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Parent Directory IRF340.pdf IRF510A.pdf IRF520A.pdf IRF530A.pdf IRF540A.pdf IRF550A.pdf IRF610A.pdf IRF614.pdf IRF614A.pdf IRF614S.pdf IRF620A.pdf IRF624.pdf IRF624A.pdf IRF630A.pdf IRF634.pdf IRF634A.pdf IRF634S.pdf IRF640A.pdf IRF644.pdf IRF644A.pdf IRF650A.pdf IRF654.pdf IRF654A.pdf 22-Dec-99 00:09 22-Dec-99 00:09 22-Dec-99 00:09 22-Dec-99 00:09 22-Dec-99 00:09 22-Dec-99 00:09 22-Dec-99 00:09 22-Dec-99 00:09 16-Apr-99 13:01 22-Dec-99 00:09 22-Dec-99 00:09 22-Dec-99 00:09 16-Apr-99 13:01 22-Dec-99 00:09 22-Dec-99 00:09 16-Apr-99 13:01 22-Dec-99 00:09 22-Dec-99 00:09 16-Feb-00 00:00 16-Apr-99 13:01 22-Dec-99 00:09 22-Dec-99 00:09 16-Apr-99 13:01 232K 247K 243K 254K 256K 261K 250K 242K 229K 240K 256K 246K 232K 256K 237K 224K 234K 260K 237K 226K 257K 482K 2M
IRF710.pdf IRF710A.pdf IRF720.pdf IRF720A.pdf IRF730.pdf IRF730A.pdf IRF740.pdf IRF740A.pdf IRF750.pdf IRF750A.pdf IRF820.pdf IRF820A.pdf IRF820S.pdf IRF830.pdf IRF830A.pdf IRF830S.pdf IRF840.pdf IRF840A.pdf IRF840S.pdf IRFI510A.pdf IRFI520A.pdf IRFI530A.pdf IRFI540A.pdf IRFI550A.pdf IRFI610A.pdf IRFI614A.pdf IRFI620A.pdf
22-Dec-99 00:09 16-Apr-99 13:01 22-Dec-99 00:09 16-Apr-99 13:01 22-Dec-99 00:09 16-Apr-99 13:01 22-Dec-99 00:09 16-Apr-99 13:01 22-Dec-99 00:09 16-Apr-99 13:01 22-Dec-99 00:09 16-Apr-99 13:01 22-Dec-99 00:09 22-Dec-99 00:09 16-Apr-99 13:01 22-Dec-99 00:09 22-Dec-99 00:09 16-Apr-99 13:01 22-Dec-99 00:09 22-Dec-99 00:09 22-Dec-99 00:09 22-Dec-99 00:09 22-Dec-99 00:09 22-Dec-99 00:09 22-Dec-99 00:09 16-Apr-99 13:01 22-Dec-99 00:09
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IRFI624A.pdf IRFI630A.pdf IRFI634A.pdf IRFI640A.pdf IRFI644A.pdf IRFI710A.pdf IRFI720A.pdf IRFI730A.pdf IRFI740A.pdf IRFI820A.pdf IRFI830A.pdf IRFI840A.pdf IRFIZ14A.pdf IRFIZ24A.pdf IRFIZ34A.pdf IRFIZ44A.pdf IRFM014A.pdf IRFM110A.pdf IRFM120A.pdf IRFM210A.pdf IRFM220A.pdf IRFP140A.pdf IRFP150A.pdf IRFP240A.pdf IRFP244.pdf IRFP244A.pdf IRFP250A.pdf
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IRFP254.pdf IRFP254A.pdf IRFP340P.pdf IRFP350.pdf IRFP350P.pdf IRFP440.pdf IRFP440A.pdf IRFP450.pdf IRFP450A.pdf IRFP460.pdf IRFR014.pdf IRFR014A.pdf IRFR024A.pdf IRFR034.pdf IRFR034A.pdf IRFR110A.pdf IRFR120A.pdf IRFR130A.pdf IRFR210A.pdf IRFR214.pdf IRFR214A.pdf IRFR220A.pdf IRFR224.pdf IRFR224A.pdf IRFR230A.pdf IRFR234.pdf IRFR234A.pdf
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IRFR310.pdf IRFR310A.pdf IRFR320.pdf IRFR320A.pdf IRFR330.pdf IRFR330A.pdf IRFR420.pdf IRFR420A.pdf IRFR430.pdf IRFR430A.pdf IRFR9024.pdf IRFR_U110A.pdf IRFR_U120A.pdf IRFR_U130A.pdf IRFR_U210A.pdf IRFR_U220A.pdf IRFR_U230A.pdf IRFS140A.pdf IRFS150A.pdf IRFS240A.pdf IRFS244.pdf IRFS244A.pdf IRFS250A.pdf IRFS254.pdf IRFS254A.pdf IRFS340.pdf IRFS340A.pdf
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IRFS350.pdf IRFS350A.pdf IRFS440.pdf IRFS440A.pdf IRFS450.pdf IRFS450A.pdf IRFS460.pdf IRFS510A.pdf IRFS520A.pdf IRFS530A.pdf IRFS540A.pdf IRFS550A.pdf IRFS610A.pdf IRFS620A.pdf IRFS630A.pdf IRFS640A.pdf IRFS650A.pdf IRFS710A.pdf IRFS720A.pdf IRFS730A.pdf IRFS740A.pdf IRFS750A.pdf IRFS820A.pdf IRFS830A.pdf IRFS840A.pdf IRFSZ14A.pdf IRFSZ24A.pdf
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IRFSZ34A.pdf IRFSZ44A.pdf IRFU014A.pdf IRFU024A.pdf IRFU034A.pdf IRFU110A.pdf IRFU120A.pdf IRFU130A.pdf IRFU210A.pdf IRFU214A.pdf IRFU220A.pdf IRFU224A.pdf IRFU230A.pdf IRFU234A.pdf IRFU310A.pdf IRFU320A.pdf IRFU330A.pdf IRFU410A.pdf IRFU420A.pdf IRFU430A.pdf IRFW20A.pdf IRFW510A.pdf IRFW520A.pdf IRFW530A.pdf IRFW540A.pdf IRFW550A.pdf IRFW610A.pdf
