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AOP605 Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP605 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AOP605 is Pb-free (meets ROHS & Sony 259 specifications). AOP605L is a Green Product ordering option. AOP605 and AOP605L are electrically identical.

Features
n-channel p-channel -30V VDS (V) = 30V ID = 7.5A (VGS = 10V) -6.6A (VGS = -10V) RDS(ON) < 28m
(VGS = 10V)

< 35m (VGS = -10V)

< 43m (VGS = 4.5V) < 58m (VGS = -4.5V)
D2 D1

S2 G2 S1 G1

1 2 3 4

8 7 6 5

D2 D2 D1 D1

G2 S2

G1 S1

PDIP-8

n-channel

p-channel

Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current Power Dissipation
B

Max p-channel -30 ±20 -6.6 -5.3 -30 2.5 1.6 -55 to 150

Units V V A

TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG

7.5 6 30 2.5 1.6 -55 to 150

W °C

Junction and Storage Temperature Range Thermal Characteristics: n-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Thermal Characteristics: p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C

Symbol t 10s Steady-State Steady-State RJA RJL Symbol t 10s Steady-State Steady-State RJA RJL

Typ 40 67 33 Typ 38 66 30

Max 50 80 40 Max 50 80 40

Units °C/W °C/W °C/W Units °C/W °C/W °C/W

Alpha & Omega Semiconductor, Ltd.

AOP605

n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=7.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6.0A Forward Transconductance VDS=5V, ID=7.5A 12 Body Diode Forward Voltage IS=1A, VGS=0V Maximum Body-DiodeContinuous Current TJ=125°C 33 16 0.76 1 4 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 102 77 3 13.84 VGS=4.5V, VDS=15V, ID=7.5A 6.74 1.82 3.2 4.6 VGS=10V, VDS=15V, RL=2.0, RGEN=6 IF=7.5A, dI/dt=100A/µs 4.1 20.6 5.2 16.5 7.8 20 3.6 16.6 8.1 820 43 1 30 22.6 28 1.8 Min 30 1 5 100 3 Typ Max Units V µA nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current

DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance. Coss Crss Rg Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery time

Body Diode Reverse Recovery charge IF=7.5A, dI/dt=100A/µs

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 3 : June 2005
2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha Omega Semiconductor, Ltd.

AOP605 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

30 25 20 ID (A) 15 10 5 0 0

10V

6V 5V 4.5V

20 16 12 8 4 0 125°C 25°C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS=5V

4V ID(A) 4 5

3.5V VGS=3V

1

2

3

VDS (Volts) Fig 1: On-Region Characteristics

VGS (Volts) Figure 2: Transfer Characteristics

60 50 RDS(ON) (m) 40 30 20 10 0 5 10 15 20 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V Normalized On-Resistance

1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature ID=7.5A VGS=10V

VGS=4.5V

VGS=10V

70 60 RDS(ON) (m) 50 40 30 20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C ID=7.5A IS Amps

1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body diode characteristics 25°C 125°C

Alpha & Omega Semiconductor, Ltd.

AOP605 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 7: Gate-Charge characteristics 1000 VDS=15V ID=7.5A Capacitance (pF) 900 800 700 600 500 400 300 200 100 0 0 Crss 5 10 15 20 25 30 Coss Ciss f=1MHz VGS=0V

VDS (Volts) Figure 8: Capacitance Characteristics

100 RDS(ON) limited

TJ(Max)=150°C TA=25°C 1ms 10ms 0.1s 100µs 10µs Power W

40 TJ(Max)=150°C TA=25°C

30

ID (Amps)

10

20

1

1s 10s DC 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100

10

0.1

0 0.001

0.01

0.1

1

10

100

1000

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 ZJA Normalized Transient Thermal Resistance

D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50°C/W

In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1

0.1

PD Ton T 100 1000

Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1

10

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AOP605

p-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-6.6A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-6.6A TJ=125°C -1.2 30 28 37 44 13 -0.76 -1 -4.2 920 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 190 122 3.6 18.5 VGS=-10V, VDS=-15V, ID=-6.6A 9.6 2.7 4.5 7.7 VGS=-10V, VDS=-15V, RL=2.3, RGEN=3 IF=-6.6A, dI/dt=100A/µs 5.7 20.2 9.5 20 8.8 24 4.4 22.2 11.6 1100 35 45 58 -2 Min -30 -1 -5 ±100 -2.4 Typ Max Units V µA nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC

DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance

SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time

Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-6.6A, dI/dt=100A/µs

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any en application depends on the the user's specific board design. The current rating is based the the 10s10s thermal given application depends on user's specific board design. The current rating is based on on t t thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in SOA curve provides a single pulse rating. Rev 3 : June 2005
2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha Omega Semiconductor, Ltd.

AOP605

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30 -10V 25 20 -ID (A) 15 10 5 VGS=-3V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 60 VGS=-4.5V Normalized On-Resistance 55 50 45 RDS(ON) (m) 40 35 30 25 20 15 10 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 65 60 55 RDS(ON) (m) 50 45 40 35 30 25 20 3 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4 5 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25°C 125°C 1.0E-01 125°C -IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 25°C ID=-6.6A 1.0E+01 1.0E+00 0.80 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature VGS=-10V 1.60 ID=-6.6A 1.40 VGS=-10V VGS=-4.5V 1.20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -3.5V -6V -5V -4.5V 25 20 -ID(A) 15 10 5 125°C 25°C 30 VDS=-5V

-4V

1.00

Alpha & Omega Semiconductor, Ltd.

AOP605

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10 8 -VGS (Volts) 6 VDS=-15V ID=-6.6A Capacitance (pF) 1500 1250 Ciss 1000 750 500 Coss 250 0 0 4 8 12 16 20 0 5 10 15 20 25 30 -Qg (nC) Figure 7: Gate-Charge Characteristics -VDS (Volts) Figure 8: Capacitance Characteristics Crss

4 2 0

100.0 TJ(Max)=150°C, TA=25°C RDS(ON) limited 0.1s 1.0 10µs 100µs 1ms 10ms 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC Power (W)

40 TJ(Max)=150°C TA=25°C 30

-ID (Amps)

10.0

20

10

0 0.001

0.01

0.1

1

10

100

1000

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 T

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.