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Output Transistors
PRODUCT GUIDE
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Horizontal-Deflection Output Transistors
PRODUCT GUIDE
1
Outline
Toshiba has developed a range of fifth-generation horizontal-deflection-output transistors (HV-Trs). Radical redesign of the emitter electrode and the contact pattern has yielded significant improvements, resulting in higher current density and superior electrical characteristics compared to those of fourth-generation products. Toshiba's propriety glassmesa structure results in a high breakdown voltage. Thanks to Toshiba's wealth of experience and the wide variety of products which the company can offer, Toshiba horizontal-deflection-output transistors are used World-wide in color TVs and video display monitors.
2
Appearance, Package and Weight
The photographs below show the products and their markings. The packages shown are is the straight-lead packages used for standard products.
Appearance
TO-3P(H)IS TO-3P(LH)
2SC5411
2SC5570
5.5g ( typ. )
9.75g ( typ. )
Package dimensions
TO-3P(H)IS
15.5 ± 0.5
4.5
(Unit : mm)
TO-3P(LH)
3.0 ± 0.3
3.6 ± 0.3
10° 10.0
10°
20.5 max
3.3 ± 0.2
6.0
26.5 ± 0.5
22.0 ± 0.5
2.0
5° 5°
1.5
2.5
2.3 max 0.95 max
2.5 3.0 + 0.3 1.0 0.25
5.45
+ 0.25 0.9 0.1
5.45
5.5 ± 0.3
5.45 ± 0.15
+ 0.25 0.6 0.10
5.45 ± 0.15
5.2 max
1.5
2.8
20.0 ± 0.6
16.4 min
1
2
3
2.0
1. Base 2. Collector 3. Emitter
1
2
3
1. Base 2. Collector (heat sink) 3. Emitter
3.3
2.0
4.0
5°
2.50
1.5
11.0
2.0
26.0 ± 0.5
23.0
1.2
4.0
3
3
Device Trends
Market trends and the development of horizontal-deflection output transistors
Device Trends
Market requirements
TV Wide-screen TVs HDTVs / Projectors Multimedia-compatible TVs Digital TVs
resolution · Improved in screen525p, 1125i,quality Screen resolution: 780p Progressive system is improved Starting grand wave digital broadcasting Various appllications such as DVDs and Cable TVs Various screen size Flat screen Low loss
Video display monitors
· Wide-screen (4 : 3) > (16 : 9) aspect ratio: · Large screen size Flat screen · · Low loss · Lower prices
· High horizontal frequency 21 inches fH = 120 kHz > 135 kHz · Large screen size inches > 17 inches Standard size: 15 · Low pricepart count Reduced · Low loss · Flat screen
(driving circuit and resonating capacitor are fixed)
· · ·
Development of Horizontal-Deflection Output Transistors
Emitter contact shape and chip size optimization
· Enhancement of 1700 V product line · Low price due to reduction in chip size
· Development of 2000-V products · Development of products incorporating diodes for use in digital TVs · Shorter trr · Reduced saturation voltage VCE(sat) = 3 V (max) devices housed in · High-current packages TO-3P(H)IS · Reduced variation in product characteristics
21-A products available
Reduced switching loss to · high-frequency operation(ttf parts) due(max) f = 150 ns Reduced saturation voltage at high currents ·V CE(sat) = 3 V (max) devices housed in · High-current packages TO-3P(H)IS allowable · Increased IS 65 Wpower dissipation TO-3P(H) > 75 W 21-A products available TO-3P(LH)
· Reduced variation in product characteristics
200 W > 220 W
Fourth generation of horizontaldeflection output transistors
Fifth generation of horizontal-deflection output transistors
4
1 2
Features of Fourth and Fifth Generation
Toshiba's proprietary "glass mesa" structure
Glass passivation
High breakdown capability
Contact shape Conventional comb type
The product features a glass mesa structure, the use of which yields a wide forward- and reverse-biased safe operating area.
Emitter
N+ P
Base
Low saturation voltage
N N+
VCE(sat) = 3 V (max) Note: Used for 2SC-Series devices without damper diodes.
Collector
B
E
3
Wider range of optimum drive conditions
Fluctuation in optimum drive conditions due to variation in device quality has been minimized for ease of design.
Fourth and fifth-generation mesh type
3
Revised emitter contact shape and optimized chip size
Chip design has been optimized using Toshiba simulation technology. The emitter's contact area has been widened by changing the contact shape below the emitter electrode from comb type to the new mesh type. As a result, the saturation voltage (VCE(sat)) and fall time (tf) have both been reduced, thus reducing switching loss.
B
E
4
5
· Features
Comparison of Product Characteristic Curve, Features and Emitter-Contact Design
Design
Emitter contact shape
Generation
Typical Products and Waveforms
TVs Video displays
·Main application
First Generation
@fH, ICP, IB1(end), VCP @15.75kHz, 5A, 1A, 1200V @100kHz, 8A, 1A, 1200V ( t, IC, VCE) / div
Comb type I
( 200ns, 1A, 10v) / div
2SD1556 (1500 V / 6A)
( 50ns, 1A, 10v) / div
·TVs
· High-voltage 1500 V · Improved R-SOA · Improved switching speeds fH(max) = 32 kHz · Development of TO-3P(H)IS Package
IC
B
STRIPE type
E
OA, OV
VCE
tstg Loss tf Loss
Second Generation
2SD2253 (1700 V / 6A)
2SC4290A (1500 V / 20A)
IC
·TVs
· High-current devices products · Improved switching speeds fH(max) = 64 kHz · Development of TO-3P(LH) Package
IC
·Video displays
B
E
VCE
OA, OV
VCE
OA, OV
tstg Loss
tf Loss
tstg Loss
tf Loss
Third Generation
Comb type II
2SD2553 (1700 V / 8A)
2SC5142 (1500 V / 20A)
IC
·TVs
·Video displays
· Improvements over first-generation products · Improvements over second-generation products · Improved switching speeds fH(max) = 80 kHz
IC
VCE
VCE
OA, OV
B
E
OA, OV tstg Loss
tf Loss
tstg Loss
tf Loss
Fourth Generation
·TVs
Mesh type I or Crystal-mesh type
2SD2638 (1700 V / 7A)
2SC5445 (1500 V / 20A)
IC
·Digital TVs
· Improvements over first- and third-generation products
IC
··Video displaysover Improvements
· Development of new 2000-V products third-generation products · Improved switching speeds fH(max) = 130 kHz
VCE VCE
OA, OV
B
Mesh type II
E
OA, OV
tstg Loss
tf Loss
tstg Loss tf Loss
Fifth Generation
2SC5695 (1500 V / 22A)
IC
·Digital TVs
·Video displays
· Enhanced 2000-V product line · Improved speeds for products incorporating damper diodes · Improvements over fourth-generation products · Reduced loss · Improvement in drivability
VCE
B
E
OA, OV
tstg Loss tf Loss
5
6
1
Product No.