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IRFW614A.pdf IRFW620A.pdf IRFW624A.pdf IRFW630A.pdf IRFW634A.pdf IRFW640A.pdf IRFW644A.pdf IRFW710A.pdf IRFW710S.pdf IRFW720A.pdf IRFW720S.pdf IRFW730A.pdf IRFW730S.pdf IRFW740A.pdf IRFW740S.pdf IRFW820A.pdf IRFW830A.pdf IRFW840A.pdf IRFWZ14.pdf IRFWZ14A.pdf IRFWZ24.pdf IRFWZ24A.pdf IRFWZ34.pdf IRFWZ34A.pdf IRFWZ44.pdf IRFWZ44A.pdf IRFW_I510A.pdf
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IRFW_I520A.pdf IRFW_I530A.pdf IRFW_I540A.pdf IRFW_I550A.pdf IRFW_I610A.pdf IRFW_I620A.pdf IRFW_I630A.pdf IRFW_I640A.pdf IRFW_IZ24A.pdf IRFZ14.pdf IRFZ14A.pdf IRFZ24.pdf IRFZ24A.pdf IRFZ34.pdf IRFZ34A.pdf IRFZ44.pdf IRFZ44A.pdf IRL510.pdf IRL510A.pdf IRL520A.pdf IRL520S.pdf IRL530.pdf IRL530A.pdf IRL540.pdf IRL540A.pdf IRL610.pdf IRL610A.pdf
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IRL610S.pdf IRL620.pdf IRL620A.pdf IRL620S.pdf IRL630.pdf IRL630A.pdf IRL630S.pdf IRL640.pdf IRL640A.pdf IRL640S.pdf IRLI510A.pdf IRLI530A.pdf IRLI540A.pdf IRLI610A.pdf IRLI620A.pdf IRLI630A.pdf IRLI640A.pdf IRLII520A.pdf IRLR110A.pdf IRLR120A.pdf IRLR120N.pdf IRLR130A.pdf IRLR210.pdf IRLR210A.pdf IRLR220.pdf IRLR220A.pdf IRLR230.pdf
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IRLR230A.pdf IRLU110A.pdf IRLU120A.pdf IRLU130A.pdf IRLU210A.pdf IRLU220A.pdf IRLU230A.pdf IRLW510A.pdf IRLW520A.pdf IRLW530A.pdf IRLW540A.pdf IRLW610A.pdf IRLW620A.pdf IRLW630A.pdf IRLW640A.pdf
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$GYDQFHG 3RZHU 026)(7
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10µA (Max.) @ VDS = 400V Lower RDS(ON): 0.437 (Typ.)
1 2 3
IRF340
BVDSS = 400 V RDS(on) = 0.55 ID = 11 A
TO-3P
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds
(2) (1) (1) (3) (1)
Value 400 11 7 44 ±30 553 11 16.2 4.0 162 1.3 - 55 to +150
Units V A A V mJ A mJ V/ns W W/°C
°C 300
Thermal Resistance
Symbol RJC RCS RJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -Max. 0.77 -40 °C/W Units
Rev. B
©1999 Fairchild Semiconductor Corporation
IRF340
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge Min. Typ. Max. Units 400 -2.0 -----------------0.50 ------8.01 175 80 18 21 78 28 58 8.1 31.3 --4.0 100 -100 10 100 0.55 -205 95 50 55 170 65 75 --nC ns µA V V nA
1&+$11(/ 32:(5 026)(7
Test Condition VGS=0V,ID=250µA
V/°C ID=250µA VGS=30V VGS=-30V VDS=400V
See Fig 7
VDS=5V,ID=250µA
VDS=320V,TC=125°C VGS=10V,ID=5.5A VDS=50V,ID=5.5A
(4) (4)
1180 1530 pF
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=200V,ID=10A, RG=9.1
See Fig 13
VDS=320V,VGS=10V, ID=10A
(4) (5)
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
(1) (4)
Min. Typ. Max. Units --------315 2.84 11 44 1.5 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25°C,IS=11A,VGS=0V TJ=25°C,IF=10A diF/dt=100A/µs
(4)
Notes; (1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) L=8mH, IAS=11A, VDD=50V, RG=27, Starting TJ =25°C (3) ISD 10A, di/dt 170A/µs, VDD BV DSS , Starting TJ =25°C (4) Pulse Test: Pulse Width = 250µs, Duty Cycle 2% (5) Essentially Independent of Operating Temperature
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Fig 1. Output Characteristics
VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
IRF340
Fig 2. Transfer Characteristics
ID , Drain Current [A]
ID , Drain Current [A]
11 0
11 0
1 0 oC 5 10 0 2 oC 5 @N ts : oe 1 V =0 V . GS 2 V =5 V . DS 0 us et 3 2 0 µs P l e T s . 5 6 8 1 0
10 0
@ Nt s: oe 1 2 0 µs P l e T s . 5 us et 2 T = 2 oC . C 5 1 -1 -1 0 1 0 10 0 11 0
- 5 oC 5 1 -1 0 2 4
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
12 .
Fig 4. Source-Drain Diode Forward Voltage IDR , R rs D in Cu ent [A] eve e ra rr
RDS(on) , [ ] Dr Sour O sis e ain- ce n-Re tanc
09 .
