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19-5635; Rev 11/10
DS1230Y/AB
256k Nonvolatile SRAM
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FEATURES PIN ASSIGNMENT
10 years minimum data retention in the A14 1 28 VCC
absence of external power A12 2 27 WE
Data is automatically protected during power A7 3 26 A13
A6 4 25 A8
loss A5 5 24 A9
Replaces 32k x 8 volatile static RAM, A4 6 23 A11
EEPROM or Flash memory A3 7 22 OE
Unlimited write cycles A2 8 21 A10
A1 9 20 CE
Low-power CMOS A0 10 19 DQ7
Read and write access times of 70 ns DQ0 11 18 DQ6
Lithium energy source is electrically DQ1
12 17
DQ5
13 16
disconnected to retain freshness until power is DQ2 DQ4
GND 14 15 DQ3
applied for the first time
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