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IRFP460
Data Sheet January 2002
20A, 500V, 0.270 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17465.
Features
· 20A, 500V · rDS(ON) = 0.270 · Single Pulse Avalanche Energy Rated · SOA is Power Dissipation Limited · Nanosecond Switching Speeds · Linear Transfer Characteristics · High Input Impedance · Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
Ordering Information
PART NUMBER IRFP460 PACKAGE TO-247 BRAND IRFP460
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE
DRAIN (TAB)
©2002 Fairchild Semiconductor Corporation
IRFP460 Rev. B
IRFP460
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified IRFP460 500 500 20 12 80 ±20 250 2.0 960 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to TJ = 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured from the Drain Lead, 6mm (0.25in) from Package to Center of Die Measured from the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device Inductances
D LD G LS S
TEST CONDITIONS ID = 250µA, VGS = 0V (Figure 10) VGS = VDS, ID = 250µA VDS = Rated BVDSS , VGS = 0V VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX , VGS = 10V VGS = ±20V ID = 11A, VGS = 10V (Figures 8, 9) VDS 50V, IDS > 11A (Figure 12) VDD = 250V, ID = 21A, RGS = 4.3 , RD = 12 , VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature
MIN 500 2 20 13 -
TYP 0.24 19 23 81 85 65 120 18 62 4100 480 84 5.0
MAX 4 25 250 ±100 0.27 35 120 130 98 190 -
UNITS V V µA µA A nA S ns ns ns ns nC nC nC pF pF pF nH
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate-Drain) Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
VGS = 10V, ID = 21A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA (Figure 14). Gate Charge is Essentially Independent of OperatingTemperature
-
VDS = 25V, VGS = 0V, f = 1MHz (Figure 10)
-
Internal Source Inductance
LS
-
13
-
nH
Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
RJC RJA Free Air Operation
-
-
0.50 30
oC/W oC/W
©2002 Fairchild Semiconductor Corporation
IRFP460 Rev. B
IRFP460
Source to Drain Diode Specifications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier
G D
MIN -
TYP -
MAX 20 80
UNITS A A
S
Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:
VSD trr QRR
TJ = 25oC, ISD = 21A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 21A, dISD/dt = 100A/µs TJ = 25oC, ISD = 21A, dISD/dt = 100A/µs
280 3.8
580 8.1
1.8 1200 18
V ns µC
2. Pulse test: pulse width 300µs, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 4.3mH, RGS = 25, Peak IAS = 20A.
Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0
Unless Otherwise Specified
20
0.8 0.6 0.4 0.2 0
ID, DRAIN CURRENT (A)
16
12
8
4
0 0 50 100 150 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
1 ZJC, THERMAL IMPEDANCE (oC/W)
0.5 0.1 0.2 0.1 0.05 0.01 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-4 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (S) 1 10 t1 t2 PDM
0.02 10-2
10-3 10-5
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2002 Fairchild Semiconductor Corporation
IRFP460 Rev. B
IRFP460 Typical Performance Curves
103 5 ID , DRAIN CURRENT (A) 2 102 5 2 10 5 2 1 5 T = 25oC C TJ = MAX RATED 2 SINGLE PULSE 0.1 1 2 5 10
Unless Otherwise Specified (Continued)
40 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 10µs 100µs 1ms 10ms DC 0 VGS = 10V VGS = 6.0V 32 VGS = 5.5V 24 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
16
VGS = 5.0V
8
VGS = 4.5V VGS = 4.0V
2
5
102
2
5
103
0
50
100
150
200
250
VDS , DRAIN TO SOURCE VOLTAGE (V)
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
40 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX ID , DRAIN CURRENT (A) 32 VGS = 10V VGS = 6.0V ID, DRAIN CURRENT(A) VGS = 5.5V 24
102 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS 50V 10 TJ = 150oC 1 TJ = 25oC 0.1
16
VGS = 5.0V
8
VGS = 4.5V VGS = 4.0V
0 0 4 8 12 16 20 VDS , DRAIN TO SOURCE VOLTAGE (V)
10-2 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
2.5
NORMALIZED DRAIN TO SOURCE ON RESISTANCE
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
3.0
rDS(ON), DRAIN TO SOURCE ON RESISTANCE ()
2.0 VGS = 10V
2.4
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 11A
1.5
1.8
1.0
1.2
0.5
0.6
VGS = 20V
0
0 0 20 40 60 ID, DRAIN CURRENT (A) 80 100
-40
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
IRFP460 Rev. B
IRFP460 Typical Performance Curves
1.25 ID = 250µA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.15 8000 CISS 6000 COSS 4000
Unless Otherwise Specified (Continued)
10000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD
1.05
0.95
0.85
C, CAPACITANCE (pF)
2000
CRSS
0.75
-40
0
40
80
120
160
0
TJ , JUNCTION TEMPERATURE (oC)
1
2
5 10 2 5 VDS , DRAIN TO SOURCE VOLTAGE (V)
102
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
40 gfs, TRANSCONDUCTANCE (S)
32
ISD, SOURCE TO DRAIN CURRENT (A)
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS 50V TJ = 25oC
102
PULSE DURATION = 80µs 5 DUTY CYCLE = 0.5% MAX 2
10 5 2 1 5 2 0.1 0 0.4 0.8 1.2 1.6 2.0 TJ = 150oC TJ = 25oC
24
16 TJ = 150oC 8
0
0
8
16 24 ID , DRAIN CURRENT (A)
32
40
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 21A VDS = 400V VDS = 250V VDS = 100V
VGS, GATE TO SOURCE (V)
16
12
8
4
0
0
40
80
120
160
200
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2002 Fairchild Semiconductor Corporation
IRFP460 Rev. B
IRFP460 Test Circuits and Waveforms
VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD
+
-
0V
IAS 0.01
0 tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON td(ON) tr RL VDS
+
tOFF td(OFF) tf 90%
90%
RG DUT
-
VDD 0
10% 90%
10%
VGS VGS 0 10%
50% PULSE WIDTH
50%
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
VDS (ISOLATED SUPPLY)
VDD Qg(TOT) VGS
12V BATTERY
0.2µF
50k 0.3µF
SAME TYPE AS DUT Qgs
Qgd
D G DUT 0
VDS
IG(REF) 0 IG CURRENT SAMPLING RESISTOR
S VDS ID CURRENT SAMPLING RESISTOR
IG(REF) 0
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
©2002 Fairchild Semiconductor Corporation
IRFP460 Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST ® FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench ® QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER ®
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET ®
VCXTM
STAR*POWER is used under license
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Rev. H4
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