11 0
V =1 V 0 GS
06 .
10 0 @N ts : oe 1 V =0 V . GS 2 2 0 µs P l e T s . 5 us et 08 . 10 . 12 . 14 .
V =2 V 0 GS 03 . @ Nt :T =2 C oe J 5 00 . 0 1 0 2 0 3 0 4 0
o
1 0 oC 5 2 C 5 1 -1 0 02 . 04 . 06 .
o
I , Dra C nt [A] in urre D Fig 5. Capacitance vs. Drain-Source Voltage
20 00 C = C + C (C = so td ) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd 10 50
VSD , S ce ai Vol ge [ our -Dr n ta V] Fig 6. Gate Charge vs. Gate-Source Voltage
V =8 V 0 DS 1 0
Capacitance [pF]
C iss
VGS , Gate-Source Voltage [V]
V =2 0V 0 DS V =3 0V 2 DS
10 00 @ Nt s: oe 1 V =0 V . GS 2 f =1 M z . H
5
C oss 50 0 C rss
@N ts :I =1 . A oe 00 D 0 0 1 0 2 0 3 0 4 0 5 0 6 0
00 1 0
1 0
1
VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
IRF340
Fig 7. Breakdown Voltage vs. Temperature
12 . 30 .
1&+$11(/ 32:(5 026)(7
Fig 8. On-Resistance vs. Temperature
BVDSS , (Normalized) Drain-Source Breakdown Voltage
11 .
RDS(on) , (Normalized) Drain-Source On-Resistance
25 .
20 .
10 .
15 .
10 . @N ts : oe 1 V =1 V . GS 0 2 I =5 0A . D . -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7
09 .
@ Nt s: oe 1 V =0 V . GS 2 I = 2 0 µA . D 5 -0 5 -5 2 0 2 5 5 0 7 5 10 0
o
05 .
08 . -5 7
15 2
10 5
15 7
00 . -5 7
TJ , Junction Temperature [ C]
TJ , Junction Temperature [oC]
Fig 9. Max. Safe Operating Area
12 0 O ea in i T i Ae pr to n hs ra i L m t d b R DS(on) s i ie y 1 µs 0 1 0 µs 0 11 0 1 m 0 s D C 1m s
Fig 10. Max. Drain Current vs. Case Temperature
1 2
ID , Drain Current [A]
ID , Drain Current [A]
13 0
1 0
8
6
10 0
4
@ Nt s: oe 1 T = 2 oC . C 5 2 T = 1 0 oC . J 5 3 Sn l P le . ig e u s
2
1 -1 0 0 1 0
11 0
12 0
0 2 5
5 0
7 5
10 0
15 2
10 5
VDS , Drain-Source Voltage [V]
Tc , Case Temperature [oC]
Fig 11. Thermal Response
Thermal Response
100
D=0.5 @ Notes : 1. Z J C (t)=0.77 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t)
PDM
0.2 10- 1 0.1 0.05
Z JC(t) ,
0.02 0.01 10- 2 10- 5
single pulse
t1 t2
10- 4
10- 3
10- 2
10- 1
100
101
t1 , Square Wave Pulse Duration
[sec]
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Fig 12. Gate Charge Test Circuit & Waveform
IRF340
Current Regulator
50k 12V 200nF 300nF
Same Type as DUT
VGS Qg
10V
VDS VGS DUT
3mA
Qgs
Qgd
R1
Current Sampling (IG) Resistor
R2
Current Sampling (ID) Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL Vout Vin RG DUT Vin 10V
td(on) t on tr td(off) t off tf 10%
Vout VDD
( 0.5 rated VDS )
90%
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
LL VDS
Vary tp to obtain required peak ID
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp
ID
RG DUT 10V
tp
ID (t) VDS (t) Time
IRF340
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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DUT
+ VDS --
IS L Driver RG VGS
Same Type as DUT
VGS
VDD
dv/dt controlled by RG IS controlled by Duty Factor D
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
TRADEMARKS
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.)
IRF510A
BVDSS = 100 V RDS(on) = 0.4 ID = 5.6 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds
Value 100 5.6 4
1 O
Units V A A V mJ A mJ V/ns W W/ C
20 + 20 _ 63 5.6 3.3 6.5 33 0.22 - 55 to +175
O 1 O 1 O 3 O
2
C
300
Thermal Resistance
Symbol R JC RCS RJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 4.51 -62.5
Units
C /W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRF510A
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS BV/ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units 100 -2.0 -----------------0.11 ------3.49 190 55 21 10 14 28 18 8.5 1.6 4.1 --4.0 100 -100 10 100 0.4 -240 65 25 30 40 70 50 12 --nC ns pF µA V
Test Condition VGS=0V,ID=250 A See Fig 7 VDS=5V,ID=250 µ A VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150 C VGS=10V,ID=2.8A VDS=40V,ID=2.8A
4 O 4 O
V/ C ID=250µA V nA
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=5.6A, RG=24 See Fig 13 VDS=80V,VGS=10V, ID=5.6A See Fig 6 & Fig 12
4 5 OO 4 5 OO
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O
4 O
Min. Typ. Max. Units --------85 0.23 5.6 20 1.5 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=5.6A,VGS=0V TJ=25 C ,IF=5.6A diF/dt=100A/µ s
4 O
Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 O L=3mH, I AS=5.6A, VDD=25V, RG=27 , Starting T J =25oC o 3 _ _ _ O ISD < 5.6A, di/dt < 250A/ µs, V DD < BVDSS , Starting T J =25 C _ s, 4 O Pulse Test : Pulse Width = 250 µ Duty Cycle <2% 5 Essentially Independent of Operating Temperature O
N-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
VGS
IRF510A
Fig 2. Transfer Characteristics
[A] ID , Drain Current
101
[A]
101 V 0
15V : Top 1 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V
ID , Drain Current
175 oC
100
100 25 oC @ Notes : 1. V = 0 V GS 2. V = 40 V DS 3. 250 µs Pulse Test 6 8 10
@ Notes : 1. 250 µs Pulse Test 2. T = 25 oC C 10-1 10-1 100 101
- 55 oC 10-1
2
4
VDS , Drain-Source Voltage [V] [A]
VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
RDS(on) , [ ] Drain-Source On-Resistance
08 .
