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DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D088
PMBT5401 PNP high-voltage transistor
Product specification Supersedes data of 1999 Apr 15 2004 Jan 21
Philips Semiconductors
Product specification
PNP high-voltage transistor
FEATURES · Low current (max. 300 mA) · High voltage (max. 150 V). APPLICATIONS · Switching and amplification in high voltage applications such as telephony. DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: PMBT5550. MARKING TYPE NUMBER PMBT5401 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. ORDERING INFORMATION TYPE NUMBER PMBT5401 PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) *2L
Top view
handbook, halfpage
PMBT5401
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1 2 1 2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
VERSION SOT23
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. -160 -150 -5 -300 -600 -100 250 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C
2004 Jan 21
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Philips Semiconductors
Product specification
PNP high-voltage transistor
THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain CONDITIONS IE = 0; VCB = -120 V IE = 0; VCB = -120 V; Tamb = 150 °C IC = 0; VEB = -4 V VCE = -5 V; (see Fig.2) IC = -1 mA IC = -10 mA IC = -50 mA VCEsat VBEsat Cc fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency noise figure IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -5 mA IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -5 mA IE =Ie = 0; VCB = -10 V; f = 1 MHz IC = -10 mA; VCE = -10 V; f = 100 MHz; Tamb = 25 °C IC = -200 µA; VCE = -5 V; RS = 2 k; f = 10 Hz to 15.7 kHz; Tamb = 25 °C 50 60 50 - - - - - 100 - - - - MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1
PMBT5401
VALUE 500
UNIT K/W
MAX. -50 -50 -50 - 240 - -200 -500 -1 -1 6 300 8
UNIT nA µA nA
mV mV V V pF MHz dB
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Philips Semiconductors
Product specification
PNP high-voltage transistor
PMBT5401
handbook, full pagewidth
200
MGD813
hFE
150
VCE = -5 V 100
50
0 -10-1
-1
-10
-102 IC mA
-103
Fig.2 DC current gain; typical values.
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Philips Semiconductors
Product specification
PNP high-voltage transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PMBT5401
SOT23
D
B
E
A
X
HE
v M A
3
Q A A1
1
e1 e bp
2
w M B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
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Philips Semiconductors
Product specification
PNP high-voltage transistor
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
PMBT5401
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
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Philips Semiconductors a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected].
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/04/pp7
Date of release: 2004
Jan 21
Document order number:
9397 750 12502