New Products
Maximum Ratings VCBO IC PC (V ) (A) (W ) 28 220 1700 17 75 1500 15 75 1700 18 200 1500 16 200 1700 22 200 1500 21 75 1500 14 55 1500 28 210 1700
For video displays
Target Use 21-inch, 130 kHz 19-inch, 110 kHz 19-inch, 90 kHz 19-inch, 120 kHz 19-inch, 100 kHz 21-inch, 130 kHz 19-inch, 120 kHz 19-inch, 92 kHz 21-inch, 130 kHz Remarks Note
2SC5570 2SC5587 2SC5588 2SC5589 2SC5590 2SC5695 2SC5717 *(S3D20) *(S3D21)
Device with highest IC (max) ratings High-current version of 2SC5411 1700-V version of 2SC5411 2SC5587 and 2SC5589 use same chip. 2SC5588 and 2SC5590 use same chip. Equivalent to 2SC5445 2SC5717 and 2SC5695 use same chip. Equivalent to 2SC5411 5 Equivalent to 2SC5570 5 5: Production schedules are provisional.
2
For color TVs
Maximum Ratings VCBO IC PC (V ) (A) (W ) 1700 7 50 Target Use 28-inch, 15.75 kHz Equivalent to 2SD2553 Remarks Note
Product No.
2SD2638
3
For digital TVs
Maximum Ratings VCBO IC PC (V ) (A) (W ) 1700 28 220 1700 50 15 1700 16 50 2000 22 220 1700 8 55 2000 16 210 2000 210 16 1700 28 210 Target Use 32-inch, 32 kHz~ 24-inch, 32 kHz 28-inch, 32 kHz ~ 32-inch, 32 kHz 32-inch, 32 kHz 32-inch, 32 kHz 32-inch, 32 kHz 32-inch, 32 kHz~ Remarks Device with highest IC (max) ratings 1700-V version of 2SC5411 2SC5588 and 2SC5590 use same chip. VCBO = 2000 V series Built-in damper diode (High-current version of 2SC5143) VCBO = 2000 V series VCBO = 2000 V series (built-in damper diode) Equivalent to 2SC5570 Note
Product No.
2SC5570 2SC5588 2SC5590 2SC5612 2SC5716 *(2SC5748) *(2SC5749) *(S3D21)
5 5 5 5: Production schedules are provisional.
7
Package PC
Product Line Matrix
VCBO = 1500 V VCBO = 1700 V
TO-3P(H)IS 40 W to 75 W Built-in No built-in damper diode damper diode 2SD2550
VCBO = 2000 V
TO-3P(LH) TO-3P(LH) 180 W to 220 W 180 W to 220 W No built-in Built-in No built-in damper diode damper diode damper diode
TO-3P(H)IS TO-3P(LH) 40 W to 75 W 180 W to 220 W Built-in No built-in No built-in **IC (sat) damper diode damper diode damper diode 2SD2599 3A 2SD2586 3.5 A 2SD2499 2SD2498 4A S2055N S2000N 4.5 A 2SD2539 5A 2SC5339 5.5 A 2SD2500 2SC5280 6A 2SC5386 2SD2559 2SC5404 7A 2SC5387 8A 2SC5411 2SC5421 11 A *(S3D20) 12 A 2SC5587 2SC5589 14 A 2SC5445 15 A 2SC5717 2SC5695 17 A 22 A
2SD2551
2SD2638 2SD2553 2SC5716
2SC5422 2SC5588 2SC5590 2SC5446
*(2SC5749)
*(2SC5748)
2SC5612 2SC5570 *(S3D21)
Notes:
6
*(
**: IC(sat) is value of IC for VCE (sat). : 3rd generation (old design) : 4th generation (new design) : 5th generation (new design) ) : 5th generation (new design under development)
8
1
Product No.
Characteristics List
Maximum Ratings VCBO (V)
1500 1500 1500 1500 1500 1500 1500 1700 1500 1700 1700 1500 1700 1500 1700 2000 1500 1700 1500 2000 2000 1500 1700
2SC Series
Built-in damper diode hFE Min ()
4.0 4.0 4.3 4.3 4.0 4.0 4.0 4.5 4.5 4.0 4.5 5.0 4.8 5.0 4.8 4.8 4.5 3.8 4.5 4.8 4.8 4.0 4.5
VCE(sat) Max @5V/IC ( A)
6 5 6 8 7 11 11 11 15 14 22 14 12 14 12 17 17 6 17 12 12 11 22 (V) 5 5 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 5 3 3 3 3 3
Switching Time (Max) @ IB (A)
1.5 1.25 1.5 2 1.75 2.75 2.75 2.75 3.75 3.5 5.5 3.5 3 3.5 3 4.25 3.75 1.5 3.75 3 3 2.75 5.5 (µs) 6.0 6.0 3.5 3.5 3.5 3.5 3.5 3.5 2.2 2.3 1.6 2.0 2.0 2.0 2.0 5.0 2.1 5.0 2.1 5.0 5.0 3.5 1.6
IC
(A) 8 7 8 10 9 14 15 15 20 18 28 17 15 18 16 22 22 8 21 16 16 14 28
PC
(W) 50 50 50 50 50 60 180 200 200 200 200 75 75 200 200 220 200 55 75 210 210 55 210
Max ()
8.5 8.0 7.5 7.8 8.0 8.0 8.0 8.5 8.5 8.0 7.5 8.0 8.0 8.0 8.0 9.0 8.5 9.0 8.5 7.5 9.0 8.0 7.5
@ IC ( A)
6 5 6 8 7 11 11 11 15 14 22 14 12 14 12 17 17 6 17 12 12 11 22
tstg
tf
(µs) 0.50 0.50 0.30 0.30 0.30 0.30 0.30 0.30 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.35 0.15 0.35 0.15 0.35 0.35 0.30 0.15
@ fH (kHz)
32 32 64 64 64 64 64 64 100 100 130 100 100 100 100 32 100 32 100 32 32 90 130
@ Icp ( A)
6.0 5.0 5.0 6.0 5.5 8.5 8.5 8.0 8.0 7.0 8.0 7.5 6.5 7.5 6.5 8.0 8.0 5.5 8.0 8.0 8.0 6.5 8.0
Generation
4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th
2SC5280 2SC5339 2SC5386 2SC5387 2SC5404 2SC5411 2SC5421 2SC5422 2SC5445 2SC5446 2SC5570 2SC5587 2SC5588 2SC5589 2SC5590 2SC5612 2SC5695 2SC5716 2SC5717 *(2SC5748) *(2SC5749) *(S3D20) *(S3D21)
5th
4th
5th 5th 5th 5th 5th
2
2SD Series
Maximum Ratings Built-in damper diode hFE Min ()
5 5 4 5 8 5 5 5 4.4 8 4.5
VCE(sat) Max @5V/IC ( A)
4 4 6 5 1 4 6 6 3.5 0.5 5.5 (V) 5 5 3 5 8 5 5 5 5 8 5
Switching Time (Max) @ IB (A)
0.8 0.8 1.5 1 0.8 0.8 1.2 1.2 0.8 0.8 1.2
Product No.
