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2003-9
PRODUCT GUIDE
BCE0015A
Horizontal-Deflection Output Transistors
2003
http://www.semicon.toshiba.co.jp/eng
1 Outline
Toshiba has developed a range of fifth-generation horizontal-deflection-output transistors (HV-Trs). Radical redesign of the emitter electrode and the contact pattern has yielded significant improvements, resulting in higher current density and superior electrical characteristics compared to those of fourth-generation products. Toshiba's propriety glassmesa structure results in a high breakdown capability. Thanks to Toshiba's wealth of experience and the wide variety of products which the company can offer, Toshiba horizontal-deflection-output transistors are used worldwide in color TVs and video display monitors.
2 Appearance, Package and Weight
The photographs below show the products and their markings. The packages shown are is the througu-hole packages used for standard products.
Appearance
TO-3P(H)IS 2SC5411 2SC5570 TO-3P(LH)
5.5g ( typ. )
9.75g ( typ. )
Package dimensions
TO-3P(H)IS
15.5 ± 0.5 4.5 3.6 ± 0.3 10° 10.0 3.0 ± 0.3 10°
(Unit: mm)
TO-3P(LH)
20.5 max 3.3 ± 0.2
6.0
22.0 ± 0.5
26.5 ± 0.5
2.0
1.5
2.3 max 0.95 max
2.5 3.0 + 0.3 1.0 0.25
5.45 + 0.25 0.9 0.1
5.45 5.5 ± 0.3
5.45 ± 0.15
5.45 ± 0.15
+ 0.25 0.6 0.10
2.8
5.2 max
1.5
20.0 ± 0.6
2.5
16.4 min
1
2
3
2
2.0
1. Base 2. Collector 3. Emitter
1
2
3
1. Base 2. Collector (heat sink) 3. Emitter
3.3
2.0
4.0
5° 5°
5°
2.50
2.0
1.5
11.0
26.0 ± 0.5
1.2
23.0
4.0
3 Device Trends
Market trends and the development of horizontal-deflection output transistors
Device Trends
Market requirements
TV, Widescreen TVs HDTVs / Projectors Multimedia TVs Digital TVs
resolution · Improved in screen525p, 1125 i,quality Screen resolution: 750p Progressive system is improved Starting grand wave digital broadcasting Various appllications such as DVDs and Cable TVs Various screen size Flat screen Low loss
Video display monitors
· Widescreen (4 : 3) > (16 : 9) aspect ratio: · Large screen size Flat screen · · Low loss · Lower prices
· High horizontal frequency 21 inches fH = 120 kHz > 135 kHz · Large screen size inches > 17 inches Standard size: 15 · Low pricepart count Reduced · Low loss · Flat screen
(driving circuit and resonating capacitor are fixed)
· · ·
Development of Horizontal-Deflection Output Transistors
Emitter contact shape and chip size optimization
· Enhancement of 1700 V product line · Low price due to reduction in chip size
· Development of 2000-V products · Development of products incorporating diodes for use in digital TVs · Shorter trr Reduced saturation voltage ·V CE(sat) = 3 V (max) devices housed in · High-current packages TO-3P(H)IS · Reduced variation in product characteristics
21-A products available
Reduced switching loss to · high-frequency operation(ttf parts) due(max) f = 150 ns · Reduced saturation voltage at high currents VCE(sat) = 3 V (max) devices housed in · High-current packages TO-3P(H)IS allowable · Increased IS 65 Wpower dissipation TO-3P(H) > 75 W 21-A products available TO-3P(LH)
· Reduced variation in product characteristics
200 W > 220 W
Fourth generation of horizontaldeflection output transistors
Fifth generation of horizontal-deflection output transistors
4 Features of Fourth and Fifth Generation
1
High breakdown capability
Toshiba's proprietary "glass mesa" structure
Glass passivation
Contact shape Conventional comb type
The product features a glass mesa structure, the use of which yields a wide forward- and reverse-biased safe operating area.
Emitter
N+ P
Base
2
Low saturation voltage
N N+
VCE(sat) = 3 V (max) Note: Used for 2SC Series devices without damper diodes.
Collector
B
E
3
Wider range of optimum drive conditions
Fluctuation in optimum drive conditions due to variation in device quality has been minimized for ease of design.
Fourth and fifth-generation mesh type
4
Revised emitter contact shape and optimized chip size
Chip design has been optimized using Toshiba simulation technology. The emitter's contact area has been widened by changing the contact shape below the emitter electrode from comb type to the new mesh type. As a result, the saturation voltage (V CE(sat)) and fall time (tf) have both been reduced, thus reducing switching loss.
B
E
3
5 Comparison of Product Characteristic Curve, Features and Emitter-Contact Design
Generation
Design
Emitter contact shape
Typical Products and Waveforms
TVs Video displays
·Main application
· Features
@fH, ICP, IB1(end), VCP @15.75kHz, 5A, 1A, 1200V @100kHz, 8A, 1A, 1200V ( t, IC, VCE) / div ( 200ns, 1A, 10v) / div
2SD1556 (1500 V / 6A)
( 50ns, 1A, 10v) / div
First Generation
Comb type I
·TVs
· High-voltage 1500 V · Improved R-SOA · Improved switching speeds fH(max) = 32 kHz · Development of TO-3P(H)IS Package
IC
B
E
VCE
OA, OV
tstg Loss
tf Loss
Second Generation
STRIPE type
2SD2253 (1700 V / 6A)
2SC4290A (1500 V / 20A)
IC
·TVs
· High-current devices products · Improved switching speeds fH(max) = 64 kHz · Development of TO-3P(LH) Package
IC
·Video displays
B
E
OA, OV
VCE
tstg Loss
OA, OV
VCE
tf Loss tstg Loss tf Loss
Third Generation
Comb type II
2SD2553 (1700 V / 8A)
2SC5142 (1500 V / 20A)
IC
·TVs
·Video displays
· Improvements over first-generation products · Improvements over second-generation products · Improved switching speeds fH(max) = 80 kHz
IC
B
E
VCE
OA, OV
VCE
OA, OV
tstg Loss
tf Loss
tstg Loss
tf Loss
Fourth Generation
··TVs Improvements over first- and ·Digital TVs
third-generation products
Mesh type I or Crystal-mesh type
2SD2638 (1700 V / 7A)
2SC5445 (1500 V / 20A)
IC
·Video displays
· Development of new 2000-V products · Improvements over third-generation products · Improved switching speeds fH(max) = 130 kHz
IC
VCE
VCE
OA, OV
B
Mesh type II
E
OA, OV tstg Loss
tf Loss
tstg Loss tf Loss
Fifth Generation
2SC5695 (1500 V / 22A)
IC
·Digital TVs
·Video displays
· Enhanced 2000-V product line · Improved speeds for products incorporating damper diodes · Improvements over fourth-generation products · Reduced loss · Improvement in drivability
VCE
B
E
OA, OV
tstg Loss tf Loss
4
6 New Products
2SC Series
Part Number VCBO (v) 1500 1700 1500 2000 1500 1500 1700 1700 1700 1700 2000 1500 1500 2000 Maximum Ratings IC PC (A) (W) 22 200 8 55 21 75 16 210 10 50 14 55 21 75 22 200 23 210 (16) 75 (14) 75 (18) 60 (10) 50 (10) 60 Package** LH H H LH H H H LH LH H H H H H Di *** Main Target Use 21 inch, 130 kHz 28 inch, 32 kHz to~ 19 inch, 120 kHz 36 inch, 32 kHz to~ 17 inch, 69 kHz 19 inch, 92 kHz 36 inch, 45 kHz 36 inch, 45 kHz 36 inch, 32 kHz to~ 36 inch, 45 kHz to~ 36 inch, 45 kHz to~ 19 inch, 110 kHz 32 inch, 45 kHz 32 inch, 45 kHz Remarks Equivalent to 2SC5445 High-current version of 2SC5143 2SC5717 and 2SC5695 use same chip. 2000 V series Equivalent to 2SC5387 Equivalent to 2SC5411 High-current version of 2SC5588 2SC5857 and 2SC5858 use same chip. High-current version of 2SC5446 High-current version of 2SC5716 2000 V series High-current version of 2SC5856 High-current version of 2SC5280 2000 V series and built-in damper diode
2SC5695 2SC5716 2SC5717 2SC5748 2SC5855 2SC5856 2SC5857 2SC5858 2SC5859 * S3G18 * 2SC5997 * S3G90 * S3H58 * S3H60
2SD Series
2SD2638 1700 7 50 H 28 inch - 15.75 kHz Low-current version of 2SD2553
Note *: Under development and tentative specification ***Di: Built-in damper diode Package**: H....TO-3P(H)IS. LH...TO-3P(LH)
7 Cross Reference
< How to use this table > Step 1. Check **Ic(sat) of other devices. Step 2. Check VCBO, package and built-in damper diode or not built-in damper diode. Step 3. Look for applicable area as step 1 & 2. Step 4. Recommended devises near to that area.