Fig 4. Source-Drain Diode Forward Voltage
11 0
06 .
V = 10 V GS
04 .
IDR , Reverse Drain Current
10 0
02 .
VGS = 20 V
1 5 oC 7 2 oC 5 1 -1 0 04 . 06 . 08 . 10 . 12 .
@ N t : TJ = 2 oC oe 5 00 . 0 5 10 15 2 0
@Nts: oe 1 VGS = 0 V . 2 2 0 µs P l e T s . 5 us et 14 . 16 . 18 . 20 .
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
30 5 Ciss= Cgs+ C ( Cds= s o t d ) hre gd Coss= Cds+ C gd
Fig 6. Gate Charge vs. Gate-Source Voltage
[V]
0 VDS = 2 V 1 0 VDS = 5 V 0 VDS = 8 V 0
[pF]
C iss
20 1
C oss
VGS , Gate-Source Voltage
20 8
Crss= Cgd
Capacitance
10 4 C rss 70
@Nts: oe 1 VGS = 0 V . 2 f=1Mz . H
5
@Nts:I =56A oe . D 0 0 2 4 6 8 1 0
00 10
1 10
VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
IRF510A
BVDSS , (Normalized) Drain-Source Breakdown Voltage
N-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
RDS(on) , (Normalized) Drain-Source On-Resistance
3.0
Fig 7. Breakdown Voltage vs. Temperature
1.2
2.5
1.1
2.0
1.0
1.5
1.0 @ Notes : 1. V = 10 V GS 2. I = 2.8 A D 0.0 -75
0.9
@ Notes : 1. V = 0 V GS 2. I = 250 µA D
0.5
0.8 -75
-50
-25
0
25
50
75
100
125
150
175
200
-50
-25
0
25
50
75
100
125
150
175
200
TJ , Junction Temperature [ oC]
TJ , Junction Temperature [ oC]
Fig 9. Max. Safe Operating Area
2 10
Fig 10. Max. Drain Current vs. Case Temperature
6
[A]
Operation in This Area is Limited by R DS(on) 100 µs 1 ms 10 ms DC
0 10
[A]
5
ID , Drain Current
1 10
ID , Drain Current
4
3
2
@ Notes : 1. T = 25 oC C 2. T = 175 oC J 3. Single Pulse 10-1 0 10
1 10
1
102
0 25
50
75
100
125
150
175
VDS , Drain-Source Voltage [V]
Tc , Case Temperature [ oC]
Fig 11. Thermal Response
Thermal Response
D=0.5 100 @ Notes : 1. Z J C (t)=4.51 3. TJ M -TC =PD M *Z
0.2 0.1 0.05
o
C/W Max. (t)
2. Duty Factor, D=t /t2 1
J C
Z JC(t) ,
10- 1
0.02 0.01
PDM
single pulse
t1 t2
10- 5
10- 4
10- 3
10- 2
10- 1
100
101
t 1 , Square Wave Pulse Duration
[sec]
N-CHANNEL POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
IRF510A
" Current Regulator "
50K 12V 200nF 300nF
Same Type as DUT
VGS Qg
10V
VDS VGS DUT
3mA
Qgs
Qgd
R1
Current Sampling (I G) Resistor
R2
Current Sampling (I D) Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL Vout Vin RG DUT 10V Vin
10%
Vout VDD
( 0.5 rated V DS )
90%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
LL VDS
Vary tp to obtain required peak ID
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp
ID
RG DUT 10V
tp
ID (t) VDS (t) Time
IRF510A
N-CHANNEL POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS --
IS L Driver RG VGS
Same Type as DUT
VGS
VDD
· dv/dt controlled by "RG" · IS controlled by Duty Factor "D"
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST® FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.)
IRF520A
BVDSS = 100 V RDS(on) = 0.2 ID = 9.2 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds
Value 100 9.2 6.5
1 O
2 O 1 O 1 O 3 O
Units V A A V mJ A mJ V/ns W W/ C
37 + 20 _ 113 9.2 4.5 6.5 45 0.3 - 55 to +175
C
300
Thermal Resistance
Symbol R JC R CS R JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 3.31 -62.5
Units
C /W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRF520A
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS BV/ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage TJBreakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units 100 -2.0 -----------------0.12 ------6.35 370 95 38 14 14 36 28 16 2.7 7.8 --4.0 100 -100 10 100 0.2 -480 110 45 40 40 90 70 22 --nC ns pF µ A V Test Condition VGS=0V,ID=250 µ A See Fig 7 V/ C ID=250µ A VDS=5V,ID=250 µ A V
nA
VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150 C VGS=10V,ID=4.6A VDS=40V,ID=4.6A
4 O 4 O
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=9.2A, RG=18 See Fig 13 VDS=80V,VGS=10V, ID=9.2A See Fig 6 & Fig 12
4 5 OO 4 5 OO
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O 4 O
Min. Typ. Max. Units --------98 0.34 9.2 37 1.5 --A V ns µ C
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=9.2A,VGS=0V TJ=25 C ,IF=9.2A diF/dt=100A/ µ s
4 O
1 O 2 O 3 O 4 O 5 O
Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature o L=2mH, IAS=9.2A, V DD=25V, R G=27 , Starting T J =25 C _ < 300A/µs, V DD < BVDSS , Starting T J =25 oC ISD < 9.2A, di/dt _ _ _ Pulse Test : Pulse Width = 250 µ Duty Cycle <2% s, Essentially Independent of Operating Temperature
N-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
VGS 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V
IRF520A
Fig 2. Transfer Characteristics
[A]
101
[A] ID , Drain Current
101
Top :
ID , Drain Current
175 oC 100 25 oC @ Notes : 1. V = 0 V GS 2. V = 40 V DS - 55 oC 3. 250 µs Pulse Test 6 8 10 10-1
10
0
@ Notes : 1. 250 µs Pulse Test 2. T = 25 oC C 10-1 100 101
2
4
VDS , Drain-Source Voltage [V] [A]
VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
RDS(on) , [ ] Drain-Source On-Resistance
04 .