VCBO (V)
1500 1500 1500 1500 1700 1700 1700 1500 1500 1500 1700
IC (A)
6 6 10 7 4 5 8 8 5 3.5 7
PC (W)
50 50 50 50 50 50 50 50 50 40 50
Max ()
9 9 8 9 22 10 9 9 8.5 25 7.5
@ IC ( A)
4 4 6 5 3 4 6 6 3.5 3 5.5
tstg (µs)
10 11 11 9 10 10 12 12 10 10 9
tf
(µs) 0.7 0.6 0.7 0.6 0.6 1.0 0.7 1.0 0.6 1.0 0.8
@ fH (kHz)
15.75 15.75 15.75 15.75 15.75 15.75 15.75 15.75 15.75 15.75 15.75
@ Icp ( A)
4 4 6 5 3 4 6 6 3.5 3 5.5
Generation
3rd 3rd 3rd 3rd 3rd 3rd 3rd 4th 4th 4th 4th
2SD2498 2SD2499 2SD2500 2SD2539 2SD2550 2SD2551 2SD2553 2SD2559 2SD2586 2SD2599 2SD2638
3
S2000 / S2055 Series
Maximum Ratings Built-in damper diode hFE Min ()
4.5 4.5
VCE(sat) Max @5V/IC ( A)
4.5 4.5 (V) 5 5
Switching Time (Max) @ IB (A)
1 1
Product No.
VCBO (V)
1500 1500
IC (A)
8 8
PC (W)
50 50
Max ()
9 9
@ IC ( A)
4.5 4.5
tstg (µs)
12 11
tf
(µs) 0.7 0.6
@ fH (kHz)
15.75 15.75
@ Icp ( A)
4.5 4.5
Generation
3rd 3rd
S2000N S2055N
*(
)
: 3rd generation (old design) : 4th generation (new design) : 5th generation (new design) : 5th generation (new design under development)
7
9
1
Recommended Peak Collector Current for Actual Use Icp (A)
Application Map
Example
(Reference only)
: 3rd Gen. (old design) : 4th Gen. (new design)
Generations
2SC Series
2SDXXXX 2SCXXXX
2SCXXXX
*(2SCXXXX)
: 5th Gen. (new design) : under development
24 22
2SC5411: (H) *(S3D20) : (H) 2SC5421: (LH) 2SC5588: (H) 2SC5590: (LH) 2SC5422: (LH) *(2SC5748) : (LH) *(2SC5749) : (LH) 2SC5612: (LH)
Note
DAMPER
„ : Built-in damper fH (max) = 32kHz @without additional Damper diode
20 18 16 14 12 10
# # # $ „$ $
VCBO
# : VCBO = 1700V $ : VCBO = 2000V (Another 1500V)
PACKAGE
(H) : TO-3P(H)IS
(Full mold type)
(LH) : TO-3P(LH)
2SC5387: (H)
8
„ 2SC5280: (H) 2SC5404: (H)
# *(S3D21): (LH) # 2SC5570: (LH)
6 4 2 0 0 20 40 60 80 100 120 140
2SC5386: (H)
„ 2SC5339: (H) „# 2SC5716: (H)
2SC5717: (H) 2SC5445: (LH) 2SC5695: (LH)
2SC5587: (H) 2SC5589: (LH) # 2SC5446: (LH)
Horizontal Frequency fH (kHz)
2
Recommended Peak Collector Current for Actual Use Icp (A)
2SD / S2000 / S2055 Series
8
„ 2SD2559: (H) 2SD2500: (H) „# 2SD2553: (H) „# 2SD2638: (H) „ 2SD2539: (H)
Note
DAMPER
7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140
„ : Built-in damper fH (max) = 32kHz @without additional Damper diode
VCBO
# : VCBO = 1700V $ : VCBO = 2000V (Another 1500V)
S2000N: (H) „ S2055N: (H)
„# 2SD2551: (H) 2SD2498: (H) „ 2SD2499: (H) „ 2SD2586: (H) „# 2SD2550: (H) „# 2SD2599: (H)
PACKAGE
(H) : TO-3P(H)IS
(Full mold type)
(LH) : TO-3P(LH)
Horizontal Frequency fH (kHz)
8
10
Basic Circuit Structure and Operating Waveform of Horizontal-Deflection Output
Main operations
Cy Damper diode operation operation
Measurement conditions
fH = 69 kHz (duty 50%) ICP = 5 A VCP = 1200 V
ts
HV-Tr operation
tr
HV-Tr operation Cy Damper diode operation operation
Operating waveform example
Basic circuit structure
OV VBE
IC Drive Circuit IB VCE(HV-Tr) VF(Damper diode) SBD VBE IE
IF Cy
ICy Ly
ILy
OA
IB IB1(end) IB1(end) + IB2 tstg
dIB/dt =
tstg
IB2 0.9 x ICP ICP
HV-Tr
Damper diode
VCC
Measurement range
X-axis
t (time) 2µs / div
OA IC
0.1 x ICP tf
Y-axis
VBE (Base-emitter voltage) IB (Base current ) IC (Collector current ) IE (Reverse emitter current ) IF (Forward current ) VCE (Collector-emitter voltage) ILY (Deflection coil current ) ICY (Resonance capacitor current ) 5V / div 2A / div 2A / div 2A / div 2A / div 200V / div 2A / div 2A / div
ICy OA OA IE IF (Damper diode)
Enlarged wave forms of IB and IC
OA
IB
OA
IB1(end)
OA ILy
tstg
IB2
tr =
ts Ly Cy
tr
0.9 x ICP ICP IC
OA
VCP
0.1 x ICP tf
OV VCE(HV-Tr) VF(Damper-diode)
2µs / div
9
11 Switching Data of 2SC5695
1
Test condition · @ TC = 25°C · fH = 105 kHz (duty 50%, continuous opration) · · ICP = 6.5 A VCP = 953V (Vcc2 = 107 V) ·· ·· ICP = 8.5 A VCP = 1220V (Vcc2 = 140 V) · ·
(Reference only)
· dIB / dt = 4.0A/µs (VCC1 = 24V) · Ly = 63 µH, Cy = 4000 pF
2
Test sample
Mark ICP = 6.5 A ICP = 8.5 A Test Sample
Standerd spec. tail side Typ storage side
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
