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AO4601
Complementary Enhancement Mode Field Effect Transistor

General Description Features
n-channel p-channel
The AO4601 uses advanced trench technology VDS (V) = 30V -30V
MOSFETs to provide excellent RDS(ON) and low ID = 4.7A (VGS=10V) -8A (VGS = -20V)
gate charge. The complementary MOSFETs may RDS(ON) RDS(ON)
be used to form a level shifted high side switch, < 55m (VGS=10V) < 18m (VGS = -20V)
and for a host of other applications. Standard < 70m (VGS=4.5V) < 19m (VGS = -10V)
Product AO4601 is Pb-free (meets ROHS & Sony
< 110m (VGS = 2.5V)
259 specifications). AO4601L is a Green Product
ordering option. AO4601 and AO4601L are

D2 D1

S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1 G2 G1
S2 S1
SOIC-8
n-channel p-channel

Absolute Maximum Ratings TA=25