Fig 4. Source-Drain Diode Forward Voltage
IDR , Reverse Drain Current
03 .
VGS = 10 V
11 0
02 .
10 0
01 .
V = 20 V GS
1 5 oC 7 2 oC 5 1 -1 0 04 . 06 . 08 . 10 . 12 . 14 .
@ N t : TJ = 2 C oe 5 00 . 0 10 20 30 4 0
o
@Nts: oe 1 VGS = 0 V . 2 2 0 µs P l e T s . 5 us et 16 . 18 . 20 . 22 .
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
60 0 C iss Ciss= Cgs+ C ( Cds= s o t d ) hre gd Coss= Cds+ C gd Crss= Cgd
Fig 6. Gate Charge vs. Gate-Source Voltage
[V]
VDS = 2 V 0 1 0 V =5 V 0 DS V =8 V 0 DS
[pF]
Capacitance
40 0 C oss
VGS , Gate-Source Voltage
20 0 C rss
@Nts: oe 1 VGS = 0 V . 2 f=1Mz . H
5
@Nts:I =92A oe . D 0 0 5 1 0 1 5 2 0
00 10
10
1
VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
IRF520A
BVDSS , (Normalized) Drain-Source Breakdown Voltage
N-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
RDS(on) , (Normalized) Drain-Source On-Resistance
3.0
Fig 7. Breakdown Voltage vs. Temperature
1.2
2.5
1.1
2.0
1.0
1.5
1.0 @ Notes : 1. V = 10 V GS 2. I = 4.6 A D
0.9
@ Notes : 1. V = 0 V GS 2. I = 250 µA D
0.5
0.8 -75
-50
-25
0
25
50
75
100
TJ , Junction Temperature [ C]
125 o
150
175
200
0.0 -75
-50
-25
0
25
50
75
100
125
150
175
200
TJ , Junction Temperature [ oC]
Fig 9. Max. Safe Operating Area
[A]
2 10
Fig 10. Max. Drain Current vs. Case Temperature
10
Operation in This Area is Limited by R DS(on)
[A]
100 µs 1 ms 10 ms
ID , Drain Current
1 10
ID , Drain Current
102
8
6
DC
0 10
4
@ Notes : 1. T = 25 oC C 2. T = 175 oC J 3. Single Pulse
2
10-1 0 10
1 10
0 25
50
75
100
125
150
175
VDS , Drain-Source Voltage [V]
Tc , Case Temperature [ oC]
Fig 11. Thermal Response
Thermal Response
D=0.5 100 0.2 0.1 0.05 @ Notes : 1. Z J C (t)=3.31
o C/W
Max.
2. Duty Factor, D=t /t2 1 3. TJ M -TC =PD M *Z J C (t)
ZJC(t) ,
10- 1
0.02 0.01 single pulse
PDM t1 t2
10- 5
10- 4
10- 3
10- 2
10- 1
100
101
t 1 , Square Wave Pulse Duration
[sec]
N-CHANNEL POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
IRF520A
" Current Regulator "
50K 12V 200nF 300nF
Same Type as DUT
VGS Qg
10V
VDS VGS DUT
3mA
Qgs
Qgd
R1
Current Sampling (I G) Resistor
R2
Current Sampling (I D) Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL Vout Vin RG DUT 10V Vin
10%
Vout VDD
( 0.5 rated V DS )
90%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
LL VDS
Vary tp to obtain required peak ID
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp
ID
RG DUT 10V
tp
ID (t) VDS (t) Time
IRF520A
N-CHANNEL POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS --
IS L Driver RG VGS
Same Type as DUT
VGS
VDD
· dv/dt controlled by "RG" · IS controlled by Duty Factor "D"
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST® FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 (Typ.)