VCBO = 1500 V Package PC max ** IC(sat) 3A 3.5 A 4A 4.5 A 5A 5.5 A 6A 7A 8A 11 A 12 A 14 A 15 A 17 A 18 A 22 A Note. 2SC 2SC 2SC5587 * S3G90 2SC5589 2SC5445 2SC5695 2SC5280 2SD2559 2SC5386 2SD2500 2SC5404 2SC5387 2SC5855 2SC5411 2SC5856 TO-3P(H)IS 40 to 75 W Built-in damper 2SD2599 2SD2586 2SD2499 S2055N 2SD2539 2SC5339 Not built-in damper TO-3P(LH) 180 to 220 W Not built-in damper
VCBO = 1700 V TO-3P(H)IS 40 to 75 W Built-in damper 2SD2550 Not built-in damper TO-3P(LH) 180 to 220 W Not built-in damper
VCBO = 2000 V TO-3P(H)IS 40 to 75W Built-in damper Not built-in damper TO-3P(LH) 180 to 220 W Not built-in damper
2SD2498 S2000N
2SD2551
2SD2638 2SC5716 2SD2553
* S3H58
* S3H60
2SC5421 2SC5422
* 2SC5997 2SC5748
* S3G18
2SC5588
2SC5590 2SC5446
2SC5717
2SC5857
2SC5858 2SC5859 2SC5570
2SC5612
: 3rd Generation (old design) : 4th Generation (new design) : 5th Generation (new design)
* : Under development and tentative specification ** : IC(sat) is value of IC condition for VCE(sat).
2SC
5
8 Characteristics List
1 2SC Series
Maximum Ratings Part Number 2SC5280 2SC5339 2SC5386 2SC5387 2SC5404 2SC5411 2SC5421 2SC5422 2SC5445 2SC5446 2SC5570 2SC5587 2SC5588 2SC5589 2SC5590 2SC5612 2SC5695 2SC5716 2SC5717 2SC5748 2SC5855 2SC5856 2SC5857 2SC5858 2SC5859 * S3G18 *2SC5997 * S3G90 * S3H58 * S3H60 VCBO (V) 1500 1500 1500 1500 1500 1500 1500 1700 1500 1700 1700 1500 1700 1500 1700 2000 1500 1700 1500 2000 1500 1500 1700 1700 1700 1700 2000 1500 1500 2000 IC (A) 8 7 8 10 9 14 15 15 20 18 28 17 15 18 16 22 22 8 21 16 10 14 21 22 23 (16) (14) (18) (10) (10) PC (W) 50 50 50 50 50 60 180 200 200 200 220 75 75 200 200 220 200 55 75 210 50 55 75 200 210 75 75 60 50 60 ** pack -age H H H H H H LH LH LH LH LH H H LH LH LH LH H H LH H H H LH LH H H H H H *** Di
hFE
Min (-) 4 4 4.3 4.3 4 4 4 4.5 4.5 4 4.5 5 4.8 5 4.8 4.8 4.5 3.8 4.5 4.8 4.3 4.5 5 5 4.5 (4) (5) (5) (4.5) (4.5) Max (-) 8.5 8 7.5 7.8 8 8 8 8.5 8.5 8 7.5 8 8 8 8 9 8.5 9 8.5 7.5 6.7 7.8 7.5 7.5 8 (8) (7.2) (8) (7.5) (7.5) @5 V / IC (A) 6 5 6 8 7 11 11 11 15 14 22 14 12 14 12 17 17 6 17 12 8 11 17 17 18 (12) (11) (14) (8) (8)
VCE(sat) Max(V) @IC(sat) (A) 5 5 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 5 3 3 3 3 1.5 1.5 3 (3) (1.5) (3) (3) (3) 6 5 6 8 7 11 11 11 15 14 22 14 12 14 12 17 17 6 17 12 8 11 17 17 18 (12) (11) (14) (8) (8) @ IB (A) 1.5 1.25 1.5 2 1.75 2.75 2.75 2.75 3.75 3.5 5.5 3.5 3 3.5 3 4.25 3.75 1.5 3.75 3 2 2.75 4.25 4.25 4.5 (3) (2.75) (3.5) (2) (2)
Switching Time (Typ.)
tstg
(us) 4 4 2.5 2.5 2.5 2.5 2.5 2.5 2 2.1 1.4 1.8 1.8 1.8 1.8 4 1.6 3.5 1.6 4 2.3 1.8 3.5 3.5 1.8 (3.5) (5) (1.8) (3.5) (3.5)
tf
(us) 0.2 0.2 0.15 0.15 0.15 0.15 0.15 0.15 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.15 0.1 0.2 0.1 0.15 0.1 0.1 0.1 0.1 0.1 (0.1) (0.12) (0.1) (0.2) (0.2)
@ fH (kHz) 31.5 31.5 64 64 64 64 64 64 100 100 130 100 100 100 100 32 100 32 100 32 80 100 45 45 100 (45) (32) (100) (45) (45)
@ ICP (A) 6 5 5 6 5.5 8.5 8.5 8 8 7 8 7.5 6.5 7.5 6.5 8 8 5.5 8 8 5.5 6.5 8 8 7.5 (8) (6) (7.5) (6) (6)
Generation 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 5th 4th 5th 5th 5th 5th 5th 5th 5th 5th 5th 5th 5th 5th
2 2SD Series
Maximum Ratings Part Number 2SD2498 2SD2499 2SD2500 2SD2539 2SD2550 2SD2551 2SD2553 2SD2559 2SD2586 2SD2599 2SD2638 VCBO (V) 1500 1500 1500 1500 1700 1700 1700 1500 1500 1500 1700 IC (A) 6 6 10 7 4 5 8 8 5 3.5 7 PC (W) 50 50 50 50 50 50 50 50 50 40 50
Built-in ** pack damper -age diode :
hFE
Min (-) 5 5 4 5 8 5 5 5 4.4 8 4.5 Max (-) 9 9 8 9 22 10 9 9 8.5 25 7.5 @5 V / IC (A) 4 4 6 5 1 4 6 6 3.5 0.5 5.5 5 5 3 5 8 5 5 5 5 8 5
VCE(sat) Max(V) @IC(sat) (A) 4 4 6 5 3 4 6 6 3.5 3 5.5 @ IB (A) 0.8 0.8 1.5 1 0.8 0.8 1.2 1.2 0.8 0.8 1.2
Switching Time (Typ.)