@5V / 2A @5V / 10A 20 (min) 50 (max) 8 (min) 17 (max) 50.5 15.6 33.8 12.1 24.1 8.2
@5V / 17A @17A / 4.25A 4.8 (min) 8.3 (max) 3V (max) 8.2 0.4V 6.6 0.6V 4.6 2.9V
3
tstg, tf, dIB / dt, SW loss IB1 (end)
2.4 2
tstg (max) ·· 1.9 µs = ICP = 8.5 A
tstg (µs)
1.6 1.2 0.8 0.4
280 240 200
ICP = 8.5 A Best condition area
ICP = 6.5 A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
tf (ns)
ICP = 6.5 A Best condition area
160 120 80
· tf (max) = 140 ns ·
ICP = 6.5 A ICP = 8.5 A
40
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
dIB / dt (A/µs)
4.6 4.2 3.8 3.4 3.0
14 12
ICP = 6.5 A ICP = 8.5 A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
SW loss (W)
· SW loss (max) = 11 W ·
10 8 6
ICP = 6.5 A ICP = 8.5 A
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IB1 (end) (A)
10
11
4
,
Switching Data of 2SC5695
tstg (max) = (1/fH) x 0.2 tf (max) = (1/fH) x 0.01 + 50ns tstg (max) ·· 1.9µs = tf (max) ·· 140 ns = thermal resistance junction to case: Rth (j-c) = 0.625°C/W (2SC5695) case to fin (heat-sink): Rth (c-f) = 1°C/W (supposition) +) fin (heat-sink) to air: Rth (f-a) = 3.5°C/W (supposition) TOTAL (junction on ari): Rth (f-a) = 5.125°C/W SW Loss Capasitance (max) = Tj (max)/Rth (j-a) x 80% derating = 70/5.125 x 0.8 = 10.9 · SW loss Capasitance (max) = 11 W ·
Recomended values (rough calculation) tstg (max) tf (max)
Switching loss capacitance (max)
@Ta (max) = 40°C, Tj (max) = 110°C Recommended Tj (max) = 110°C 40°C Tj (max) = 70°C Recommended
12
Application Circuit Example of 2SC5695
IC HV-Tr R3 duty 50 % MOSFET Cy V CE R4 Damper diode C2 Vcc2 Others Vcc1 Vcc2 15 V 47 V (@ 32 kHz) 156 V (@ 100 kHz) Cy = 4500 pF Ly = 80 µH R1 = 200 R2 = 3 R3 = 1.85 R4 = 15 C1 = 200 pF C2 = 3.3 µF L = 10 mH Ly L
10 v 0v
C1 IB R1 R2 SBD
Vcc 1 Semiconductors devices MOSFET : 2SK2146 SBD : 3GWJ42C HV-Tr : 2SC5695 Damper diode : 5TUZ52
Operating waveform example (21-inch ultra-high-resolution monitor) fH = 32 kHz to 100 kHz monitor
X-axis Y-axis 500 ns / div IB : 1 A / div IC : 1 A / div VCE : 200 V / div 100 ns / div IB : 1 A / div IC : 1 A / div VCE : 10 V / div
IB: 0
@ fH = 32 kHz
Icp = 9 A = IB1 (end) · · 0.75 A dIB / dt ·= 3.5 A / µs ·
IC
IB: 0
IC
IB
IC: 0 VCE: 0
IB
IC: 0 VCE: 0
VCE
500 ns / div
VCE
100 ns / div
IB: 0
@ fH = 100 kHz
Icp = 8 A IB1 (end) ·= 1. 1 A · dIB / dt ·= 3.8 A / µs ·
IC
IB: 0
IC
IB
IC: 0 VCE: 0
IB
IC: 0 VCE: 0
VCE
500 ns / div
VCE
100 ns / div
11
13 Lead-Forming
TO-3P(H)IS
2-16E302A
(2.25) 10.2±0.6
(Unit : mm)
2-16E303A
7.0 ± 0.5 (8.5)
4.45 ± 0.5 9.4 ± 0.5
15.2±0.8
(2.75)
4.95 ± 0.5 5.45 2 5.45
5.45 2
5.45 4.0 8.0
4.0
(8)
1
3
1. Base 2. Collector 3. Emitter
1
3
1. Base 2. Collector 3. Emitter
2-16E305A
2-16E306A
1.8
13.0 ± 0.5
5.45
5.45
5.3 ± 0.5
5.45 1 3
5.45
5.6 ± 0.5
6.9 ± 0.5
2
1
3
1. Base 2. Collector 3. Emitter
2
1. Base 2. Collector 3. Emitter
2-16E307A
2-16E309A
6.5 ± 0.5
15.4 ± 0.5
1.25
5.45
5.45
5.45
5.45
5.3 ± 0.5
1 2 3
1. Base 2. Collector 3. Emitter
2
1. Base 2. Collector 3. Emitter
3
1
2-16E311A
6.5 ± 0.5
2-16E313A
3.3 ± 0.5 (11)
1.25
15.4 ± 0.5
6.55 min
4.95 ± 0.5
5.3 ± 0.5
(10.5)
5.45
5.45
5.45 2
5.45
9.4 ± 0.5
2
1
3
1. Base 2. Collector 3. Emitter
1
3
1. Base 2. Collector 3. Emitter
12
2.2
4.45 ± 0.5
15 ± 1
6.5 ± 0.5
7.0 ± 0.5
1.25
2.5
13
TO-3P(H)IS
2-16E314A
7.0 ± 0.5
(Unit : mm)
2-16E315A
35.4 ± 1.0
2.25
4.95 ± 0.5 5.45 2 5.45
4.45 ± 0.5 9.4 ± 0.5
5.45 1 3
4 ± 0.5 5.45
4 ± 0.5 8.0 ± 0.5
1
3
1. Base 2. Collector 3. Emitter
2
1. Base 2. Collector 3. Emitter
2-16E316A
10.35 ± 0.5 5.85 ± 0.5
0.82 ± 0.5 1.0.5 ± 0.5 5.45 5.45 4.0 ± 0.5 1 2 3 2.95 ± 0.5
1. Base 2. Collector 3. Emitter
+ 1.0 10.2 0.5
2.75
2.0
TO-3P(LH)
2-21F208A
3.0 6.5 ± 0.6
(Unit : mm)
2-21F218A
3.5 ± 0.5
17.0 ± 0.8
7.0 ± 0.8 18.5 ± 0.8
20.0 ± 0.6
4.0 ± 0.5
4.0 ± 0.5 8.0 ± 1.0
5.45 ± 0.15
5.45 ± 0.15
5.45 ± 0.6
5.45 ± 0.15
5.45 ± 0.15
2
2
1
3
1. Base 2. Collector (heat sink) 3. Emittor
1
3
1. Base 2. Collector (heat sink) 3. Emitter
13
14 Markings
Explanation of markings