IRF530A
BVDSS = 100 V RDS(on) = 0.11 ID = 14 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C)
Value 100 14 9.9
1 O
Units V A A V mJ A mJ V/ns W W/ C
Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C )
56 + 20 _ 261 14 5.5 6.5 55 0.36 - 55 to +175
O 1 O 1 O 3 O
2
Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds
C
300
Thermal Resistance
Symbol R JC R CS R JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 2.74 -62.5
Units
C /W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRF530A
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS BV/ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units 100 -2.0 -----------------0.11 ------10.25 610 150 62 13 14 55 36 27 4.5 12.8 --4.0 100 -100 10 100 0.11 -790 175 72 40 40 110 80 36 --nC ns pF µA V
Test Condition VGS=0V,ID=250 µA See Fig 7 VDS=5V,ID=250 µA
V/ C ID=250 µA V nA VGS=20V VGS=-20V VDS=100V
VDS=80V,TC=150 C VGS=10V,ID=7A VDS=40V,ID=7A
4 O 4 O
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=14A, RG=12 See Fig 13 VDS=80V,VGS=10V, ID=14A See Fig 6 & Fig 12
4 5 OO 4 5 OO
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O
4 O
Min. Typ. Max. Units --------109 0.41 14 56 1.5 --A V ns ¥ìC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=14A,VGS=0V TJ=25 C ,IF=14A diF/dt=100A/ µs
4 O
Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 O L=2mH, I AS=14A, VDD=25V, RG=27 , Starting T J =25 oCo 3 _ _ _ O ISD < 14A, di/dt < 350A/µs, VDD< BVDSS , Starting T J =25 C _ s, 4 O Pulse Test : Pulse Width = 250 µ Duty Cycle <2% 5 Essentially Independent of Operating Temperature O
N-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
VGS 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V
IRF530A
Fig 2. Transfer Characteristics
[A] ID , Drain Current
101
ID , Drain Current
[A]
101
Top :
175 oC 100 25 oC @ Notes : 1. V = 0 V GS - 55 oC 2. V = 40 V DS 3. 250 µs Pulse Test 6 8 10
10
0
@ Notes : 1. 250 µs Pulse Test 2. T = 25 oC C 100 101
10-1
10-1
2
4
VDS , Drain-Source Voltage [V] [A]
VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
RDS(on) , [ ] Drain-Source On-Resistance
02 .0
Fig 4. Source-Drain Diode Forward Voltage
01 .5
VGS = 10 V
IDR , Reverse Drain Current
11 0
01 .0
VGS = 20 V 00 .5 @ N t : TJ = 2 oC oe 5 00 .0 0 15 30 45 6 0
10 0 @Nts: oe 1 VGS = 0 V . 2 2 0 µs P l e T s . 5 us et 08 . 10 . 12 . 14 . 16 . 18 . 20 . 22 .
1 5 oC 7 2 oC 5 1 -1 0 04 . 06 .
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
10 00 C iss 70 5 Ciss= Cgs+ C ( Cds= s o t d ) hre gd Coss= Cds+ C gd Crss= Cgd
Fig 6. Gate Charge vs. Gate-Source Voltage
[V]
VDS = 2 V 0 1 0 V =5 V 0 DS VDS = 8 V 0
[pF]
C oss 50 0 @Nts: oe 1 VGS = 0 V . 2 f=1Mz . H
VGS , Gate-Source Voltage
Capacitance
5
C rss 20 5
@ N t s : ID = 1 . A oe 40 0 0 5 1 0 1 5 2 0 2 5 3 0
00 10
1 10
VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
IRF530A
BVDSS , (Normalized) Drain-Source Breakdown Voltage
N-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
RDS(on) , (Normalized) Drain-Source On-Resistance
3.0
Fig 7. Breakdown Voltage vs. Temperature
1.2
2.5
1.1
2.0
1.0
1.5
1.0 @ Notes : 1. V = 10 V GS 2. I = 7.0 A D
0.9
@ Notes : 1. V = 0 V GS 2. I = 250 µA D
0.5
0.8 -75
-50
-25
0
25
50
75
100
125
150
175
200
0.0 -75
-50
-25
0
25
50
75
100
125
150
175
200
TJ , Junction Temperature [ oC]
TJ , Junction Temperature [ oC]
Fig 9. Max. Safe Operating Area
[A]
2 10
Fig 10. Max. Drain Current vs. Case Temperature
15
Operation in This Area is Limited by R DS(on) 10 µs 100 µs 1 ms 10 ms DC
[A] ID , Drain Current
12 9 6 3 102 0 25
ID , Drain Current
1 10
10
0
@ Notes : 1. T = 25 oC C 2. T = 175 oC J 3. Single Pulse
10-1 0 10
1 10
50
75
100
125
150
175
VDS , Drain-Source Voltage [V]
Tc , Case Temperature [ oC]
Fig 11. Thermal Response
Thermal Response
D=0.5 100 0.2 0.1 0.05 10- 1 0.02 0.01 single pulse @ Notes : 1. Z J C (t)=2.74
o C/W
Max.
2. Duty Factor, D=t /t2 1 3. TJ M -TC =PD M *Z J C (t)
Z JC(t) ,
PDM t1 t2
10- 5
10- 4
10- 3
10- 2
10- 1
100
101
t 1 , Square Wave Pulse Duration
[sec]
N-CHANNEL POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
IRF530A
" Current Regulator "
50K 12V 200nF 300nF
Same Type as DUT
VGS Qg
10V
VDS VGS DUT
3mA
Qgs
Qgd
R1
Current Sampling (I G) Resistor
R2
Current Sampling (I D) Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL Vout Vin RG DUT 10V Vin
10%
Vout VDD
( 0.5 rated V DS )
90%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
LL VDS
Vary tp to obtain required peak ID
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp
ID
RG DUT 10V
tp
ID (t) VDS (t) Time
IRF530A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
N-CHANNEL POWER MOSFET
DUT
+ VDS --
IS L Driver RG VGS
Same Type as DUT
VGS
VDD
· dv/dt controlled by "RG" · IS controlled by Duty Factor "D"
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST® FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 (Typ.)