tstg
(us) 7 7.5 8 6 7.5 7.5 9 6 7.5 7.5 7
tf
(us) 0.4 0.3 0.35 0.3 0.3 0.5 0.3 0.4 0.3 0.5 0.4
@ fH (kHz) 15.75 15.75 15.75 15.75 15.75 15.75 15.75 15.75 15.75 15.75 15.75
@ ICP (A) 4 4 6 5 3 4 6 6 3.5 3 5.5
Generation 3rd 3rd 3rd 3rd 3rd 3rd 3rd 4th 4th 4th 4th
H H H H H H H H H H H
3 S2000 / 2055 Series
Maximum Ratings Part Number S2000N S2055N VCBO (V) 1500 1500 IC (A) 8 8 PC (W) 50 50
Built-in ** pack damper -age diode :
hFE
Min (-) 4.5 4.5 Max (-) 9 9 @5 V / IC (A) 4.5 4.5 5 5
VCE(sat) Max(V) @IC(sat) (A) 4.5 4.5 @ IB (A) 1 1
Switching Time (Typ.)
tstg
(us) 8 7.5
tf
(us) 0.4 0.3
@ fH (kHz) 15.75 15.75
@ ICP (A) 4.5 4.5
Generation 3rd 3rd
H H
*: Under development & tentative spec.
**:H ;TO-3P(H)IS
LH ; TO-3P(LH)
6
9 Selection Tables for Video Displays (Reference only)
qVideo Display Monitor Horizontal-Deflection-Output Transistors (VCBO = 1500 V series)
Intended Uses for Horizontal-Deflection-Output Transistors (Note 2) Screen size & maximum horizontal frequency 15 inch ICP = 4.5 A: q v ICP = 5.0 A: q v 54 kHz v q v q q q q q q q q q q q q q q q q q q q q 2SC5280 2SC5404 2SC5855 2SC5387 2SC5411 2SC5856 q q q q q q 2SC5421 q q q q q q 2SC5587 * S3G90 2SC5589 2SC5445 69 kHz 17 inch ICP = 5.5 A: q ICP = 6.0 A: q 69 kHz 82 kHz 96 kHz 19 inch ICP = 6.5 A: q ICP = 7.0 A: q 21 inch ICP = 7.5 A: q ICP = 8.0 A: q Package / Recommended Altemative Product (for reference) TO-3P(H)IS Damper diode Not Built-in 2SC5386 TO-3P(LH) Damper diode Built-in Not Built-in 7 8 8 9 10 10 14 14 15 17 18 18 20 21 22 Maximum Ratings IC (A) PC (W)
(Note 3) (Note 1)
Design Generation
fH@(max)
82 96 107 120 96 107 120 135 kHz kHz kHz kHz kHz kHz kHz kHz Built-in 2SC5339
q
2SC5717
q
2SC5695
50 50 50 50 50 50 60 55 180 75 60 200 200 75 200
4th 4th 4th 4th 5th 4th 4th 5th 4th 4th 5th 4th 4th 5th 5th
qVideo Display Monitor Horizontal-Deflection-Output Transistors (VCBO = 1700 V series)
v q q q q q q q q q 2SC5716 2SC5588 q q q 2SC5590 2SC5446 8 15 16 18 21 22 23 28 50 75 200 200 75 200 210 220 4th 4th 4th 4th 5th 5th 5th 4th
2SC5857
q q q q q
2SC5858 2SC5859 2SC5570
Note 1: 4th and 5th generation devices are new products. Note 2: The screen size and frequency quoted for intended use and reference only. Note 3: Tc = 25°C
* : Under development and specifucations are tentative. v v: Need to additional damper diode
7
9 Selection Tables for Color TVs
qColor TV Horizontal-Deflection-Output Transistors (VCBO = 1500 V Series)
Intended Uses for Horizontal-Deflection-Output Transistors (Note 2) Flat and wide-screen & Projector TVs HDTV & Digital TVs
525i (480i) fH = 15.75 kHz D1pin Screen size (Main inches) 525p (480p) fH = 31.5 kHz D2 pin Screen size (Main inches) 1125i (1080i) 750p (720p) fH = 33.75 kHz fH = 45k Hz to D3 pin D4 pin Screen size Screen size (Main inches) (Main inches)
(Reference only)
Package / Recommended Altemative Product (for reference) TO-3P(H)IS Damper diode Built-in 2SD2599 2SD2586 Not Built-in TO-3P(LH) Damper diode Built-in Not Built-in
Maximum Ratings IC (A) PC (W)
(Note 3) (Note 1)
Design Generation
16 20 24 28 32 36 36 to 20 24 28 32 36 28 32 36 28 32 36 q q q q q
q q q q q q
2SD2498 q q q 2SD2499 2SD2539 2SC5339 2SD2559 S2000N S2055N q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q q 2SC5386 2SC5280 2SC5404
q q
q q
* S3H58
2SD2500 2SC5855 2SC5856 * S3G90 2SC5587
2SC5717
3.5 5 6 6 7 7 8 8 8 8 8 9 10 10 10 14 17 18 2SC5589 18 2SC5445 20 21 2SC5695 22
40 50 50 50 50 50 50 50 50 50 50 50 50 50 50 55 60 75 200 200 75 200
4th 4th 3rd 3rd 3rd 4th 4th 3rd 3rd 4th 4th 4th 5th 3rd 5th 5th 5th 4th 4th 4th 5th 5th
qColor TV Horizontal-Deflection-Output Transistors (VCBO = 1700 V Series)
q q q q q q q q q q q q q q q q q 2SD2550 2SD2551 2SD2638 2SD2553 2SC5716 q q q q q q q q q q q q q q q q q 2SC5588 4 5 7 8 8 15 16 16 21 22 23 28 50 50 50 50 50 75 75 200 75 200 210 220 3th 3th 4th 3th 4th 4th 5th 4th 5th 5th 5th 4th
q q q q q
q
*S3G18
2SC5590
*2SC5857 *2SC5858 2SC5859 2SC5570
qColor TV Horizontal-Deflection-Output Transistors (VCBO=2000V Series)
q q q q q q q q q q q q q q q
*S3H60 *2SC5997
10 14 2SC5748 18 2SC5612 22
50 75 210 220
5th 5th 5th 4th
Note 1: 4th and 5th generation devices are new products. * : Under development and specifucations are tentative. Note 2: The screen size and frequency quoted for intended use and reference only. Note 3: Tc=25°C Note 4: Scan type is showed by the number of vertical pixels and scan mode. e.g.525i means 525 vertical pixels and interlace scan. 720p means 720 vertical pixels and progressive scan.
