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TLP131
TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
TLP131
Office Machine Programmable Controllers AC / DC-Input Module Telecommunication
The TOSHIBA mini flat coupler TLP131 is a small outline coupler, suitable for surface mount assembly. TLP131 consists of a photo transistor, optically coupled to a gallium arsenide infrared emitting diode. · · · · Collector-emitter voltage: 80V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) Isolation voltage: 3750Vrms (min.) UL recognized: UL1577, file No. E67349 TOSHIBA Weight: 0.09 g 11-4C2 Unit in mm
TLP131 base terminal is for the improvement of speed, reduction of dark current, and enable operation.
Pin Configurations (top view)
1 6 5 3 1 : Anode 3 : Cathode 4 : Emitter 5 : Collector 6 : Base 4
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TLP131
Current Transfer Ratio
Type Classification Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°C Min. Max. 50 50 100 100 600 150 300 600 Marking Of Classification
(None) TLP131 Rank Y Rank GR Rank GB
BLANK, Y, Y, G, G, B, B, GB Y, Y G, G G, G, B, B, GB
Note: Application type name for certiffication test,please use standard product type name,i.e. TLP131(GB): TLP131
Maximum Ratings (Ta = 25°C)
Characteristic Forward current Forward current derating (Ta53°C) LED Peak forward current (100µs pulse,100pps) Reverse voltage Junction temperature Collector-emitter voltage Collector-base voltage Emitter-collector voltage Detector Emitter-base voltage Collector current Peak collector current (10ms pulse,100pps) Power dissipation Power dissipation derationg (Ta 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10s) Total package power dissipation Total package power dissipation derating (Ta 25°C) Isolation voltage (AC, 1min., RH 60%) (Note 1) Symbol IF IF / °C IFP VR Tj VCEO VCBO VECO VEBO IC ICP PC PC / °C Tj Tstg Topr Tsol PT PT / °C BVS Rating 50 -0.7 1 5 125 80 80 7 7 50 100 150 -1.5 125 -55~125 -55~100 260 200 -2.0 3750 Unit mA mA / °C A V °C V V V V mA mA mW mW / °C °C °C °C °C mW mW / °C Vrms
(Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted together.
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Recommended Operating Conditions
Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF IC Topr Min. -25 Typ. 5 16 1 Max. 48 25 10 85 Unit V mA mA °C
Individual Electrical Characteristics (Ta = 25°C)
Characteristic Forward voltage LED Reverse current Capacitance Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Detector collector dark current Symbol VF IR CT V(BR)CEO V(BR)ECO V(BR)CBO V(BR)EBO ICEO Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz IC = 0.5mA IE = 0.1mA IC = 0.1mA IE = 0.1mA VCE = 48V VCE = 48V,Ta = 85°C VCE = 48V,Ta = 85°C RBE = 1M VCB = 10V VCE = 5V,IC = 0.5mA V = 0, f = 1MHz Min. 1.0 80 7 80 7 Typ. 1.15 30 10 2 0.5 0.1 400 10 Max. 1.3 10 100 50 10 Unit V µA pF V V V V nA µA µA nA pF
Collector dark current Collector dark current DC forward current gain Capacitance (collector to emitter)
ICER ICBO hFE CCE
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB IF = 5mA,VCB = 5V IC = 2.4 mA, IF = 8 mA Collector-emitter saturation voltage Off-state collector current VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB IF = 0.7mA, VCE = 48 V Min. 50 100 30 Typ. 60 10 0.2 1 Max. 600 600 0.4 0.4 10 µA V Unit %
Saturated CTR Base photo-current
IC / IF (sat) IPB
% µA
IC (off)
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Isolation Characteristics (Ta = 25°C)
Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. 5×10
10
Typ. 0.8 10
14
Max.
