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TECHNICAL DATA

LOW POWER NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/391

Devices Qualified Level
2N3019 2N3057A 2N3700 JAN
2N3019S 2N3700S JANTX
JANTXV
JANS

MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 140 Vdc
TO-39* (TO-205AD)
Emitter-Base Voltage VEBO 7.0 Vdc 2N3019, 2N3019S
Collector Current IC 1.0 Adc
Total Power Dissipation
@ TA = +250C(1) W
2N3019; 2N3019S 0.8
2N3057A 0.4 TO- 18* (TO-206AA)
2N3700 0.5 2N3700
2N3700UB PT 0.4
@ TC = +250C(2) W
2N3019; 2N3019S 5.0
2N3057A 1.8
2N3700 1.8 TO-46* (TO-206AB)
2N3700UB 1.16
0 2N3057A
Operating & Storage Jct Temp Range TJ, Tstg -55 to +175 C

1) Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A;
2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for TA +250C.
3 PIN SURFACE MOUNT*
2) Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S;
10.3 mW/0C for types 2N3057A, 2N3700, & 2N3700UB for TC +250C.
2N3700UB
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V(BR)CBO 140 Vdc
IC = 100