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2SC4907
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4907 600 500 10 6(Pulse12) 2 30(Tc=25°C) 150 ­55 to +150 Unit V V V A A W °C °C

Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5

sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=10V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=­0.5A VCB=10V, f=1MHz 1max 100max 500min 10to30 0.5max 1.3max 8typ 45typ

(Ta=25°C) 2SC4907 Unit mA V V V MHz pF

16.9±0.3

8.4±0.2

µA

13.0min

1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2

sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 100 IC (A) 2 VBB1 (V) 10 VBB2 (V) ­5 IB1 (A) 0.2 IB2 (A) ­0.4 ton (µs) 1max tstg (µs) 4.5max tf (µs) 0.5max

2.54

3.9 B C E

I C ­ V CE Characteristics (Typical)
6
1A

V CE (sat),V BE (sat) ­ I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 2 (I C /I B =5)

I C ­ V BE Temperature Characteristics (Typical)
6 (V CE =4V)

80 0m A

5 Collector Current I C (A)

600m A

5 Collector Current I C (A)

4

400m A

4

300m A
3
200mA

V B E (sat) 1
p) ­55°C (Case Tem Temp) 25°C (Case Temp) (Case 125°C
ase

3
mp

±0.2

0.8±0.2

a b

ø3.3±0.2

Weight : Approx 2.0g a. Type No. b. Lot No.

emp se T

2

se

(Ca

(Ca 25°C

p)

V C E (sat) 0 0.02 0.05 0.1

(C 125°C

­5



C

0

0

1

2

3

4

0.5

1

5

0

0

0.2

0.4

125

1

Te

m

1

0.6

0.8

­55°C

°C

(Cas

I B =100mA

25°C

2

e Te

Te

mp)

)

)

1.0

1.2

1.4

Collector-Emitter Voltage V C E (V)

Collector Current I C (A)

Base-Emittor Voltage V B E (V)

(V C E =4V) 50 DC C urrent G ain h FE

j - a ( ° C/W)

h FE ­ I C Characteristics (Typical)
t o n· t s t g· t f (µ s)
7 5

t on ·t stg · t f ­ I C Characteristics (Typical)

j-a ­ t Characteristics
4

125°C

25°C

V C C 200V I C :I B1 :I B 2 =10:1:­2 1 0.5

t s tg

Sw it ching Time

­55°C

Transient Thermal Resistance

1

10

t on

0.5 0.3

tf 0.1 0.2 0.5 1 5 6

5 0.02

0.05

0.1

0.5

1

5 6

1

10 Time t(ms)

100

1000

Collector Current I C (A)

Collector Current I C (A)

Safe Operating Area (Single Pulse)
20 10 5 Collect or Cur re nt I C (A)
10 0µ

Reverse Bias Safe Operating Area
20 10 5 30

P c ­ T a Derating

s

M aximum Power Dissipa ti on P C ( W)

W ith

Collect or Cur ren t I C (A)

20

In fin ite he at si

1

1 Without Heatsink Natural Cooling L=3mH IB2=­0.5A Duty:less than 1%

nk

0.5

Without Heatsink Natural Cooling

0.5

10

Without Heatsink 2 0.1 10 50 100 500 1000 0.1 10 50 100 500 1000 0 0 25 50 75 100 125 150

Collector-Emitter Voltage V C E (V)

Collector-Emitter Voltage V C E (V)

Ambient Temperature Ta(°C)

120