8
10 Basic Circuit Structure and Operating Waveform of Horizontal-Deflection Output
Measurement conditions
fH = 69 kHz (duty 50%) ICP = 5 A VCP = 1200 V
Main operations
Cy Damper diode operation operation
ts
HV-Tr operation
tr
HV-Tr operation Cy Damper diode operation operation
Operating waveform example Basic circuit structure
0V IC Drive Circuit IB VCE(HV-Tr) VF(Damper diode) SBD VBE IE dIB/dt = HV-Tr Damper diode VCC IB1(end) + IB2 tstg tstg IB2 0.9 x ICP IF Cy ICy Ly ILy VBE
0A
IB IB1(end)
Measurement range
X-axis
t (time) 2 µs / div
0A IC
ICP 0.1 x ICP tf
Y-axis
VBE (Base-emitter voltage) IB (Base current ) IC (Collector current ) IE (Reverse emitter current ) IF (Forward current ) VCE (Collector-emitter voltage) ILY (Deflection coil current ) ICY (Resonance capacitor current ) 5 V / div 2 A / div 2 A / div 2 A / div 2 A / div 200 V / div 2 A / div 2 A / div
ICy 0A 0A IE IF (Damper diode)
Enlarged wave forms of IB and IC
0A
IB
0A
IB1(end)
0A ILy
tstg
IB2
tr =
ts Ly Cy
tr
0.9 x ICP ICP IC
0A
VCP
0.1 x ICP tf
0V VCE (HV-Tr) VF (Damper-diode)
2µs / div
9
11 Switching Data for monitor applications (5tn design)
2SC5695
1
Test condition · @ TC = 25°C · fH = 105 kHz (duty 50%, continuous opration) · ICP = 6.5 A VCP = 953 V (Vcc2 ·= 107 V) · ·· ICP = 8.5 A VCP = 1220 V (Vcc2 ·= 140 V) · · Test sample
Mark ICP = 6.5 A ICP = 8.5 A Test Sample
Standerd specs. tail side Typ storage side
(Reference only)
· dIB / dt = 4.0 A/µs (VCC1 = 24 V) · Ly = 63 µH, Cy = 4000 pF
2
hFE (1)
@5 V / 2 A 20 (min) 50 (max) 50.5 33.8 24.1
hFE (2)
@5 V / 10 A 8 (min) 17 (max) 15.6 12.1 8.2
hFE (3)
@5 V / 17 A 4.8 (min) 8.3 (max) 8.2 6.6 4.6
VCE (sat)
@17 A / 4.25 A 3 V (max) 0.4 V 0.6 V 2.9 V
3
tstg, tf, dIB / dt, Switching Loss IB1 (end)
2.4 2
tstg (max) ·· 1.9 µs = ICP = 8.5 A
tstg (µs)
1.6 1.2 0.8 0.4
280 240 200
ICP = 8.5 A Best condition area
ICP = 6.5 A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
tf (ns)
ICP = 6.5 A Best condition area
160 120 80
· tf (max) = 140 ns ·
ICP = 6.5 A ICP = 8.5 A
40
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
dIB / dt (A/µs)
4.6 4.2 3.8 3.4 3.0
14
ICP = 6.5 A ICP = 8.5 A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Switching Loss (W)
12 10 8 6
· SW loss (max) = 11 W ·
ICP = 8.5 A
ICP = 6.5 A
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IB1 (end) (A)
10
4
Recomended values (rough calculation) tstg (max) tf (max)
tstg (max) = (1/fH) x 0.2 tf (max) = (1/fH) x 0.01 + 50ns tstg (max) ·· 1.9µs = tf (max) ·· 140 ns = thermal resistance junction to case: Rth (j-c) = 0.625°C/W (2SC5695) case to fin (heat-sink): Rth (c-f) = 1°C/W (supposition) +) fin (heat-sink) to air: Rth (f-a) = 3.5°C/W (supposition) TOTAL (junction on ari): Rth (f-a) = 5.125°C/W SW Loss Capasitance (max) = Tj (max)/Rth (j-a) x 80% derating = 70/5.125 x 0.8 = 10.9 · SW loss capasitance (max) =·11 W
Switching loss capacitance (max)
, @Ta (max) = 40°C, Tj (max) = 110°C recommended Tj (max) = 110°C 40°C Tj (max) = 70°C recommended
12 Application Circuit Example
IC HV-Tr R3 duty 50 % 10 v 0v MOSFET C1 IB R1 R2 SBD Vcc 1 Semiconductors devices MOSFET : 2SK2146 SBD : 3GWJ42C HV-Tr : 2SC5695 Damper diode : 5TUZ52 R4 V CE Cy Damper diode C2 Vcc2 Others Vcc1 Vcc2 15 V 47 V (@ 32 kHz) 156 V (@ 100 kHz) Cy = 4500 pF Ly = 80 µH R1 = 200 R2 = 3 R3 = 1.85 R4 = 15 C1 = 200 pF C2 = 3.3 µF L = 10 mH Ly L
Operating waveform example (21-inch ultra-high-resolution monitor) fH = 32 kHz to 100 kHz monitor
X-axis Y-axis 500 ns / div IB : 1 A / div IC : 1 A / div VCE : 200 V / div 100 ns / div IB : 1 A / div IC : 1 A / div VCE : 10 V / div
IB: 0
@ fH = 32 kHz
Icp = 9 A IB1 (end) ·= 0.75 A · dIB / dt ·= 3.5 A / µs ·
IC
IB: 0
IC
IB
IC: 0 VCE: 0
IB
IC: 0 VCE: 0
VCE
500 ns / div
VCE
100 ns / div
IB: 0
@ fH = 100 kHz
Icp = 8 A IB1 (end) ·= 1. 1 A · dIB / dt ·= 3.8 A / µs ·
IC
IB: 0
IC
IB
IC: 0 VCE: 0
IB
IC: 0 VCE: 0
VCE
500 ns / div
VCE
100 ns / div
11
13 Switching Data for HDTV and PJTV Applications (4th design)
2SC5446 [1700 V / 18 A / 3P(LH)]
Test condition · @ TC = 100°C · fH = 35 kHz (duty 50%, 3 cycles opration) · · ICP = 9 A VCP = 1350 V (Vcc2 = 157 V) · · hFE minimum side Sample IB1(end) = 1.2 / 1.4 / 1.6 A (VBB = 24.4 / 28.4 / 32.4 V) Ly = 208 µH, Cy = 12000 pF
Sample Data
Test Conditions
2SC5446 specifications Sample data
hFE (1)
@5 V / 2 A 10 (min) 40 (max) 17.5
hFE (2)
@5 V / 9 A 6 (min) 13 (max) 6.7
hFE (3)
@5 V / 14 A 4 (min) 8 (max) 4.4
VCE (sat)
@14 A / 3.5 A - 3 V (max) 3.3 V
tstg, tf, Switching Loss tstg Loss dIB / dt
tstg (µs)
tstg (max) · 6.0 µs = ·
tf (max) · 350 ns = ·
tf (ns)
IB1(end) = 1.6 A
Drive ability
IB1(end) = 1.4 A IB1(end) = 1.2 A
Best Drive
}
Loss (max) · 9W = ·
Switching Loss (W)
Best Drive conditions @IB1(end) -dIB/dt =
dIB/dt (A/µs) Switching Loss ·· 6.5W = 7.5W by hFE minimum side sample
12
(Reference only)
Mark
IB1(end)
1.2 A 1.4A 1.6 A
hFE maximum side Sample
Sample Data
Test Conditions
2SC5446 specifications Sample data
hFE (1)
@5 V / 2 A 10 (min) 40 (max) 28.6
hFE (2)
@5 V / 9 A 6 (min) 13 (max) 11.7
hFE (3)
@5 V / 14 A 4 (min) 8 (max) 7.5
VCE (sat)
@14 A / 3.5 A - 3 V (max) 0.4 V
tstg, tf, Switching Loss, tstg Loss dIB / dt
tstg (µs)
tstg (max) · 6.0 µs = ·
tf (max) · 350 ns = ·
{
are =1.6A, 1.6A/µs
Drive ability
tf (ns)
IB1(end) = 1.6 A IB1(end) = 1.4 A IB1(end) = 1.2 A
Best Drive
Switching Loss (W)
Loss (max) · 9W = ·
dIB/dt (A/µs) Switching Loss ·· 5W = by hFE maximum side sample
13
13 Switching Data for HDTV and PJTV Applications (5th design)
2SC5857 [1700 V / 21 A / 3P(H)IS] 2SC5858 [1700 V / 22 A / 3P(LH)]
Test condition · @ TC = 100°C · fH = 35 kHz (duty 50%, 3 cycles opration) · · ICP = 9 A VCP = 1350 V (Vcc2 = 157 V) · · hFE minimum side Sample IB1(end) = 1.2 / 1.4 / 1.6 A (VBB = 24.4 / 28.4 / 32.4 V) Ly = 208 µH, Cy = 12000 pF
Sample Data
Test Conditions
2SC5857/5858 specifications Sample data
hFE (1)
@5 V / 2 A 30 (min) 60 (max) 38.2
hFE (2)
@5 V / 8 A 11 (min) 19 (max) 12.0
hFE (3)
@5 V / 17 A 5 (min) 7.5 (max) 5.2
VCE (sat)
@17 A / 4.25 A - 1.5 V (max) 1.3 V
tstg, tf, Switching Loss, tstg Loss dIB / dt
tstg (µs)
tstg (max) · 6.0 µs = ·
tf (max) · 350 ns = ·
tf (ns)
IB1(end) = 1.6 A
Drive ability
IB1(end) = 1.4 A IB1(end) = 1.2 A
Best Drive
}
Loss (max) · 9W = ·
Switching Loss (W)
Best Drive conditions @IB1(end) -dIB/dt =
dIB/dt (A/µs) Switching Loss ·· 6.5W = by hFE minimum side sample
14
(Reference only)
Mark
IB1(end)
1.2 A 1.4A 1.6 A
2SC5857 and 2SC5858 (5th design) have better switching loss and IB1(end) characteristics than 2SC5446 does.