Place of Manufacture Package type TOSHIBA ELECTRONICS MALAYSIA SDN. BHD (made in Malaysia) TO-3P(H)IS
(As of April 2001)
Toshiba horizontal-deflection output transistors are manufactured in Japan (at the Himeji Semiconductor Works) and in Malaysia (at Toshiba Electronics Malaysia Sdn. Bhd.). Toshiba Electronics Malaysia Sdn. Bhd. only manufactures TO-3P(H)IS products. Himeji Semiconductor Works (made in Japan) TO-3P(LH)
Marking Example
TOSHIBA C5411 2 1A
* *2 *
4
1
TOSHIBA 2SC5570 2 1A JAPAN
*1 *2 *4
*
3
*3 *5
Definition
", "TOSHIBA" *1: Manufacturer's marking: "T", " product number 2: Product number or abbreviated *3: Code: "1", "2", "3", "A", "B", "C" *4: Lot number: month and year of manufacture * Month of manufacture: January to December are denoted by the letters A to L respectively. Year of manufacture: last decimal digit of year of manufacture "1A", as shown on the above package, indicates manufacture in January 2001. 5: Country of origin Since TO-3P(LH) packages are only made in Japan, "JAPAN" is displayed.
*
15 Package Label
Sample label
P/N:
TYPE ADDC NOTE , Q TY
(As of April 2001)
PCS.
BARCORD
MADE IN JAPAN
14
16 Package Specifications
Package type Packing Type
(As of April 2001)
TO-3P(H)IS
Tolerance: ±0.7 Material: rigid vinyl chloride
TO-3P(LH)
Tolerance: ±0.7 Material: rigid vinyl chloride
100 per tray, 5 trays per carton
61 67.6 76
19 28
14 6
19 27 21
12.4
8
16
290
290
Label
Carton Dimensions (unit: mm)
85 305
Label
116
303
190
190
24
52 72.5
Tray Dimensions (unit: mm)
184
184
15
17
1
Product No.
List of Superseded, Final-Phase and Discontinued Products
(As of April 2001)
2SC Series
SuperDiscon- Maximum Ratings Final seded tinued Phase IC VCBO PC Products Products Products (V) (A) (W ) 1500 4 50 1500 5 50 1500 6 50 1500 7 50 1500 8 50 1400 6 80 1500 6 80 1400 7 80 1500 7 80 1400 8 80 1500 8 80 1400 7 50 1500 7 50 1400 8 50 1500 8 50 1400 12 200 1500 12 200 1400 16 200 1500 16 200 1400 20 200 1500 20 200 1500 10 50 1700 10 200 1500 10 50 1500 10 80 1700 8 200 1500 7 50 1500 8 50 1500 10 50 2000 8 200 1700 6 50 1500 7 50 1500 8 50 1500 6 50 1700 5 50 1700 6 50 1700 5 50 1500 6 50 1500 7 50 1500 12 50 1500 10 50 1500 20 200 1700 10 50 1700 20 200 1500 12 50 1500 8 50 1700 10 50 1500 15 180 1700 14 200 VCE(sat) (V) Package Type * Recommended Built-in damper @ IC @ IB (H)IS (BS) (LH) TO-3 Replacement and Remarks diode Max (A) (A) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 3 3 3 3 3 3 5 3 3 3
Notes:
2SC3715 2SC3716 2SC3884A 2SC3885A 2SC3886A 2SC3887 2SC3887A 2SC3888 2SC3888A 2SC3889 2SC3889A 2SC3892 2SC3892A 2SC3893 2SC3893A 2SC4288 2SC4288A 2SC4289 2SC4289A 2SC4290 2SC4290A 2SC4531 2SC4532 2SC4542 2SC4560 2SC4608 2SC4757 2SC4758 2SC4759 2SC4760 2SC4761 2SC4762 2SC4763 2SC4764 2SC4765 2SC4766 2SC4806 2SC4830 2SC4916 2SC5048 2SC5129 2SC5142 2SC5143 2SC5144 2SC5148 2SC5149 2SC5150 2SC5331 2SC5332
(
2.5 3 4 5 6 4 4 5 5 6 6 5 5 6 6 10 10 12 12 14 14 7 8 7 7 6 5 6 7 6 4.5 5 6 4 3.5 4.5 3.5 4 5 8 6 14 6 11 8 5 6 9 8
0.6 0.8 1 1.2 1.5 1 1 1.2 1.2 1.5 1.5 1.2 1.2 1.5 1.5 2.5 2.5 3 3 3.5 3.5 1.7 2 1.7 1.7 1.5 1.2 1.5 1.7 1.5 1.3 1 1.2 0.8 1 1.3 1 1 1 2 1.5 3.5 1.5 2.75 2 1.3 1.5 2.25 2
2SD2599; 2SD2599; 2SC5386; 2SC5386; 2SC5386; 2SC5386; 2SC5386; 2SC5386; 2SC5386; 2SC5386; 2SC5386; 2SC5339; 2SC5339; 2SC5280; 2SC5280; 2SC5421; 2SC5421; 2SC5589; 2SC5589; 2SC5589; 2SC5589; 2SC5280; 2SC5422; 2SC5404; 2SC5404; 2SC5422; 2SC5386; 2SC5386; 2SC5404; 2SC5612; 2SC5588; 2SC5280; 2SC5280; 2SC5339; 2SC5716; 2SC5716; 2SC5588; 2SC5386; 2SC5280; 2SC5387; 2SC5386; 2SC5589; 2SC5716; 2SC5590; 2SC5386; 2SC5339; 2SC5588; 2SC5421; 2SC5422;
2 1 2 2 2 2 2 2 2 5 5 1 1 1 1 5 5 2 2 2 2 3 2 1 5 2 2 1 1 2 2 1 3 2 2 2 2 2 1 1 1 1 3 1 2 1 2 2 2
5 5 5 5
*)
1 2 3 4 5 6
Electrical characteristics and packages are same. Electrical characteristics have are high grade. Electrical characteristics are low grade. Package (allowable power disspation) are high grade. Package (allowable power disspation) are low grade. Damper diode is built-in or not.
