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2SK1165, 2SK1166
Silicon N-Channel MOS FET

ADE-208-1252 (Z) 1st. Edition Mar. 2001 Application
High speed power switching

Features
· · · · · Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter

Outline

TO-3P

D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source

S

2SK1165, 2SK1166
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1165 2SK1166 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1

Symbol VDSS

Ratings 450 500 ±30 12 48 12 100 150 ­55 to +150

Unit V

V A A A W °C °C

2

2SK1165, 2SK1166
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Symbol Min 2SK1165 V(BR)DSS 2SK1166 V(BR)GSS I GSS 450 500 ±30 -- -- -- -- -- -- ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 -- -- |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 6.0 -- -- -- -- -- -- -- -- -- -- 0.40 0.45 10 1450 410 55 20 70 120 60 1.0 450 3.0 0.55 0.60 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns I F = 12 A, VGS = 0 I F = 12 A, VGS = 0, diF/dt = 100 A/µs I D = 6 A, VGS = 10 V, RL = 5 I D = 6 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V I D = 1 mA, VDS = 10 V I D = 6 A, VGS = 10 V *1 Typ -- Max -- Unit V Test conditions I D = 10 mA, VGS = 0

Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current

2SK1165 I DSS 2SK1166

Gate to source cutoff voltage

Static Drain to source 2SK1165 RDS(on) on state resistance 2SK1166

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test

3

2SK1165, 2SK1166
Power vs. Temperature Derating 120 Channel Dissipation Pch (W) 100 30 Drain Current ID (A) 80 10 3 1.0 0.3 0.1 0 50 100 Case Temperature TC (°C) 150 1 Ta = 25°C
10

Maximum Safe Operation Area
10
0 µs

O is per Lim at ite ion d in by th R is A DS re (o a n

µs

D

C

PW

)

1
= 10

m

O

s

pe

ra

40

tio s (1 n (T sho t) C = 25 °C

m

)

2SK1166 2SK1165

3 30 10 100 300 1,000 Drain to Source Voltage VDS (V)

Typical Output Characteristics 20 20 10 V 6V 16 Drain Current ID (A) 8V 5.5 V Drain Current ID (A) 16

Typical Transfer Characteristics

VDS = 20 V Pulse Test

12

5.0 V

12

8 4.5 V 4 VGS = 4 V 0 20 10 30 40 Drain to Source Voltage VDS (V) 50

8 75°C ­25°C TC = 25°C

4

0

4 2 6 8 Gate to Source Voltage VGS (V)

10

4

2SK1165, 2SK1166
Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test 15 A Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) () 5 Pulse Test VGS = 10 V

8

2 1.0 0.5

6 10 A 4 ID = 5 A 2

15 V

0.2 0.1 0.05 0.5

0

8 4 12 16 Gate to Source Voltage VGS (V)

20

1.0

10 5 20 2 Drain Current ID (A)

50

Static Drain to Source on State Resistance RDS (on) ()

Static Drain to Source on State Resistance vs. Temperature VGS = 10 V Pulse Test 0.8 15 A 10 A ID = 5 A 0.6 Forward Transfer Admittance yfs (S) 1.0 50

Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test

­25°C TC = 25°C 75°C

20 10 5

0.4

2 1.0 0.5 0.2

0.2

0 ­40

40 0 80 120 Case Temperature TC (°C)

160

0.5

2 10 5 1.0 Drain Current ID (A)

20

5

2SK1165, 2SK1166
Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time trr (ns) 2,000 1,000 500 200 100 Crss 50 0.2 10 0.5 1.0 2 5 10 Reverse Drain Current IDR (A) 20 0 10 30 40 20 Drain to Source Voltage VDS (V) 50 di/dt = 100 A/µs, Ta = 25°C VGS = 0 V Pulse Test 10,000 VGS = 0 f = 1 MHz Capacitance C (pF) Ciss 1,000 Typical Capacitance vs. Drain to Source Voltage

Coss 100

Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) VDD = 100 V 250 V 400 V VGS 12 20 Gate to Source Voltage VGS (V)

Switching Characteristics 500 VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1%
· ·

VDS

Switching Time t (ns)

400

16

200 100 50

td (off) tr tf td (on)

300

200 VDD = 400 V 250 V 100 V

ID = 12 A

8

20 10 5 0.5

100

4

0 0 40 20 60 80 Gate Charge Qg (nc) 100

1.0

10 2 5 20 Drain Current ID (A)

50

6

2SK1165, 2SK1166
Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) Pulse Test

16

12

8 5, 10 V VGS = 0, ­10 V

4

0

0.4 1.2 1.6 0.8 2.0 Source to Drain Voltage VSD (V)

Normalized Transient Thermal Impedance S (t)

Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25°C 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01
ho

ch­c (t) = S (t) · ch­c ch­c = 1.25°C/W, TC = 25°C PDM PW 1 D = PW T

0.03

1S 0.01 10 µ

lse t Pu

T 100 µ 1m 10 m Pulse Width PW (s) 100 m

10

Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vin Vout 50 Vin = 10 V . VDD = 30 V . td (on) 90 % tr 90 % td (off) tf 10 % 10 % 10 % Wavewforms 90 %

7

2SK1165, 2SK1166
Package Dimensions As of January, 2001
5.0 ± 0.3 15.6 ± 0.3 1.0
3.2 ± 0.2

4.8 ± 0.2 1.5

Unit: mm

0.5

14.9 ± 0.2

19.9 ± 0.2

1.6 1.4 Max 2.0 2.8 18.0 ± 0.5

1.0 ± 0.2

2.0

0.6 ± 0.2

3.6

0.9 1.0

5.45 ± 0.5

5.45 ± 0.5
Hitachi Code JEDEC EIAJ Mass (reference value) TO-3P -- Conforms 5.0 g

8

0.3

2SK1165, 2SK1166
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.

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