Unit pF Vrms Vdc
3750
10000 10000
Switching Characteristics (Ta = 25°C)
Characteristic Rise time Fall time Turn-on time Turn-off time Turn-on time Storage time Turn-off time Turn-on time Storage time Turn-off time Symbol tr tf ton toff tON ts tOFF tON ts tOFF RL = 1.9 k%) RBE = OPEN VCC = 5 V, IF = 16 mA RL = 1.9 k%) RBE = 220 k VCC = 5 V, IF = 16 mA (Fig.1) VCC = 10 V, IC = 2 mA RL = 100 Test Condition Min. (Fig.1) Typ. 2 3 3 3 2 25 40 2 20 30 Max. µs µs µs Unit
Fig. 1 Switching time test circuit
IF tS VCE VCC 4.5V 0.5V tOFF
IF
VCC RL RBE VCE
tON
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TLP131
IF Ta
100 200
PC Ta
Allowable forward current IF (mA)
Allowable collector power dissipation PC (mW)
100 120
80
160
60
120
40
80
20
40
0 -20
0
20
40
60
80
0 -20
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
IFP DR
3000 100 Pulse width 100ms Ta = 25°C 50 Ta = 25°C
IF VF
Pulse forward current IFP (mA)
500 300
IF (mA) Forward current
10
-3
1000
30
10 5 3
100 50 30
1 0.5 0.3
10 3
3
10
-2
3
10
-1
3
10
0
Duty cycle ratio DR
0.1 0.6
0.8
1.0
1.2
1.4
1.6
1.8
Forward voltage
VF (V)
Forward voltage temperature coefficient DVF / DTa (mV / °C)
DVF / DTa IF
-3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 1000
IFP VFP (mA) IFP Pulse forward current
500 300
100 50 30
10 5 3 1 1.0 1.4 Pulse width 10ms Repetitive Frequency = 100Hz Ta = 25°C 1.8 2.2 2.6 3.0
0.3 0.5
1
3
5
10
30
50
Forward current
IF (mA)
Pulse forward voltage VFP
(V)
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TLP131
IC VCE
50 50mA 40 30mA 20mA 15mA 10mA PC(MAX.) 20 IF = 5mA 10 Ta = 25°C 30 Ta = 25°C
IC VCE
IC (mA)
(mA)
IF = 50mA 40mA 20 30mA 20mA 10mA
Collector current IC
Collector current
30
10
5mA
2mA 0 0
0 0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
Collectoremitter voltage VCE (V)
Collectoremitter voltage VCE (V)
IC IF
100 50
IC / IF IF
1000
Collector current IC (mA)
10 5 3
Current transfer ratio IC / IF
30
(%)
Ta = 25°C
VCE = 10V VCE = 5V VCE = 0.4V
Ta = 25°C
500
SAMPLE A
300 SAMPLE A
SAMPLE B 1 0.5 0.3 0.1 0.3 VCE = 10V VCE = 5V VCE = 0.4V
100 SAMPLE B 50
0.5
1
3
5
10
30
50
100
0.3
0.5
1
3
5
10
30
50
100
Forward current
IF (mA)
Forward current
IF (mA)
IC IF at RBE
100 Ta = 25°C 50 VCE = 5V 30 10 5 3 IF 1 0.5 0.3 0.1 0.1 RBE = 500kW 50kW RBE 100kW VCC 300 Ta = 25°C IF VCB
IPB IF
(ms) IPB
(mA)
100
30
Collector current IC
Base photo current
10 3 1 0.3 0.1 0.1
A
VCB = 0V VCB = 5V
A
0.3 0.5
1
3
5
10
30
50
100
0.3 0.5
1
3
5
10
30
50 100
Forward current
IF (mA)
Forward current
IF (mA)
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TLP131
ICEO Ta
101 0.24
VCE(sat) Ta
IF = 5mA Ic = 1mA
0.20 10
0
Collectoremitter saturation voltage VCE(sat) (V)
0.16
Collector dark current ICEO (µA)
VCE = 48V 10-1
24V 10V 5V
0.12
0.08
0.04 10-2
0 -40
-20
0
20
40
60
80
100
Ambient temperature Ta ()
10-3
10-4 0
20
40
60
80
100
120
Ambient temperature Ta ()
IC Ta
100 VCE = 5V IF = 25mA 10mA 100 300
Switching Time RL
Ta = 25 IF = 16mA VCC = 5V RBE = 220k
50 30
(mA)
5mA 10 50
IC
(ms)
tOFF ts
5 3
30
Collector current
Switching time
1mA 1
10
5 0.5 0.3 0.5mA 3 tON
0.1 -20 0 20
40
60
80
100
1 1
3
5
10
30
50
100
Ambient temperature Ta ()
Load resistance RL
(k9)
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TLP131
Switching Time RBE
1000 500 Ta = 25 IF = 16mA VCC = 5V RL = 1.9k 1000 Ta = 25°C IF = 16mA 500 VCC = 5V 300
Switching Time RL
300
tOFF
100
100 tOFF
(ms)
(ms)
50 30 ts
50 30
ts
Switching time
10
Switching time
10
5 3 tON
5 3 tON
1 100k
300k
1M
3M
1 1
3
5
10
30
50
100
Base-emitter resistance RBE
(9)
Load resistance RL (9)
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TLP131
RESTRICTIONS ON PRODUCT USE
000707EBC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice.
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