hFE maximum side Sample
Sample Data
Test Conditions
2SC5857/5858 specifications Sample data
hFE (1)
@5 V / 2 A 30 (min) 60 (max) 53.6
hFE (2)
@5 V / 8 A 11 (min) 19 (max) 17.1
hFE (3)
@5 V / 11 A 5 (min) 7.5 (max) 7.0
VCE (sat)
@17 A / 4.25 A - 1.5 V (max) 0.5 V
tstg, tf, Switching Loss, tstg Loss dIB / dt
tstg (µs)
tstg (max) · 6.0 µs = ·
tf (max) · 350 ns = ·
{
are =1.4A, 1.6A/µs
Drive ability
tf (ns)
IB1(end) = 1.6 A IB1(end) = 1.4 A IB1(end) = 1.2 A
Best Drive
Switching Loss (W)
Loss (max) · 9W = ·
dIB/dt (A/µs) Switching Loss ·· 5.5W = by hFE maximum side sample
15
14 Lead Formed Through-hole Packages
TO-3P(H)IS
2-16E302A
(2.25) 10.2±0.6
(Unit : mm)
2-16E303A
7.0 ± 0.5 (8.5)
15.2±0.8
(2.75)
4.95 ± 0.5 5.45 2 5.45
(8)
5.45 2
5.45 4.0 8.0
4.0
9.4 ± 0.5
1
3
1. Base 2. Collector 3. Emitter
1
3
1. Base 2. Collector 3. Emitter
2-16E305A
2-16E306A
1.8
4.45 ± 0.5
13.0 ± 0.5
5.45
5.45
5.3 ± 0.5
5.45 1 3
5.45
5.6 ± 0.5
6.9 ± 0.5
2
1
3
1. Base 2. Collector 3. Emitter
2
1. Base 2. Collector 3. Emitter
2-16E307A
2-16E309A
6.5 ± 0.5
15.4 ± 0.5
1.25
5.45
5.45
5.45
5.45
5.3 ± 0.5
1 2 3
1. Base 2. Collector 3. Emitter
2
1. Base 2. Collector 3. Emitter
3
1
2-16E311A
6.5 ± 0.5
2-16E313A
3.3 ± 0.5 (11)
1.25
15.4 ± 0.5
6.55 min
4.95 ± 0.5 5.3 ± 0.5 5.45 2 5.45
(10.5)
5.45
5.45
9.4 ± 0.5
2
1
3
1. Base 2. Collector 3. Emitter
1
3
1. Base 2. Collector 3. Emitter
16
2.2
4.45 ± 0.5
15 ± 1
6.5 ± 0.5
7.0 ± 0.5
1.25
2.5
TO-3P(H)IS
2-16E314A
7.0 ± 0.5
(Unit : mm)
2-16E315A
35.4 ± 1.0
2.0
2.25
4.95 ± 0.5 5.45 2 5.45
4.45 ± 0.5 9.4 ± 0.5 5.45 1 3
4 ± 0.5 5.45
4 ± 0.5 8.0 ± 0.5
1
3
1. Base 2. Collector 3. Emitter
2
1. Base 2. Collector 3. Emitter
2-16E316A
10.35 ± 0.5 5.85 ± 0.5
0.82 ± 0.5 1.0.5 ± 0.5 5.45 5.45 4.0 ± 0.5 1 2 3 2.95 ± 0.5
1. Base 2. Collector 3. Emitter
+ 1.0 10.2 0.5
2.75
TO-3P(LH)
2-21F208A
3.0 6.5 ± 0.6
(Unit : mm)
2-21F218A
3.5 ± 0.5 17.0 ± 0.8 20.0 ± 0.6
7.0 ± 0.8 18.5 ± 0.8
5.45 ± 0.15
5.45 ± 0.15
5.45 ± 0.6
4.0 ± 0.5 5.45 ± 0.15 5.45 ± 0.15
4.0 ± 0.5 8.0 ± 1.0
2
2
1
3
1. Base 2. Collector (heat sink) 3. Emittor
1
3
1. Base 2. Collector (heat sink) 3. Emitter
17
15 Markings
Explanation of markings
(As of September 2003)
Toshiba horizontal-deflection output transistors are manufactured in Japan (at the Himeji Semiconductor Works) and in Malaysia (at Toshiba Electronics Malaysia Sdn. Bhd.). Toshiba Electronics Malaysia Sdn. Bhd. only manufactures TO-3P(H)IS products. TOSHIBA ELECTRONICS MALAYSIA SDN. BHD (made in Malaysia) TO-3P(H)IS Printing by white ink
Place of Manufacture Package type Marking Type
Himeji Semiconductor Works (made in Japan) TO-3P(LH) Carving by laser
Marking Example
TOSHIBA C5411 2 1A
* *2 *4
1
TOSHIBA 2SC5570 2 1A JAPAN
*1 *2 *4
*
3
* *5
3
Definition
" ", "TOSHIBA" *1: Manufacturer's marking: "T",Part number 2: Part number or abbreviated *3: Division code: "1", "2", "3", "A", "B", "C" etc. Usually, no marking. *4: Lot number: month and year of manufacture * Month of manufacture: January to December are denoted by the letters A to L respectively. Year of manufacture: last decimal digit of year of manufacture "1A", as shown on the above package, indicates manufacture in January 2001. 5: Country of origin Since TO-3P(LH) packages are only made in Japan, "JAPAN" is displayed.
*
16 Package Label
Sample label P/N:
TYPE ADDC NOTE , Q TY
(As of September 2003)
PCS.
