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PHU/PHD78NQ03LT
N-channel TrenchMOS logic level FET
Rev. 05 -- 27 July 2005 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
s Logic level threshold s Fast switching
1.3 Applications
s Computer motherboards s DC-to-DC converters
1.4 Quick reference data
s VDS 25 V s ID 75 A
s RDSon 9 m s QGD = 4 nC (typ)
2. Pinning information
Table 1: Pinning
Pin Description Simplified outline Symbol
1 gate (G)
mb mb D
2 drain (D) [1]
3 source (S)
G
mb mounting base;
connected to drain mbb076 S
2
1 3
1 2 3
SOT533 (IPAK) SOT428 (DPAK)
[1] It is not possible to make a connection to pin 2 of the SOT428 package.
Philips Semiconductors PHU/PHD78NQ03LT
N-channel TrenchMOS logic level FET
3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
PHU78NQ03LT IPAK plastic single-ended package; 3 leads (in-line) SOT533
PHD78NQ03LT DPAK plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT428
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage 25