: 1st generation : 2nd generation (final-phase or discontinued products) : 3rd generation (old design superseded products) : 4th generation (new design)
16
17
2
2SD Series
Product No. SuperDiscon- Maximum Ratings Final seded tinued Phase IC PC VCBO Products Products Products (V) (A) (W) 900 6 50 1500 2.5 50 1500 3.5 50 1500 5 50 1500 6 50 1500 7 50 1500 2.5 50 1400 3.5 50 1500 5 50 1500 6 50 1400 10 50 1500 2.5 80 1500 3.5 80 1500 5 80 1500 6 80 1500 2.5 80 1500 3.5 80 1500 5 80 1500 6 80 1500 7 80 1500 2.5 40 1500 3.5 40 1500 5 50 1500 6 50 1500 7 50 1500 8 50 1500 2.5 40 1500 3.5 40 1500 5 50 1500 6 50 1500 3.5 40 5 1500 50 6 1500 50 6 1700 50 8 1500 50 10 1500 50 8 1700 200 7 1700 50 VCE(sat) (V) Package Type Built-in * Recommended damper @ I C @ IB ( ) Replacement H IS (BS) (LH) TO-3 diode Max (A) (A) and Remarks 2.5 0.25 2SC3657; 5 10 2 2SD2599; 6 0.6 8 3 2SD2599; 6 0.8 8 4 2SC5386; 2 0.8 5 5 2SC5386; 2 1 5 6 2SC5386; 2 1.2 5 2 2SD2599; 2 5 0.6 8 3 2SD2599; 5 0.8 8 2SD2499; 1 4 0.8 5 2SD2539; 1 5 1 5 2SC5404; 1 8 2 5 2SD2599; 2 5 2 0.6 8 2SD2599; 5 3 0.8 8 2SD2499; 1 4 0.8 5 2SD2539; 5 5 1 5 2SD2498; 5 2 0.6 8 2SD2498; 5 3 0.8 8 2SD2498; 5 4 0.8 5 2SC5386; 5 5 1 5 2SC5404; 5 6 1.2 5 2SD2498; 2 2 0.6 8 2SD2498; 2 3 0.8 8 2SD2498; 1 4 0.8 5 2SC5386; 1 5 1 5 2SC5404; 1 6 1.2 5 2SC5404; 1 8 2 5 2SD2599; 2 2 0.6 8 2SD2599; 1 3 0.8 8 2SD2499; 1 4 0.8 5 2SD2539; 1 5 1 5 2SD2599; 1 2.2 0.7 1 2SD2586; 1 3.5 0.8 5 2SD2539; 1 5 1 5 2SD2638; 1 5 1 5 2SC5280; 3 6 1.2 5 2SC5280; 3 7 1.4 5 2SD2553; 5 6 1.2 5 2SD2638; 1 6 1.2 5
2SD811 2SD818 2SD819 2SD820 2SD821 2SD822 2SD868 2SD869 2SD870 2SD871 2SD1279 2SD1425 2SD1426 2SD1427 2SD1428 2SD1429 2SD1430 2SD1431 2SD1432 2SD1433 2SD1543 2SD1544 2SD1545 2SD1546 2SD1547 2SD1548 2SD1553 2SD1554 2SD1555 2SD1556 2SD2089 2SD2095 2SD2125 2SD2253 2SD2348 2SD2349 2SD2428 2SD2454
3
S2000 / S2055 Series
Product No. Final SuperDiscon- Maximum Ratings Phase seded tinued PC IC VCBO Products Products Products (V) (A) (W) 80 5 1500 80 5 1500 50 5 1500 50 5 1500 80 5 1500 80 5 1400 50 5 1500 50 5 1500 VCE(sat) (V) Package Type * Built-in Recommended damper Replacement @ I C @ IB ( ) Max ( ) H IS (BS) (LH) TO-3 and Remarks diode (A) A 5 1 1 5 5 1 1 5
Notes:
S2000 S2000A S2000AF S2000F S2055 S2055A S2055AF S2055F
(
4.5 4.5 4.5 4.5 4.5 4.5 4.5 4.5
2 2 2 2 2 2 2 2
S2000N; S2000N; S2000N; S2000N; S2055N; S2055N; S2055N; S2055N;
2 5 5 1 2 2 5 5 1 2
*)
1 2 3 4 5 6
Electrical characteristics and packages are same. Electrical characteristics have are high grade. Electrical characteristics are low grade. Package (allowable power disspation) are high grade. Package (allowable power disspation) are low grade. Damper diode is built-in or not.