BARCORD
MADE IN JAPAN
18
17 Package Specifications
Package type Packing Type
(As of September 2003)
TO-3P(H)IS
Tolerance: ±0.7 Material: rigid vinyl chloride
TO-3P(LH)
Tolerance: ±0.7 Material: rigid vinyl chloride
100 per tray, 5 trays per carton
61 67.6 76
19 28
14 6
12.4 16
19 27 21
290
290
Label Carton Dimensions (unit: mm)
Label
85
305
116
303
190
190
24
8
52 72.5
Tray Dimensions (unit: mm)
184
184
19
18 List of Superseded, Final-Pase and Discontinued Products
1 2SC Series SuperFinal Disconseded Phase tinued Products Products Products Maximum Ratings VCBO (V) 1500 1500 1500 1500 1500 1400 1500 1400 1500 1400 1500 1400 1500 1400 1500 1400 1500 1400 1500 1400 1500 1500 1700 1500 1500 1700 1500 1500 1500 2000 1700 1500 1500 1500 1700 1700 1700 1500 1500 1500 1500 1500 1700 1700 1500 1500 1700 1500 1700 Ic(A) (A) 4 5 6 7 8 6 6 7 7 8 8 7 7 8 8 12 12 16 16 20 20 10 10 10 10 8 7 8 10 8 6 7 8 6 5 6 5 6 7 12 10 20 10 20 12 8 10 15 14 Pc (W) 50 50 50 50 50 80 80 80 80 80 80 50 50 50 50 200 200 200 200 200 200 50 200 50 80 200 50 50 50 200 50 50 50 50 50 50 50 50 50 50 50 200 50 200 50 50 50 180 200 Notes: 2SC 2SC 2SC 2SC 2SC : : : : : Built-in damper diode VCE(sat) (V) MAX (V) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 3 3 3 3 3 5 5 3 3 3 @Ic(sat) (A) 2.5 3 4 5 6 4 4 5 5 6 6 5 5 6 6 10 10 12 12 14 14 7 8 7 7 6 5 6 7 6 4.5 5 6 4 3.5 4.5 3.5 4 5 8 6 14 6 11 5 5 6 9 8 @IB (A) 0.6 0.8 1 1.2 1.5 1 1 1.2 1.2 1.5 1.5 1.2 1.2 1.5 1.5 2.5 2.5 3 3 3.5 3.5 1.7 2 1.7 1.7 1.5 1.2 1.5 1.7 1.5 1.3 1 1.2 0.8 1 1.3 1 1 1 2 1.5 3.5 1.5 2.75 1.3 1.3 1.5 2.25 2 Part Number 2SC3715 2SC3716 2SC3884A 2SC3885A 2SC3886A 2SC3887 2SC3887A 2SC3888 2SC3888A 2SC3889 2SC3889A 2SC3892 2SC3892A 2SC3893 2SC3893A 2SC4288 2SC4288A 2SC4289 2SC4289A 2SC4290 2SC4290A 2SC4531 2SC4532 2SC4542 2SC4560 2SC4608 2SC4757 2SC4758 2SC4759 2SC4760 2SC4761 2SC4762 2SC4763 2SC4764 2SC4765 2SC4766 2SC4806 2SC4830 2SC4916 2SC5048 2SC5129 2SC5142 2SC5143 2SC5144 2SC5148 2SC5149 2SC5150 2SC5331 2SC5332
(As of September 2003)
Package Type (H)IS (BS) (LH) TO-3
# Recommended Replacement and Remarks 2SD2599:2 2SD2599:1
2SC5855: 2 2SC5855: 2 2SC5855: 2 2SC5855: 25 2SC5855: 25 2SC5855: 25 2SC5855: 25 2SC5855: 5 2SC5855:5
2SC5339:1 2SC5339:1 2SC5280:1 2SC5280:1 2SC5589:2 2SC5589:2 2SC5589:2 2SC5589:2 2SC5589:2 2SC5589:2 2SC5280:2
2SC5855: 25 2SC5855: 2 2SC5855: 25 2SC5855: 25 2SC5855: 2 2SC5855: 2 2SC5855: 2 2SC5748: 2
2SC5588:3 2SC5339:2 2SC5280:2 2SC5339:2 2SC5716:2 2SC5716:2 2SC5588:2
2SC5855: 2
2SC5339:1
2SC5855:1 2SC5855:2
2SC5589:1 2SC5716:3
2SC5858:1 2SC5855:2
2SC5339:1 2SC5588:2 2SC5421:2 2SC5590:2
# : Rrecommended replacement and remarks 1 Electrical characterristics and packages are same. 2 Electrical characterristics have are high grade. 3 Electrical characterristics are low grade. 4 Package (allowable power disspation) is high grade. 5 Package (allowable power disspation) is low grade. 6 Damper diode is built-in or not.
1st generation 2nd generation (final-phase or discontinued products.) 3rd generation (old design supersended products.) 4th generation (new design) 5th generation (the most new design)
20
1 2SD Series SuperFinal Disconseded Phase tinued Products Products Products Maximum Ratings VCBO (V) 900 1500 1500 1500 1500 1500 1500 1500 1500 1500 1400 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1700 1500 1500 1700 1700 Ic(A) (A) 6 2.5 3.5 5 6 7 2.5 3.5 5 6 10 2.5 3.5 5 6 2.5 3.5 5 6 7 2.5 3.5 5 6 7 8 2.5 3.5 5 6 3.5 5 6 6 8 10 8 7 Pc (W) 50 50 50 50 50 50 50 50 50 50 50 80 80 80 80 80 80 80 80 80 40 40 50 50 50 50 40 40 50 50 40 50 50 50 50 50 200 50 Built-in damper diode VCE(sat) (V) MAX (V) 10 8 8 5 5 5 8 8 5 5 5 8 8 5 5 8 8 5 5 5 8 8 5 5 5 5 8 8 5 5 1 5 5 5 5 5 5 5 @Ic(sat) (A) 2.5 2 3 4 5 6 2 3 4 5 8 2 3 4 5 2 3 4 5 6 2 3 4 5 6 8 2 3 4 5 2.2 3.5 5 5 6 7 6 6 @IB (A) 0.25 0.6 0.8 0.8 1 1.2 0.6 0.8 0.8 1 2 0.6 0.8 0.8 1 0.6 0.8 0.8 1 1.2 0.6 0.8 0.8 1 1.2 2 0.6 0.8 0.8 1 0.7 0.8 1 1 1.2 1.4 1.2 1.2 (H)IS Package Type (BS) (LH) TO-3 # Recommended Replacement and Remarks 2SC3657:5 2SD2599:56 2SD2599:56
Part Number 2SD811 2SD818 2SD819 2SD820 2SD821 2SD822 2SD868 2SD869 2SD870 2SD871 2SD1279 2SD1425 2SD1426 2SD1427 2SD1428 2SD1429 2SD1430 2SD1431 2SD1432 2SD1433 2SD1543 2SD1544 2SD1545 2SD1546 2SD1547 2SD1548 2SD1553 2SD1554 2SD1555 2SD1556 2SD2089 2SD2095 2SD2125 2SD2253 2SD2348 2SD2349 2SD2428 2SD2454
2SC5855: 2 2SC5855: 2 2SC5855: 2
2SD2599:25 2SD2599:5 2SD2499:1 2SD2539:1
2SC5855: 1
2SD2599:25 2SD2599:5 2SD2499:15 2SD2539:5
2SC5855: 25 2SC5855: 25 2SC5855: 25 2SC5855: 25 2SC5855: 25 2SC5855: 2 2SC5855: 2 2SC5855: 2 2SC5855: 2 2SC5855: 1 2SC5855: 2
2SD2599:2 2SD2599:1 2SD2499:2 2SD2539:1 2SD2599:1 2SD2586:1 2SD2539:1 2SD2638:1 2SD2559:3 2SD2559:3 2SD2553:5 2SC5716:1
1 S2000 / S2055 Series SuperFinal DisconPhase tinued Part Number seded Products Products Products S2000 S2000A S2000AF S2000F S2055 S2055A S2055AF S2055F Maximum Ratings VCBO (V) 1500 1500 1500 1500 1500 1500 1500 15000 Ic(A) (A) 5 5 5 5 5 5 5 5 Pc (W) 80 80 50 50 80 80 50 50 Notes: 2SC 2SC 2SC 2SC 2SC : : : : : 1st generation 2nd generation (final-phase or discontinued products.) 3rd generation (old design supersended products.) 4th generation (new design) 5th generation (the most new design) Built-in damper diode VCE(sat) (V) MAX (V) 5 1 1 5 5 1 1 5 @Ic(sat) (A) 4.5 4.5 4.5 4.5 4.5 4.5 4.5 4.5 @IB (A) 2 2 2 2 2 2 2 2 (H)IS Package Type (BS) (LH) TO-3 # Recommended Replacement and Remarks S2000N:25 S2000N:5 S2000N:1 S2000N:2 S2055N:25 S2055N:5 S2055N:1 S2055N:2
# : Rrecommended replacement and remarks 1 Electrical characterristics and packages are same. 2 Electrical characterristics have are high grade. 3 Electrical characterristics are low grade. 4 Package (allowable power disspation) is high grade. 5 Package (allowable power disspation) is low grade. 6 Damper diode is built-in or not.
