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RN1114F~RN1118F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1114F,RN1115F,RN1116F,RN1117F,RN1118F

Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications Unit: mm

With built-in bias resistors.
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2114F to 2118F

Equivalent Circuit and Bias Resistor Values

Type No. R1 (k) R2 (k)

RN1114F 1 10
RN1115F 2.2 10
RN1116F 4.7 10
RN1117F 10 4.7
RN1118F 47 10
ESM

JEDEC
JEITA
TOSHIBA 2-2HA1A
Weight: 2.3 mg (typ.)
Absolute Maximum Ratings (Ta = 25