IRF540A
BVDSS = 100 V RDS(on) = 0.052 ID = 28 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C)
Value 100 28 19.8
1 O
Units V A A V mJ A mJ V/ns W W/ C
Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C )
110 + 20 _ 523 28 10.7 6.5 107 0.71 - 55 to +175
O 1 O 1 O 3 O
2
Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds
C
300
Thermal Resistance
Symbol R JC R CS R JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 1.4 -62.5
Units
C /W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRF540A
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS BV/ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units 100 -2.0 -----------------0.11 ------22.56 325 148 18 18 90 56 60 10.8 27.9 --4.0 100 -100 10 100 0.052 -380 170 50 50 180 120 78 --nC ns µA pF V V C V nA
Test Condition VGS=0V,ID=250 µ A ID=250 µ A See Fig 7 VDS=5V,ID=250 µA VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150 C VGS=10V,ID=14A VDS=40V,ID=14A
4 O 4 O
1320 1710
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=28A, RG=9.1 See Fig 13 VDS=80V,VGS=10V, ID=28A See Fig 6 & Fig 12
4 5 OO 4 5 OO
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O
4 O
Min. Typ. Max. Units --------132 0.63 28 110 1.5 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=28A,VGS=0V TJ=25 C ,IF=28A diF/dt=100A/ µs
4 O
Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 O L=1mH, I AS=28A, VDD=25V, RG=27 , Starting T J =25 oCo 3 _ _ _ O ISD < 28A, di/dt < 400A/ µs, V DD< BVDSS , Starting T J =25 C _ s, 4 O Pulse Test : Pulse Width = 250 µ Duty Cycle <2% 5 Essentially Independent of Operating Temperature O
N-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
102
VGS 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V
IRF540A
Fig 2. Transfer Characteristics
102
[A]
ID , Drain Current
ID , Drain Current
[A]
Top :
175 oC
101
101 25 oC @ Notes : 1. V = 0 V GS 2. V = 40 V DS 3. 250 µs Pulse Test
100 10-1 100
@ Notes : 1. 250 µs Pulse Test 2. T = 25 oC C 101
- 55 oC
100
2
4
6
8
10
VDS , Drain-Source Voltage [V] [A]
VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
RDS(on) , [ ] Drain-Source On-Resistance
00 .8
Fig 4. Source-Drain Diode Forward Voltage
12 0
00 .6
VGS = 10 V
00 .4
IDR , Reverse Drain Current
11 0
VGS = 20 V 00 .2 = 2 oC 5 10 2
1 5 oC 7 2 oC 5 10 0 04 .
@Nts: oe 1 VGS = 0 V . 2 2 0 µs P l e T s . 5 us et 10 . 12 . 14 . 16 . 18 . 20 . 22 . 24 .
@ N t : TJ oe 00 .0 0 30 60 90
06 .
08 .
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
20 50 Ciss= Cgs+ C ( Cds= s o t d ) hre gd Coss= Cds+ C gd
Fig 6. Gate Charge vs. Gate-Source Voltage
[V]
[pF]
VGS , Gate-Source Voltage
20 00 C iss 10 50 C oss 10 00 C rss 50 0
Crss= Cgd
1 0
VDS = 2 V 0 0 VDS = 5 V VDS = 8 V 0
Capacitance
@Nts: oe 1 VGS = 0 V . 2 f=1Mz . H
5
@ N t s : ID = 8 0 A oe 2. 0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0
00 10
1 10
VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
IRF540A
BVDSS , (Normalized) Drain-Source Breakdown Voltage
N-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
RDS(on) , (Normalized) Drain-Source On-Resistance
3.0
Fig 7. Breakdown Voltage vs. Temperature
1.2
2.5
1.1
2.0
1.0
1.5
1.0 @ Notes : 1. V = 10 V GS 2. I = 14.0 A D
0.9
@ Notes : 1. V = 0 V GS 2. I = 250 µA D
0.5
0.8 -75
-50
-25
0
25
50
75
100
125
150
175
200
0.0 -75
-50
-25
0
25
50
75
100
125
150
175
200
TJ , Junction Temperature [ oC]
TJ , Junction Temperature [ oC]
Fig 9. Max. Safe Operating Area
3 10
Fig 10. Max. Drain Current vs. Case Temperature
30
[A]
Operation in This Area is Limited by R DS(on)
2 10
[A]
25 10 µs 100 µs 1 ms 10 ms DC
ID , Drain Current
ID , Drain Current
20
1 10
15
10
0 10
@ Notes : 1. T = 25 oC C 2. T = 175 oC J 3. Single Pulse
5
10-1 0 10
1 10
102
0 25
50
75
100
125
150
175
VDS , Drain-Source Voltage [V]
Tc , Case Temperature [ oC]
Fig 11. Thermal Response
Thermal Response
100 D=0.5 @ Notes : 1. Z J C (t)=1.4 o C/W Max. 2. Duty Factor, D=t /t2 1 3. TJ M -TC =PD M *Z J C (t) 0.05 0.02 0.01 single pulse
0.2 0.1 10- 1
Z JC(t) ,
PDM t1 t2
10- 2 10- 5
10- 4
10- 3
10- 2
10- 1
100
101
t 1 , Square Wave Pulse Duration
[sec]
N-CHANNEL POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
IRF540A
" Current Regulator "
50K 12V 200nF 300nF
Same Type as DUT
VGS Qg
10V
VDS VGS DUT
3mA
Qgs
Qgd
R1
Current Sampling (I G) Resistor
R2
Current Sampling (I D) Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL Vout Vin RG DUT 10V Vin
10%
Vout VDD
( 0.5 rated V DS )
90%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
LL VDS
Vary tp to obtain required peak ID
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp
ID
RG DUT 10V
tp
ID (t) VDS (t) Time
IRF540A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
N-CHANNEL POWER MOSFET
DUT
+ VDS --
IS L Driver RG VGS
Same Type as DUT
VGS
VDD
· dv/dt controlled by "RG" · IS controlled by Duty Factor "D"
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST® FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 (Typ.)