: 1st generation : 2nd generation (final-phase or discontinued products) : 3rd generation (old design) : 4th generation (new design)
17
18
Package PC max **IC(sat)
2A 2.2 A 2.5 A 3A
Table of Replacement
VCBO = $900V, *1400V,1500 V
TO-3P(H)IS 40 W to 75 W Built-in damper diode
2SD1553 2SD2089 2SC3715 2SC3716 2SD1554 2SD2599 2SD2095 2SD2586 2SC4764 2SD1555 2SD2499 S2055AF S2055F S2055N 2SC4762 2SC4916 2SC5149 2SC5339 2SD1556 2SD2125 2SD2539 2SC4763 2SC5280 2SD2348 2SD2559
(8V) (1V) (5V) (5V) (8V) (8V) (5V) (5V) (5V) (5V) (5V) (1V) (5V) (5V) (5V) (5V) (5V) (5V) (5V) (5V) (5V) (5V) (5V) (5V) (5V)
18
VCBO = 1700 V
TO-3P(BS) 80 W Built-in damper diode
2SD1425
(8V)
VCBO = 2000 V
TO-3P(LH) 180 W to 220 W No built-in damper diode TO-3P(LH) 180 W to 220 W Built-in damper diode No built-in damper diode
TO-3 50 W Built-in damper diode
2SD868
(8V)
TO-3P(LH) 180 W to 220 W No built-in damper diode
TO-3P(H)IS 40 W to 75 W Built-in dampe dioder No built-in damper diode
Package PC max **IC(sat)
2A 2.2 A 2.5 A 3A
No built-in damper diode
2SD1543
(8V)
No built-in damper diode
2SD818 $2SD811 2SD819
(8V) (10V) (8V)
No built-in damper diode
2SD1429
(8V)
2SD1544
(8V)
2SD869
(8V)
2SD1426
(8V)
2SD1430
(8V)
2SD2550
(5V)
3.5 A 4A
2SC4765 2SC3844A 2SC4830 2SD1545 2SD2498 S2000AF S2000F S2000N 2SC3885A 2SC4757 2SC5148 2SD1546
(5V) (5V) (5V) (5V) (1V) (5V) (5V) (5V) (5V) (3V) (5V)
(5V) (5V)
2SC4806
(5V)
3.5 A 4A
2SD870
(5V)
2SD820
(5V)
2SD1427
(5V)
*2SC3887 2SC3887A 2SD1431 S2000 S2000A *2SC3888 2SC3888A 2SD1432
(5V) (5V) (5V) (5V) (1V) (5V) (5V) (5V)
2SD2551
4.5 A
S2055 S2055A 2SD871
(5V)
(5V) (1V) (5V) (5V) (5V)
2SC4766
(5V)
2SC4761
(5V)
4.5 A
5A
2SD821
(5V)
*2SC3892 2SC3892A 2SD1429
2SD2253
(5V)
5A
5.5 A 6A
7A
2SC4531 2SC2349
(5V) (5V)
8A
2SC3886A 2SC4758 2SC5129 2SC5386 2SD1547 2SD2500 2SC4542 2SC4759 2SC5404 2SD1548 2SC5048 2SC5387
(5V) (5V) (3V) (3V) (5V) (3V) (5V) (5V) (3V) (5V) (3V) (3V)
2SD822
(5V)
*2SC3893 2SC3893A
(5V) (5V)
*2SC3889 2SC3889A 2SD1433
(5V) (5V) (5V)
2SD2638 2SC5143 2SC5716 2SD2428 2SD2454 2SD2553
(5V) (3V) (5V) (5V) (5V) (5V)
2SC5150
(3V)
2SC4608
(5V)
2SC4760
(5V)
5.5 A 6A
2SC4560
(5V)
7A
*2SD1279
(5V)
2SC4532
(5V)
2SC5332
(3V)
8A
9A 10 A 11 A 12 A 14 A
2SC5587
(3V)
2SC5411 *(S3D20)
(3V)
2SC5331 *2SC4288 2SC4288A 2SC5421 *2SC4289 2SC4289A *2SC4290 2SC4290A 2SC5142 2SC5589 2SC5445 2SC5695
9A 10 A
(5V) (5V) (3V)
2SC5422 2SC5588
(3V)
(3V) (3V) *(2SC5749) (3V)
11 A
*(2SC5748)
2SC5590 2SC5446
12 A 14 A
(5V) (5V) (5V) (5V) (3V) (3V) (3V) (3V)
15 A 17 A 22 A
Notes:
2SC5717
(3V)
2SC5612 2SC5570 *(S3D21)
(3V)
(3V)
15 A 17 A 22 A
18
**: IC (sat) is value of IC for VCE (sat). : Superseded, final-phase or discontinued products : 3rd generation (old design) : 4th generation (new design)
(5V) means VCE (sat) = 5 V : 5th generation (new design) *( ) : 5th generation (new design under development)
19
OVERSEAS SUBSIDIARIES AND AFFILIATES
Toshiba America Electronic Components, Inc.
Headquarters-Irvine, CA
9775 Toledo Way, Irvine, CA 92618, U.S.A. Tel: (949)455-2000 Fax: (949)859-3963
010124 (D)
Toshiba Electronics Europe GmbH
Düsseldorf Head Office
Hansaallee 181, D-40549 Düsseldorf Germany Tel: (0211)5296-0 Fax: (0211)5296-400
Toshiba Electronics Asia, Ltd.
Hong Kong Head Office
Level 11, Top Glory Insurance Building, Grand Century Place, No.193, Prince Edward Road West, Mong Kok, Kowloon, Hong Kong Tel: 2375-6111 Fax: 2375-0969
Boulder, CO
3100 Arapahoe Avenue, Ste. 500, Boulder, CO 80303, U.S.A. Tel: (303)442-3801 Fax: (303)442-7216
München Office
Büro München Hofmannstrasse 52, D-81378, München, Germany Tel: (089)748595-0 Fax: (089)748595-42
Beijing Office
Rm 714, Beijing Fortune Building, No.5 Dong San Huan Bei-Lu, Chao Yang District, Beijing, 100004, China Tel: (010)6590-8795 Fax: (010)6590-8791
Boynton Beach, FL(Orlando)
11924 W. Forest Hill Blvd., Ste. 22-337, Boynton Beach, FL 33414, U.S.A. Tel: (561)374-6193 Fax: (561)374-6194
Toshiba Electronics France SARL
Immeuble Robert Schumann 3 Rue de Rome, F-93561, Rosny-Sous-Bois, Cedex, France Tel: (1)48-12-48-12 Fax: (1)48-94-51-15
Chengdu Office
Unit F, 18th Floor, New Times Plaza, 42 Wenwu Road, Xinhua Avenue, Chengdu, 610017, China Tel: (028)675-1773 Fax: (028)675-1065
Toshiba Electronics Italiana S.R.L.
