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AO4407A
P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO4407A uses advanced trench technology to VDS = -30V
provide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -10V)
with a 25V gate rating. This device is suitable for use as RDS(ON) < 11m (VGS = -20V)
a load switch or in PWM applications. Standard Product RDS(ON) < 13m (VGS = -10V)
AO4407A is Pb-free (meets ROHS & Sony 259 RDS(ON) < 38m (VGS = -10V)
specifications).

UIS TESTED!
RG, CISS, COSS, CRSS TESTED!

D
SOIC-8
Top View

S D
S D
S D
G
G D
S

Absolute Maximum Ratings TA=25