Text preview for : RJP01 _1.9GHz_WCDMA_PA_.pdf part of Rficsolutions Inc. RJP01 The RJP01 is 1.920 to 1.980 GHz high efficiency WCDMA Power Amplifier. The Amplifier is designed using 0.18 um SiGe BiCMOS technology. Power amplifier shows PAE of 41% at 28 dBm with off-chip output matching. It has been designed specially for use in WCDMA application. It operates from 3.2 V to 4.2 V power supply.



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RFIC Solutions Inc.
WCDMA Power Amplifier Description .

Preliminary Datasheet RJP01

Functional Diagram

.

The RJP01 is 1.920 to 1.980 GHz high efficiency WCDMA Power Amplifier. The Amplifier is designed using 0.18 um SiGe BiCMOS technology. Power amplifier shows PAE of 41% at 28 dBm with off-chip output matching. It has been designed specially for use in WCDMA application. It operates from 3.2 V to 4.2 V power supply. Applications. · WCDMA Handsets . . Key Features. · Linear Gain · High PAE · High Pout .

Electrical Specifications.

Conditions: Vcc = 3.5 V, Vref = 2.85 V & TA=25 0C

Parameter
Operating Freq Gain

Symbol
Fo Ghi Gmi Glo 1920 - 1980 28.5 18.5 18.5 41 27.2 15.2 Iref ACLR1 ACLR2 ACLR1 ACLR2 2Ho 3Ho VSWR R www.rficsolutions.com 6.4 -35.8 -59 38.4 64 -70 -34 1.5:1 10:1

Unit
MHz dB dB dB % % % mA dBc dBc dBc dBc dBc dBc

Power Added Efficiency @ 28dBm P1dB PAE at Linear Pout of 26dBm PAE at Medium Power Mode Reference Current Adjacent Channel Rejection
High Power Mode @26dBm Linear Pout

PAE

Adjacent Channel Rejection
Low Power Mode @16dBm Pout

Harmonics(2nd) (3rd ) Input VSWR Ruggedness

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RFIC Solutions Inc.
WCDMA Power Amplifier Simulated results. High Power Mode
Gain Vs Frequency 30 Gain(dB)
Gain(dB) 30 m2 28 26 24 22

Preliminary Datasheet RJP01

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Gain Vs Input Power
m3

29 28 27 26 1.90

1.92

1.94

1.96

1.98

2.00

20 -15

m2 Pin=-15.000 Gain=28.648 RF=1.950000E9

m3 Pin=0.400 Gain=27.610 RF=1.950000E9

-10

-5

0

5

10

Frequency(GHz)

Input Power(dBm)

Plot for Power Output Output Power(dBm) 30 25 20 15 10 -15
m1 Pin=0.400 Pout=28.010 RF=1.950000E9
m1

O u tp u t P o w e r a n d P A E (% ) 60 50 40 30 20 10 0

-10

-5

0

5

10

-1 6 -1 4 -1 2 -1 0 -8

-6

-4

-2

0

2

4

6

8

10

Input Power(dBm)

In p u t P o w e r (d B m )

Medium Power Mode
Gain Vs Frequency 20 19 Gain(dB) 18 17 16 15 1.90 1.92 1.94 1.96 1.98 2.00

19 m2 18 17 16

Gain Vs Input Power

m3

Gain(dB)

15 -15

m2 Pin=-15.000 Gain=18.691 RF=1.950000E9

m3 Pin=0.200 Gain=17.668 RF=1.950000E9

-10

-5

0

5

10

Frequency(GHz)

Input Power(dBm)

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RFIC Solutions Inc.
WCDMA Power Amplifier
Plot for Power Output Output Power(dBm) 30 25 20 15 10 5 0 -15 -10 -5 0
m1 Pin=0.200 Pout=17.868 RF=1.950000E9
m1

Preliminary Datasheet RJP01
O u tp u t P o w e r a n d P A E (% )

50 40 30 20 10

5

10

0 -1 6 -1 4 -1 2 -1 0 -8 -6 -4 -2 0 2 4 6 8 10 In p u t P o w e r (d B m )

Input Power(dBm)

Low Voltage Medium Power Mode
Plot for Power Output Output Power(dBm) 20 15 10 5 0 -16 -14 -12 -10 -8 -6 -4
m1 Pin= -0.600 Pout=16.934 RF=1.950000E9 m1

Gain Vs Input Power 19.0 18.5 Gain(dB) 18.0 17.5 17.0 16.5
4
m2 Pin=-15.000 Gain=18.582 RF=1.950000E9 m3 Pin=-0.600 Gain=17.534 RF=1.950000E9 m3 m2

-2

0

2

16.0 -16 -14 -12 -10 -8

-6

-4

-2

0

2

4

Input Power(dBm)

Input Power(dBm)

O u tp u t P o w e r a n d P A E (% ) 50 40 30 20 10 0 -1 6 -1 4 -1 2 -1 0 -8 -6 -4 -2 0 2 4 6 8 10 In p u t P o w e r (d B m )

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RFIC Solutions Inc.
WCDMA Power Amplifier
Return Losses -10 -12 dB(S(2,2)) dB(S(1,1)) -14 -16 -18 -20 1.90 1.92 1.94 1.96 1.98 2.00

Preliminary Datasheet RJP01
Reverse Isolation

-30 -35 S12(dB) -40 -45 -50 -55 -60 1.90 1.92 1.94 1.96 1.98 2.00

Frequency(GHz)

Frequency(GHz)

Stability over Input Power 6 5 K

Stability Factor 20 16 K 11 6 1

4 3 2 1 -20 -15 -10 -5 0 5 10 Input Power (dBm)

0

2

4

6

8

10

Frequency(GHz)

Layout

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