Centro Direzionale Colleoni Palazzo Perseo Ingr. 2-Piano 6, Via Paracelso n.12, 1-20041 Agrate Brianza Milan, Italy Tel: (039)68701 Fax:(039)6870205
Deerfield, IL(Chicago)
One Pkwy., North, Suite 500, Deerfield, IL 60015-2547, U.S.A. Tel: (847)945-1500 Fax: (847)945-1044
Shenzhen Office
Rm 3010-3012, Office Tower Shun Hing Square, Di Wang Commercial Centre, 333 ShenNan East Road, Shenzhen, 518008, China Tel: (0755)246-1582 Fax: (0755)246-1581
Duluth, GA(Atlanta)
3700 Crestwood Parkway, Ste. 460, Duluth, GA 30096, U.S.A. Tel: (770)931-3363 Fax: (770)931-7602
Toshiba Electronics Espańa, S.A.
Parque Empresarial San Fernando Edificio Europa, a 1 Planta, ES-28831 Madrid, Spain Tel: (91)660-6700 Fax:(91)660-6799
Toshiba Electronics Korea Corporation
Seoul Head Office
14/F, KEC B/D, 257-7 Yangjae-Dong, Seocho-ku, Seoul, Korea Tel: (02)589-4334 Fax: (02)589-4302
Edison, NJ
2035 Lincoln Hwy. Ste. #3000, Edison NJ 08817, U.S.A. Tel: (732)248-8070 Fax: (732)248-8030
Toshiba Electronics(UK) Limited
Riverside Way, Camberley Surrey, GU15 3YA, U.K. Tel: (01276)69-4600 Fax: (01276)69-4800
Orange County, CA
2 Venture Plaza, #500 Irvine, CA 92618, U.S.A. Tel: (949)453-0224 Fax: (949)453-0125
Toshiba Electronics Scandinavia AB
Gustavslundsvägen 12, 2nd Floor S-161 15 Bromma, Sweden Tel: (08)704-0900 Fax: (08)80-8459
Gumi Office
6/F, Ssangyong Investment Securities B/D, 56 Songjung-Dong, Gumi City Kyeongbuk, Korea Tel: (82)54-456-7613 Fax: (82)54-456-7617
Portland, OR
1700 NW 167th Place, #240, Beaverton, OR 97006, U.S.A. Tel: (503)629-0818 Fax: (503)629-0827
Toshiba Electronics Asia (Singapore) Pte. Ltd.
Singapore Head Office
438B Alexandra Road, #06-08/12 Alexandra Technopark, Singapore 119968 Tel: (278)5252 Fax: (271)5155
Raleigh, NC
5511 Capitol Center Dr., #114, Raleigh, NC 27606, U.S.A. Tel: (919)859-2800 Fax: (919)859-2898
Toshiba Technology Development (Shanghai) Co., Ltd.
23F, Shanghai Senmao International Building, 101 Yin Cheng East Road, Pudong New Area, Shanghai, 200120, China Tel: (021)6841-0666 Fax: (021)6841-5002
Richardson, TX(Dallas)
777 East Campbell Rd., Suite 650, Richardson, TX 75081, U.S.A. Tel: (972)480-0470 Fax: (972)235-4114
Bangkok Office
135 Moo 5 Bangkadi Industrial Park, Tivanon Rd., Bangkadi Amphur Muang Pathumthani, Bangkok, 12000, Thailand Tel: (02)501-1635 Fax: (02)501-1638
Tsurong Xiamen Xiangyu Trading Co., Ltd.
8N, Xiamen SEZ Bonded Goods Market Building, Xiamen, Fujian, 361006, China Tel: (0592)562-3798 Fax: (0592)562-3799
San Jose Engineering Center, CA
1060 Rincon Circle, San Jose, CA 95131, U.S.A. Tel: (408)526-2400 Fax:(408)526-2410
Toshiba Electronics Trading (Malaysia)Sdn. Bhd.
Kuala Lumpur Head Office
Suite W1203, Wisma Consplant, No.2, Jalan SS 16/4, Subang Jaya, 47500 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: (3)731-6311 Fax: (3)731-6307
Wakefield, MA(Boston)
401 Edgewater Place, Suite #360, Wakefield, MA 01880-6229, U.S.A. Tel: (781)224-0074 Fax: (781)224-1095
Toshiba Electronics Taiwan Corporation
Taipei Head Office
17F, Union Enterprise Plaza Bldg. 109 Min Sheng East Rd., Section 3, 0446 Taipei, Taiwan Tel: (02)514-9988 Fax: (02)514-7892
Penang Office
Toshiba Do Brasil S.A.
Electronic Components Div.
Estrada Dos Alvarengas, 5. 500-Bairro Alvarenga 09850-550-Sao Bernardo do campo - SP Tel: (011)7689-7171 Fax: (011)7689-7189
Suite 13-1, 13th Floor, Menard Penang Garden, 42-A, Jalan Sultan Ahmad Shah, 100 50 Penang, Malaysia Tel: 4-226-8523 Fax: 4-226-8515
Kaohsiung Office
16F-A, Chung-Cheng Bldg., Chung-Cheng 3Rd., 80027, Kaohsiung, Taiwan Tel: (07)222-0826 Fax: (07)223-0046
Toshiba Electronics Philippines, Inc.
26th Floor, Citibank Tower, Valero Street, Makati, Manila, Philippines Tel: (02)750-5510 Fax: (02)750-5511
The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of Toshiba products listed in this document shall be made at the customer's own risk.
Electronic Devices Sales & Marketing Division
1-1, Shibaura 1-chome, Minato-ku, Tokyo, 105-8001, Japan Tel: +81-3-3457-3405 Fax: +81-3-5444-9431
Website: http://doc.semicon.toshiba.co.jp/indexus.htm
©2001 TOSHIBA CORPORATION Printed in Japan