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August 1997
FDV303N
Digital FET, N-Channel
General Description Features
These N-Channel enhancement mode field effect transistors are 25 V, 0.68 A continuous, 2 A Peak.
produced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 0.45 @ VGS = 4.5 V
technology. This very high density process is tailored to minimize RDS(ON) = 0.6 @ VGS= 2.7 V.
on-state resistance at low gate drive conditions. This device is
designed especially for application in battery circuits using either Very low level gate drive requirements allowing direct
one lithium or three cadmium or NMH cells. It can be used as an operation in 3V circuits. VGS(th) < 1.5V.
inverter or for high-efficiency miniature discrete DC/DC
Gate-Source Zener for ESD ruggedness.
conversion in compact portable electronic devices like cellular
>6kV Human Body Model
phones and pagers. This device has excellent on-state
resistance even at gate drive voltages as low as 2.5 volts. Compact industry standard SOT-23 surface mount
package.
Alternative to TN0200T and TN0201T.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16
Mark:303
D
G S
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter FDV303N Units
VDSS Drain-Source Voltage, Power Supply Voltage 25 V
VGSS Gate-Source Voltage, VIN 8 V
ID Drain/Output Current - Continuous 0.68 A
- Pulsed 2
PD Maximum Power Dissipation 0.35 W
TJ,TSTG Operating and Storage Temperature Range -55 to 150