IRF550A
BVDSS = 100 V RDS(on) = 0.04 ID = 40 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C)
Value 100 40 28.3
1 O
Units V A A V mJ A mJ V/ns W W/ C
Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C)
160 + 20 _ 640 40 16.7 6.5 167 1.11 - 55 to +175
O 1 O 1 O 3 O
2
Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds
C
300
Thermal Resistance
Symbol R JC R CS R JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 0.9 -62.5
Units
C /W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRF550A
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS BV/ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units 100 -2.0 -----------------0.11 ------27.44 420 185 17 20 80 45 75 13.2 34.8 --4.0 100 -100 10 100 0.04 -485 215 50 50 160 100 97 --nC ns µA pF V V/ C V nA
Test Condition VGS=0V,ID=250 µA ID=250µ A See Fig 7 VDS=5V,ID=250 µA VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150 C VGS=10V,ID=20A VDS=40V,ID=20A
4 O 4 O
1750 2270
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=40A, RG=6.2 See Fig 13 VDS=80V,VGS=10V, ID=40A See Fig 6 & Fig 12
4 5 OO 4 5 OO
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O
4 O
Min. Typ. Max. Units --------135 0.65 40 160 1.6 --A V ns µC
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C ,IS=40A,VGS=0V TJ=25 C ,IF=40A diF/dt=100A/ µs
4 O
Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O 2 O L=0.6mH, I AS=40A, VDD=25V, RG=27 , Starting T J =25ooC 3 _ _ _ O ISD < 40A, di/dt < 470A/ µs, VDD< BVDSS , Starting T J =25 C _ s, 4 O Pulse Test : Pulse Width = 250 µ Duty Cycle <2% 5 Essentially Independent of Operating Temperature O
N-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
[A] [A]
102
VGS Top : 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V
IRF550A
Fig 2. Transfer Characteristics
102
ID , Drain Current
ID , Drain Current
175 oC
10
1
101 25 oC @ Notes : 1. V = 0 V GS 2. V = 40 V DS 3. 250 µs Pulse Test 6 8 10
100
@ Notes : 1. 250 µs Pulse Test 2. T = 25 oC C 100 101
- 55 oC 100
10-1
2
4
VDS , Drain-Source Voltage [V] [A]
VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
RDS(on) , [ ] Drain-Source On-Resistance
00 .6
Fig 4. Source-Drain Diode Forward Voltage
12 0
00 .5
VGS = 10 V
00 .4
00 .3 V = 20 V GS
IDR , Reverse Drain Current
11 0
00 .2
00 .1 @ N t : TJ = 2 oC oe 5 00 .0 0 25 50 75 10 0 15 2 10 5 15 7
1 5 oC 7 2 C 5 10 0 04 . 06 . 08 . 10 12 . . 14 . 16 .
o
@Nts: oe 1 VGS = 0 V . 2 2 0 µs P l e T s . 5 us et 18 . 20 . 22 . 24 26 . . 28 .
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
30 00 Ciss= Cgs+ C ( Cds= s o t d ) hre gd Coss= Cds+ C gd Crss= Cgd
Fig 6. Gate Charge vs. Gate-Source Voltage
[V]
VDS = 2 V 0 0 V =5 V DS VDS = 8 V 0
[pF]
Capacitance
20 00 C oss @Nts: oe 1 VGS = 0 V . 2 f=1Mz . H
VGS , Gate-Source Voltage
C iss
1 0
5
10 00
C rss
@Nts:I =00A oe D 4. 0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0
00 10
1 10
VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
IRF550A
BVDSS , (Normalized) Drain-Source Breakdown Voltage
N-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
RDS(on) , (Normalized) Drain-Source On-Resistance
3.0
Fig 7. Breakdown Voltage vs. Temperature
1.2
2.5
1.1
2.0
1.0
1.5
1.0 @ Notes : 1. V = 10 V GS 2. I = 20.0 A D
0.9
@ Notes : 1. V = 0 V GS 2. I = 250 µA D
0.5
0.8 -75
-50
-25
0
25
50
75
100
125
150
175
200
0.0 -75
-50
-25
0
25
50
75
100
125
150
175
200
TJ , Junction Temperature [ oC]
TJ , Junction Temperature [ oC]
Fig 9. Max. Safe Operating Area
3 10
Fig 10. Max. Drain Current vs. Case Temperature
50
[A]
Operation in This Area is Limited by R DS(on)
2 10
[A]
100 µs 1 ms 10 ms
ID , Drain Current
ID , Drain Current
10 µs
40
30
1 10
DC
20
0 10
@ Notes : 1. T = 25 oC C 2. T = 175 oC J 3. Single Pulse
10
10-1 0 10
1 10
102
0 25
50
75
100
125
150
175
VDS , Drain-Source Voltage [V]
Tc , Case Temperature [ oC]
Fig 11. Thermal Response
Thermal Response
100 D=0.5 0.2 10- 1 0.1 0.05 0.02 0.01 10- 2 10- 5 10- 4 10- 3 10- 2 10- 1 100 101 @ Notes : 1. Z J C (t)=0.9 o C/W Max. 2. Duty Factor, D=t /t2 1 3. TJ M -TC =PD M *Z J C (t)
Z JC(t) ,
PDM
single pulse
t1 t2
t 1 , Square Wave Pulse Duration
[sec]
N-CHANNEL POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
IRF550A
" Current Regulator "
50K 12V 200nF 300nF
Same Type as DUT
VGS Qg
10V
VDS VGS DUT
3mA
Qgs
Qgd
R1
Current Sampling (I G) Resistor
R2
Current Sampling (I D) Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL Vout Vin RG DUT 10V Vin
10%
Vout VDD
( 0.5 rated V DS )
90%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
LL VDS
Vary tp to obtain required peak ID
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp
ID
RG DUT 10V
tp
ID (t) VDS (t) Time
IRF550A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
N-CHANNEL POWER MOSFET
DUT
+ VDS --
IS L Driver RG VGS
Same Type as DUT
VGS
VDD
· dv/dt controlled by "RG" · IS controlled by Duty Factor "D"
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 1.169 (Typ.)
1 2 3
IRF610A
BVDSS = 200 V RDS(on) = 1.5 ID = 3.3 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Co