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(IPD)

MIP2E4DMY
MOS

I Unit : mm
· 4.5±0.2
· 10.5±0.5




2.8±0.2
1.5±0.2
9.5±0.2 1.4±0.1
8.0±0.2

I




6.7±0.3
·




2.8±0.2
15.4±0.3
3.7±0.2

I Ta = 25°C ± 3°C
1.4±0.1
2.5±0.2




13.5±0.5

Solder Dip
4.2±0.3
0.8±0.1 0.6 +0.1




(9.3)
­0.2
VD 700 V
VC 10 V 2.54±0.3
5.08±0.5
ID 1.72 A
IDP 2.4 A 1 2 3
1 : Control
IC 0.1 A 2 : Source
Tch 150 °C 3 : Drain
TO-220-A1 Package
Tstg -55 +150 °C
: MIP2E4DMY




I

1
Control 3
Drain




S Q

R Q MOSFET



Max Duty
Clock S Q
Sawtooth
V-I
R Q




2
Source



: 2001 8 SLB00030BJD 1
MIP2E4DMY

I TC = 25°C ± 2°C



fOSC VC = VC(CNT) - 0.2 V 90 100 110 kHz
MAXDC VC = VC(CNT) - 0.2 V 66 69 72 %
PWM * GPWM 11 dB
* m 60 mA/µs


IC(SB) VC < VC(ON) 0.05 0.30 0.6 mA
IC(OP) VC = VC(CNT) - 0.2 V 0.7 1.8 2.7 mA
VC(ON) 5.1 6.0 6.6 V
VC(OFF) 4.1 5.0 5.5 V
/ VC 0.5 1.0 1.5 V
TSW / TTIM 2 %
fTIM 0.5 Hz
IC(CHG) VC = 0 V -2.5 -1.9 -1.2 mA
VC = 5 V -2.0 -1.2 - 0.5
VC(CNT) 5.7 6.2 6.6 V
* VC(CNT) 10 mV
VD(MIN) 36 V


ILIMIT 1.35 1.5 1.65 A
* ton(BLK) 0.25 µs
* td(OCL) 0.1 µs
* TOTP 130 140 °C
* VC reset 2.3 3.3 4.2 V


RDS(ON) ID = 0.3 A 5.8 6.7
IDSS VDS = 650 V, VC = 6.5 V 10 250 µA
VDSS ID = 0.25 mA, VC = 6.5 V 700 V
tr 0.1 µs
tf 0.1 µs
* Rth(ch-c) 3.0 °C/W
* Rth(ch-a) 70 °C/W
) *:




2 SLB00030BJD
(1)



(2)



(3) -- (
)


-- ( )




(4)




(5)




(6) (
)

(7)




( )

A.




B.



C.




2001 MAR