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June 1997
NDS336P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
SuperSOTTM-3 P-Channel logic level enhancement mode power -1.2 A, -20 V, RDS(ON) = 0.27 @ VGS= -2.7 V
field effect transistors are produced using Fairchild's RDS(ON) = 0.2 @ VGS = -4.5 V.
proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state Very low level gate drive requirements allowing direct
resistance. These devices are particularly suited for low voltage operation in 3V circuits. VGS(th) < 1.0V.
applications such as notebook computer power management,
Proprietary package design using copper lead frame for
portable electronics, and other battery powered circuits where
superior thermal and electrical capabilities.
fast high-side switching, and low in-line power loss are needed
in a very small outline surface mount package. High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
Compact industry standard SOT-23 surface Mount
package.
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D
G S
Absolute Maximum Ratings T A = 25