21
from 19 Replacement TableDevice by Ic(sat) Old Device to New
Package Pc max ** Ic(sat) 2A 2.2 A 2.5 A 3A TO-3P(H)IS 40 W to 75 W Built-in damper diode Not built-in damper diode Built-in damper diode VCBO = 900 V, 1400 V, 1500 V TO-3 50 W Not built-in damper diode
(As of September 2003)
TO-3P(BS) 80 W Built-in damper diode Not built-in damper diode TO-3P(LH) 180 W - 220 W Not built-in damper diode
3.5 A 4A
2SC3715 (5 V) 2SD1553 (8 V) 2SD2089 (1 V) 2SC3715 (5 V) 2SC3716 (5 V) 2SD1554 (8 V) 2SD2599 (8 V) 2SD2095 (5V) 2SD2586 (5 V) 2SC4764 (5 V) 2SD1555 (5 V) 2SD2499 (5 V) S2055AF (1 V) S2055F (5 V) S2055N (5V) 2SC4762 (5 V) 2SC4916 (5 V) 2SC5149 (5 V) 2SC5339 (5 V) 2SD1556 (5 V) 2SD2125 (5 V) 2SD2539 (5 V) 2SC4763 (5 V) 2SC5280 (5 V) 2SD2348 (5 V) 2SD2559 (5 V)
2SD1543 (8 V)
2SD868 (8 V)
2SD818 (8 V)
2SD1425 (8 V)
2SD1429 (8 V)
2SD1544 (8 V)
2SD869 (8 V)
2SD811 (10 V) 2SD819 (8 V)
2SD1426 (8 V)
2SD1430 (8 V)
4.5 A
5A
2SC3884A (5 V) 2SC4830 (5 V) 2SD1545 (5 V) 2SD2498 (5 V) S2000AF (1 V) S2000F (5 V) S2000N (5 V) 2SC3885A (5 V) 2SC4757 (5 V) 2SC5148 (3 V) 2SD1546 (5 V)
2SD870 (5 V)
2SD820 (5 V)
2SD1427 (5 V)
2SC3887 (5 V) 2SC3887A (5 V) 2SD1431 (5 V) S2000 (5 V) S2000A (1 V) 2SC3888 (5 V) 2SC3888A (5 V) 2SD1432 (5 V)
S2055 (5 V) S2055A (1 V) 2SD871 (5 V) 2SD821 (5 V) 2SC3892 (5 V) 2SC3892A (5 V) 2SD1429 (5 V)
5.5 A 6A
7A
2SC4531 (5 V) 2SD2349 (5 V)
8A
* S3H58 (3 V)
2SC3886A (5 V) 2SC4758 (5 V) 2SC5129 (3 V) 2SC5386 (3 V) 2SD1547 (5 V) 2SD2500 (3 V) 2SC4542 (5 V) 2SC4759 (5 V) 2SC5404 (3 V) 2SD1548 (5 V) 2SC5048 (3 V) 2SC5387 (3 V) 2SC5855 (3 V)
2SD822 (5 V)
2SC3893 (5 V) 2SC3893A (5 V)
2SC3889 (5 V) 2SC3889A (5 V) 2SD1433 (5 V)
2SC4560 (5 V)
2SD1279 (5 V)
9A 10 A 11 A 12 A 14 A
2SC5331
2SC4288 (5 V)
2SC5411 (3 V) 2SC5856 (3 V)
2SC4288A (5 V) 2SC5421 (3 V)
2SC4289 (5 V) 2SC4289A (5 V) 2SC4290 (5 V) 2SC4290A (5 V) 2SC5142 (3 V) 2SC5589 (3 V) 2SC5445 (3 V) 2SC5695 (3 V)
2SC5587 (3 V) * S3G90 (3 V)
15 A 17 A 18 A 22 A
Note : 2SC : Superseded, final-phase or discontinued products. 2SC 2SC 2SC : 3rd generation (old design). : 4th generation : 5th generation ( the most new design)
2SC5717 (3 V)
* : Under development and tentative specs. ** : Ic(sat) is value of Ic for VCE(sat). (5 V) means VCE(sat) = 5 V
22
VCBO = 1700 V TO-3P(H)IS 40 W - 75 W Built-in damper diode Not built-in damper diode TO-3P(LH) 180 W - 220 W Not built-in damper diode
VCBO = 2000 V TO-3P(H)IS 40 W - 75 W Built-in damper diode Not built-in damper diode
TO-3P(LH) 180 W - 220 W Not built-in damper diode
Package Pc max ** Ic(sat) 2A 2.2 A 2.5 A
2SD2550 (5 V)
3A
2SC4765 (5 V) 2SD2551 (5 V)
2SC4806 (5 V)
3.5 A 4A
2SC4766 (5 V)
2SC4761 (5 V)
4.5 A
2SD2253 (5 V)
5A
2SD2638 (5 V) 2SC5143 (3 V) 2SC5716 (5 V) 2SD2428 (5 V) 2SD2454 (5 V) 2SD2553 (5 V)
5.5 A
2SC5150 (3 V)
2SC4608 (5 V)
2SC4760 (5 V)
6A
7A
2SC4532 (5 V) 2SC5332 (3 V)
* S3H60 (3 V)
8A
9A 10 A
* S3G18 (3 V)
2SC5588 (3 V)
2SC5144 (3 V) 2SC5422 (3 V) 2SC5590 (3 V) 2SC5446 (3 V)
* 2SC5997 ( 1.5V)
11 A 12 A
2SC5748 (3 V)
14 A
15 A
2SC5857 (1.5 V)
2SC5858 (1.5 V) 2SC5859 (3 V) 2SC5570 (3 V)
2SC5612 (3 V)
17 A 18 A 22 A
23
PRODUCT GUIDE
2003-9
BCE0015A
Horizontal-Deflection Output Transistors
OVERSEAS SUBSIDIARIES AND AFFILIATES
Toshiba America Electronic Components, Inc.
