Text preview for : 2SD2494.pdf part of Sanken 2SD2494 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1625)
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Equivalent circuit
C
Darlington
2SD2494
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=0.5A VCB=10V, f=1MHz 2SD2494 100max 100max 110min 5000min 2.5max 3.0max 60typ 55typ V V
16.2
B
(7 0 )
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1625) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2494 110 110 5 6 1 60(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C
Application : Audio, Series Regulator and General Purpose
(Ta=25°C) Unit
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
µA
23.0±0.3
V
9.5±0.2
µA
a b
MHz pF
1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1
3.3
0.8
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL () 6 IC (A) 5 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 5 IB2 (mA) 5 ton (µs) 0.8typ tstg (µs) 6.2typ tf (µs) 1.1typ
3.35
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
I C V CE Characteristics (Typical)
A 1m
V CE ( sat ) I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t) (V ) 3
I C V BE Temperature Characteristics (Typical)
6 (V CE =4V)
6
5mA
0.
5m
A
0. 4m A
0.3 mA
Collector Current I C (A)
4
0.2mA
Collector Current I C (A)
2
4
mp)
I C =5A
p)
2
Cas
1 I C =3A
2
e Tem
°C (
25°C
I B =0.1mA
0
0
2
4
6
0
0.1
0.5
1
5
10
50
100
0
0
1
30°C
125
(Case
(Cas
Temp
e Te
)
2
3.0
2.5
Collector-Emitter Voltage V C E (V)
Base Current I B (mA)
Base-Emittor Voltage V B E (V)
h FE I C Characteristics (Typical)
(V C E =4V) 40000 DC C urrent G ain h FE
h FE I C Temperature Characteristics (Typical)
(V C E =4V) 40000 DC Cur rent Gain h F E
j - a (° C/W)
j-a t Characteristics
5
Typ
10000 5000
10000 5000
125°C 25°C
1000 500 30°C
Transient Thermal Resistance
1
1000 500 200 0.02
0.5 1 5 10 50 100 Time t(ms) 500 1000 2000
0.1
0.5
1
5 6
100 0.02
0.1
0.5
1
56
Collector Current I C (A)
Collector Current I C (A)
f T I E Characteristics (Typical)
(V C E =12V) 80 20
Safe Operating Area (Single Pulse)
60
P c T a Derating
Typ
10 5
10
60 Co lle ctor Cu rren t I C (A)
M aximu m Power Dissipa tion P C (W)
10
Cu t-of f Fr eque ncy f T (MH Z )
W
m
D
ith
s
C
0m s
40
In fin ite he
40
1 0.5 Without Heatsink Natural Cooling 0.1
at si nk
20
20
Without Heatsink 5 10 50 100 200 3.5 0 0 25 50 75 100 125 150
0 0.02
0.1
1
6
0.05 3
Emitter Current I E (A)
Collector-Emitter Voltage V C E (V)
Ambient Temperature Ta(°C)
154