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TDA8178S
TV VERTICAL DEFLECTION BOOSTER
. . . .
POWER AMPLIFIER FLYBACK GENERATOR THERMAL PROTECTION REFERENCE VOLTAGE
DESCRIPTION Designed for monitors and high performance TVs, the TDA8178S vertical deflection booster delivers flyback voltages up to 90V. The TDA8178S operates with supplies up to 42V and provides up to 2App output current to drive to yoke. The TDA8178Sis offered in HEPTAWATT package PIN CONNECTIONS
HEPTAWATT (Plastic Package) ORDER CODE : TDA8178S
7 6 5 4 3 2 1
Reference Voltage Output Stage Supply Output GND Flyback Generator Supply Voltage Inverting Input
Tab connected to pin 4
8178S-01.EPS
May 1993
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TDA8178S
BLOCK DIAGRAM
+ VS
2
6
3 FLYBACK GENERATOR
1
POWER AMPLIFIER
5 YOKE
7 REFERENCE VOLTAGE 4 THERMAL PROTECTION
APPLICATION CIRCUIT (VS = 42V)
+ VS
2
6
3
1
TDA8178S
5
7 YOKE
4
Note : For values see "Easy Design of Vertical Deflection Stages" (software available from our sales offices)
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8178S-03.EPS
8178S-02.EPS
TDA8178S
ABSOLUTE MAXIMUM RATINGS
Symbol VS V5 , V6 V1 , V7 IO Supply Voltage (pin 2) Flyback Peak Voltage Amplifier Input Voltage Output Peak Current Non-repetitive, t = 2ms f = 50 or 60Hz, t 10µs f = 50 or 60Hz, t > 10µs I3 Ptot Tstg Tj Pin 3 DC at V5 < V2 Pin 3 Peak Flyback Current at f = 50 or 60Hz, tfly 1.5ms Total Power Dissipation at TC = 70 C Storage Temperature Junction Temperature
o
Parameter
Value 50 100 + VS
Unit V V A
2 2 1.8 100 1.8 20 - 40, + 150 0, +150 mA A
o o
C C
THERMAL DATA
Symbol Rth (j-c) Parameter Junction-case Thermal Resistance Max. Value 3 Unit
o
C/W
ELECTRICAL CHARACTERISTICS (VS = 42V, TA = 25oC, unless otherwise specified) (refer to the test circuits - see Figure 1 next page)
Symbol VS I2 I6 I1 V3L V5 Parameter Operating Supply Voltage Range Pin 2 Quiescent Current Pin 6 Quiescent Current Amplifier Bias Current Pin 3 Saturation to GND Quiescent Output Voltage VS = 42V VS = 35V V5L V5H VD5 - 6 VD3 - 2 V7 V7/VS KT Output Saturation Voltage to GND Output Saturation Voltage to Supply Diode Forward Voltage between Pins 5-6 Diode Forward Voltage between Pins 3-2 Internal Reference Reference Voltage Drift versus VS Reference Voltage Drift versus Tj VS = 24 to 42V Tj = 0 to 125 C 6 V7 10 KT = Tj V7
o
Test Conditions I3 = 0 I3 = 0 V1 = 1V I3 = 20mA Ra = 3.9k Ra = 5.6k I5 = 0 I5 = 0
Min. 10
Typ. 10 20 - 0.2 1.3
Max. 42 20 40 -1 1.8 25 18.5 1.5 2.6 3 3 2.3 4 150
Unit V mA mA µA V V
23.4 17
24.2 17.8 1.2 2.2 1.5 1.5
I5 = 1A - I5 = 1A ID = 1A ID = 1A 2.1
V V V V V mV/V ppm/ C
o
2.2 2 100
R1 Tj
Input Resistance Junction Temperature for Thermal Shutdown
200 140
k
o
C
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8178S-03.TBL
8178S-02.TBL
8178S-01.TBL
W
TDA8178S
FIGURE 1 : DC Test Circuits Figure 1a : Measurement of I1, I2, I6, V7, V7/VS
+ VS I2 I6
Figure 1b : Measurement of V5H
+ VS
2
6
V5H 2
5
6
TDA8178S
S1 1
10k
1
a b
TDA8178S
5
7
4 I1 V7 1V
8178S-04.EPS
4
- I5
1V
8178S-05.EPS
S1 : (a) I2 and I6, (b) I1
Figure 1c : Measurement of V3L, V5L
+ VS
Figure 1d : Measurement of V5
+ VS
I 3 or I
5
2
6
2
6
S1 3 a b
1
TDA8178S
5
1
TDA8178S
5
4
4
39k
V5
V 3L 3V
V 5L
Re
8178S-06.EPS 8178S-07.EPS
S1 : (a)V3L, (b) V5L
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TDA8178S
Figure 2 : SOA of Each Output Power Transistor at TA = 25oC
10 I C (A)
I C max. pulsed 2 1.2 1 I C max. continued
Pulse Operation*
1ms 10ms
10
-1
DC Operation
10
-2
1
10
10
2
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8178S-08.EPS
* For single non repetitive pulse
VCE (V)
TDA8178S
PACKAGE MECHANICAL DATA : HEPTAWATT
L E L1 M1 A C D1 L2 L5 L3 G1 H3 Dia. G2 G M D
L6
Dimensions Min. A C D D1 E F F1 G G1 G2 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia.
Millimeters Typ.
H2
L7
2.4 1.2 0.35 0.6 2.41 4.91 7.49 10.05 16.97 14.92 21.54 22.62 2.6 15.1 6 2.8 5.08 3.65 2.54 5.08 7.62
Max. 4.8 1.37 2.8 1.35 0.55 08 0.9 2.67 5.21 7.8 10.4 10.4
Min.
Inches Typ.
0.094 0.047 0.014 0.024 0.095 0.193 0.295 0.396 0.668 0.587 0.848 0.891 0.100 0.200 0.300
Max. 0.189 0.054 0.110 0.053 0.022 0.031 0.035 0.105 0.205 0.307 0.409 0.409
3 15.8 6.6
0.102 0.594 0.236 0.110 0.200
0.118 0.622 0.260
HEPTV.TBL
3.85
0.144
0.152
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved Purchase of I C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips I2C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to the I2C Standard Specifications as defined by Philips. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
2
6/6
PM-HEPTV.EPS
F1
F