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October 1996

NDP5060L / NDB5060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features
These logic level N-Channel enhancement mode power 26 A, 60 V. RDS(ON) = 0.05 @ VGS= 5 V
field effect transistors are produced using Fairchild's RDS(ON) = 0.035 @ VGS= 10 V.
proprietary, high cell density, DMOS technology. This
Critical DC electrical parameters specified at elevated
very high density process has been especially tailored temperature.
to minimize on-state resistance, provide superior
switching performance, and withstand high energy Rugged internal source-drain diode can eliminate the need
pulses in the avalanche and commutation modes. for an external Zener diode transient suppressor.
These devices are particularly suited for low voltage
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