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June 1996
NDT452AP
P-Channel Enhancement Mode Field Effect Transistor
General Description Features
Power SOT P-Channel enhancement mode power field -5A, -30V. RDS(ON) = 0.065 @ VGS = -10V
effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.1 @ VGS = -4.5V.
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance High density cell design for extremely low RDS(ON).
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as High power and current handling capability in a widely used
notebook computer power management and DC motor surface mount package.
control.
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D D
G D S G S
Absolute Maximum Ratings T A = 25