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CEP12N65/CEB12N65
CEF12N65
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY

FEATURES
Type VDSS RDS(ON) ID @VGS
CEP12N65 650V 0.73 12A 10V
CEB12N65 650V 0.73 12A 10V
CEF12N65 650V 0.73 12A d 10V

Super high dense cell design for extremely low RDS(ON). D
High power and current handing capability.
Lead-free plating ; RoHS compliant.

D G

G G
G D D
S S S S
CEB SERIES CEP SERIES CEF SERIES
TO-263(DD-PAK) TO-220 TO-220F

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Limit
Parameter Symbol Units
TO-220/263 TO-220F
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS