ywl
K1 = Part Number Code for TN2404K TN2404KL BS107KL
y = Year Code
w = Week Code
l = Lot Traceability
ORDERING INFORMATION
Standard Lead (Pb)-Free
Part Number Part Number Option
TN2404K-T1 TN2404K-T1--E3 With Tape and Reel Folding Option
TN2404KL-TR1 TN2404KL-TR1--E3
Spool Option
BS107KL-TR1 BS107KL-TR1--E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol TN2404K TN2404KL/BS107KL Unit
Drain-Source Voltage VDS 240
V
Gate-Source Voltage VGS "20
TA= 25_C 0.2 0.3
Continuous Drain Current (TJ = 150_C) ID
TA= 70_C 0.16 0.25 A
Pulsed Drain Currenta IDM 0.8 1.4
TA= 25_C 0.36 0.8
Power Dissipation PD W
TA= 70_C 0.23 0.51
Thermal Resistance, Junction-to-Ambient RthJA 350b 156 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on an FR4 board.
Document Number: 72225 www.vishay.com
S-41761--Rev. B , 04-Oct-04 1
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA 240 257
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.8 1.65 2.0
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 192 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS mA
TJ = 55_C 10
VDS = 10 V, VGS =10 V 0.8
On State Drain Currentb
On-State ID( )
D(on) A
VDS = 10 V, VGS = 4.5 V 0.5
VGS = 10 V, ID = 0.3 A 2.2 4
Drain-Source On-Resistanceb rDS(on)
( ) VGS = 4.5 V, ID = 0.2 A 2.3 4 W
VGS = 2.5 V, ID = 0.1 A 2.4 6
Forward Transconductanceb gfs VDS = 10 V, ID = 0.3 A 1.6 S
Diode Forward Voltage VSD IS = 0.3 A, VGS = 0 V 0.8 1.2 V
Dynamica
Total Gate Charge Qg 4.87 8
Gate-Source Charge Qgs VDS = 192 V, VGS = 10 V, ID = 0.5 A 0.56 nC
Gate-Drain Charge Qgd 1.53
td(on) 5 10
Turn-On
Turn On Time
tr VDD = 60 V, RL = 200 W 12 20
nS
td(off) ID ] 0.3 A, VGEN = 10 V, RG = 25 W 35 60
turn-Off Time
tr 16 25
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com Document Number: 72225
2 S-41761--Rev. B , 04-Oct-04
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
1.8 1.4
VGS = 10 thru 3 V TC = -55_C
1.2 25_C
1.5
1.0
125_C
I D - Drain Current (A)
I D - Drain Current (A)
1.2
2.5 V
0.8
0.9
0.6
0.6
0.4
0.3
0.2
2V
0.0 0.0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
5 300
r DS(on) - On-Resistance ( W )
250
4
C - Capacitance (pF)
200
Ciss
3
VGS = 4.5 V
150
2 VGS = 10 V
100
1
50
Crss
Coss
0 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
10 2.2
VDS = 192 V VGS = 10 V
2.0
V GS - Gate-to-Source Voltage (V)
ID = 0.5 A ID = 0.3 A
8 1.8
rDS(on) - On-Resiistance
1.6
6
(Normalized)
1.4 VGS = 4.5 V
ID = 0.2 A
1.2
4
1.0
2 0.8
0.6
0 0.4
0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 72225 www.vishay.com
S-41761--Rev. B , 04-Oct-04 3
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 8
ID = 100 mA
7
r DS(on) - On-Resistance ( W )
1 6
I S - Source Current (A)
ID = 50 mA
5
TJ = -55_C
0.1 4
3
TJ = 25_C
0.01 2
ID = 10 mA
TJ = 150_C 1
0.001 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.3
0.2
0.1 ID = 250 mA
V GS(th) Variance (V)
-0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-50 -25 0 25 50 75 100 125 150
TJ - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, TN2404K Only)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
0.02 t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA =350_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 72225
4 S-41761--Rev. B , 04-Oct-04
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient
(TO-226AA, TN2404KL and TO-92-18RM, BS107KL Only)
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1 Notes:
0.05 PDM
0.1
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
0.01 2. Per Unit Base = RthJA = 156_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
0.1 1 10 100 1K 10 K
t1 - Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72225.
Document Number: 72225 www.vishay.com
S-41761--Rev. B , 04-Oct-04 5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1