Headquarters-Irvine, CA
9775 Toledo Way, Irvine, CA 92618, U.S.A. Tel: (949)455-2000 Fax: (949)859-3963
Toshiba Electronics Europe GmbH
Düsseldorf Head Office
Hansaallee 181, D-40549 Düsseldorf, Germany Tel: (0211)5296-0 Fax: (0211)5296-400
Toshiba Electronics Asia, Ltd.
Hong Kong Head Office
Level 11, Tower 2, Grand Century Place, No.193, Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: 2375-6111 Fax: 2375-0969
Boulder, CO (Denver)
3100 Araphahoe #500, Boulder, CO 80303, U.S.A. Tel: (303)442-3801 Fax: (303)442-7216
München Office
Büro München Hofmannstrasse 52, D-81379, München, Germany Tel: (089)748595-0 Fax: (089)748595-42
Beijing Office
Room 714, Beijing Fortune Building, No.5 Dong San Huan Bei-Lu, Chao Yang District, Beijing, 100004, China Tel: (010)6590-8796 Fax: (010)6590-8791
Wellington
PBM 337, #22, 11924 Forest Hill Blvd., Wellington, FL 33414, U.S.A. Tel: (561)733-4949 Fax: (561)753-1489
Toshiba Electronics France S.A.R.L.
Immeuble Robert Schuman 3 Rue de Rome F-93561, Rosny-Sous-Bois, Cédex, France Tel: (1)48-12-48-12 Fax: (1)48-94-51-15
Chengdu Office
Suite 403A, Holiday Inn Crown Plaza 31, Zongfu Street, Chengdu, 610016, Sichuan, China Tel: (028)8675-1773 Fax: (028)8675-1065
Deerfield, IL (Chicago)
One Pkwy., North, #500, Deerfield, IL 60015-2547, U.S.A. Tel: (847)945-1500 Fax: (847)945-1044
Toshiba Electronics Italiana S.R.L.
Centro Direzionale Colleoni, Palazzo Perseo 3, I-20041 Agrate Brianza, (Milan), Italy Tel: (039)68701 Fax: (039)6870205
Horizontal-Deflection Output Transistors
Shenzhen Office
Room 3010-3013, Office Tower Shun Hing Square, Di Wang Commercial Centre, 5002 ShenNan East Road, Shenzhen, 518008, China Tel: (0755)246-3218 Fax: (0755)246-1581
Duluth, GA (Atlanta)
3700 Crestwood Pkwy, #160, Duluth, GA 30096, U.S.A. Tel: (770)931-3363 Fax: (770)931-7602
Toshiba Electronics Espańa, S.A.
Parque Empresarial, San Fernando, Edificio Europa, 1a Planta, E-28831 Madrid, Spain Tel: (91)660-6798 Fax:(91)660-6799
Qingdao Office
Room B707, Full Hope Plaza, 12 Hong Kong Central Road, Qingdao, Shandong, 266071, China Tel: (0532)502-8105 Fax: (0532)502-8109
Edison, NJ
2035 Lincoln Hwy, #3000, Edison, NJ 08817, U.S.A. Tel: (732)248-8070 Fax: (732)248-8030
Toshiba Electronics (UK) Ltd.
Riverside Way, Camberley Surrey, GU15 3YA, U.K. Tel: (01276)69-4600 Fax: (01276)69-4800
Beaverton/Portland, OR
1700 NW 167th Place, #240, Beaverton, OR 97006, U.S.A. Tel: (503)629-0818 Fax: (503)629-0827
Toshiba Electronics Scandinavia A.B.
Gustavslundsvägen 18, 5th Floor, S-167 15 Bromma, Sweden Tel: (08)704-0900 Fax: (08)80-8459
Toshiba Electronics Korea Corporation
Seoul Head Office
14F, KEC Building, 275-7 Yangjae-dong, Seocho-ku, Seoul, 137-739, Korea Tel: (02)589-4334 Fax: (02)589-4302
Raleigh, NC
3120 Highwoods Blvd., #108, Raleigh, NC 27604, U.S.A. Tel: (919)859-2800 Fax: (919)859-2898
Toshiba Electronics Asia (Singapore) Pte. Ltd.
Singapore Head Office
438B Alexandra Road, #06-08/12 Alexandra Technopark, Singapore 119968 Tel: (6278)5252 Fax: (6271)5155
Gumi Office
6F, Goodmorning Securities Building, 56 Songjung-dong, Gumi-shi, Kyeongbuk, 730-090, Korea Tel: (054)456-7613 Fax: (054)456-7617
Richardson, TX (Dallas)
777 East Campbell Rd., #650, Richardson, TX 75081, U.S.A. Tel: (972)480-0470 Fax: (972)235-4114
Toshiba Electronics (Shanghai) Co., Ltd.
23F, HSBC Tower, 101 Yin Cheng East Road, Pudong New Area, Shanghai, 200120, China Tel: (021)6841-0666 Fax: (021)6841-5002
San Jose Engineering Center, CA
1060 Rincon Circle, San Jose, CA 95131, U.S.A. Tel: (408)526-2400 Fax:(408)526-8910
Toshiba Electronics Service (Thailand) Co., Ltd.
135 Moo 5, Bangkadi Industrial Park, Tivanon Road, Pathumthani, 12000, Thailand Tel: (02)501-1635 Fax: (02)501-1638
Wakefield, MA (Boston)
401 Edgewater Place, #360, Wakefield, MA 01880-6229, U.S.A. Tel: (781)224-0074 Fax: (781)224-1095
Toshiba Electronics Trading (Malaysia)Sdn. Bhd.
Kuala Lumpur Head Office
Suite W1203, Wisma Consplant, No.2, Jalan SS 16/4, Subang Jaya, 47500 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: (03)5631-6311 Fax: (03)5631-6307
Tsurong Xiamen Xiangyu Trading Co., Ltd.
8N, Xiamen SEZ Bonded Goods Market Building, Xiamen, Fujian, 361006, China Tel: (0592)562-3798 Fax: (0592)562-3799
Toshiba do Brasil, S.A.
Electronics Component Div.
Rua Afonso Celso, 552 3 and CEP 04119-002 Vila Mariana-Sćo Paulo-SP, Brasil Tel: (011)5576-6619 Fax: (011)5576-6607
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Toshiba Electronics Taiwan Corporation
Taipei Head Office
17F, Union Enterprise Plaza Building, 109 Min Sheng East Road, Section 3, Taipei, 105, Taiwan Tel: (02)2514-9988 Fax: (02)2514-7892
Penang Office
Suite 13-1, 13th Floor, Menara Penang Garden, 42-A, Jalan Sultan Ahmad Shah, 10050 Penang, Malaysia Tel: (04)226-8523 Fax: (04)226-8515
Toshiba India Private Ltd.
6F DR. Gopal Das Bhawan 28, Barakhamba Road, New Delhi, India Tel: (011)331-8422 Fax: (011)371-4603
Kaohsiung Office
16F-A, Chung-Cheng Building, 2, Chung-Cheng 3Road, Kaohsiung, 800, Taiwan Tel: (07)237-0826 Fax: (07)236-0046 (As of April 1, 2003)
Toshiba Electronics Philippines, Inc.
26th Floor, Citibank Tower, Valero Street, Makati, Manila, Philippines Tel: (02)750-5510 Fax: (02)750-5511
The information contained herein is subject to change without notice.
021023_D
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 021023_C TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. 021023_A The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of Toshiba products listed in this document shall be made at the customer's own risk.
021023_B
Semiconductor Company
Website: http://www.semicon.toshiba.co.jp/eng
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030519_Q
2003
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