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OPTOCOUPLERS
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6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
DESCRIPTION
The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
PACKAGE DIMENSIONS
FEATURES
· Input/Output pin distance 10.16 mm · UL recognized (File # E90700)
0.270 (6.86) 0.240 (6.10)
APPLICATIONS
· Power supply regulators · Digital logic inputs · Microprocessor inputs
SCHEMATIC
1 NC 6 1
6 1
SEATING PLANE
0.350 (8.89) 0.330 (8.38) 0.070 (1.78) 0.045 (1.14)
6
0.200 (5.08) 0.115 (2.92)
2
5
2
5
0.154 (3.90) 0.100 (2.54)
0.004 (0.10) MIN
0.016 (0.40) 0.008 (0.20)
3
NC CNX82A.W SL5582.W
4
3
NC CNX83A.W SL5583.W
4
0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0° to 15° 0.400 (10.16) TYP
PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. NO CONNECTION
PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE
NOTE All dimensions are in inches (millimeters)
ABSOLUTE MAXIMUM RATINGS
Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C EMITTER DC/Average Forward Input Current Reverse Input Voltage Forward Current - Peak (1µs pulse, 300pps) LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage Collector-Base Voltage (CNX83A.W AND SL5583.W) Emitter-Collector Voltage Continuous Collector Current Detector Power Dissipation @ TA = 25°C Derate above 25°C Symbol TSTG TOPR TSOL PD IF VR IF(pk) PD VCEO VCBO VECO IC PD Value -55 to +150 -55 to +100 260 for 10 sec 250 100 5.0 3.0 140 1.33 50 70 7 100 150 2.0 Units °C °C °C mW mA V A mW mW/°C V V V mA mW mW/°C
2/29/00
200024C
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
ELECTRICAL CHARACTERISTICS
(TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter EMITTER Input Forward Voltage Reverse Leakage Current DETECTOR Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage (CNX83A.W only) Emitter-Collector Breakdown Voltage Test Conditions (IF = 10 mA) (VR = 5.0 V) (IC = 1.0 mA, IF = 0) (IC = 100 µA, IF = 0) (IE = 100 µA, IF = 0) (VCE = 10 V, IF = 0) (VCE = 10 V, IF = 0) Collector-Emitter Dark Current (TA = 70°C) (VCE = 10 V, IF = 0) (TA = 100°C) Collector-Base Dark Current Capacitance Note ** Typical values at TA = 25°C (VCB = 10 V) (VCE = 0 V, f = 1 MHz) ICBO CCE ICEO Symbol VF IR BVCEO BVCBO BVECO Device ALL ALL ALL ALL ALL ALL CNX82A.W CNX83A.W SL5582.W SL5583.W SL5582.W SL5583.W CNX83A.W SL5583.W ALL 8 50 70 7 Min Typ** 1.2 0.001 100 120 10 0.001 0.5 0.050 10 0.5 50 20 nA pF µA Max 1.50 10 Unit V µA V V V
Call QT Optoelectronics for more information or the phone number of your nearest distributor.
United States 800-533-6786 · France 33 [0] 1.45.18.78.78 · Germany 49 [0] 89/96.30.51 · United Kingdom 44 [0] 1296 394499 · Asia/Pacific 603-7352417
2/29/00
200024C
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
TRANSFER CHARACTERISTICS
DC Characteristic (TA = 25°C Unless otherwise specified.) Test Conditions (IF = 10 mA, VCE = 0.4 V) Symbol Device ALL CNX82A.W (IF = 10 mA, VCE = 5 V) CNX83A.W SL5582.W SL5583.W Current Transfer Ratio, Collector-Emitter (IF = 10 mA, VCE = 5 V) (TA = 100°C) (IF = 1 mA, VCE = 5 V) (IF = 2 mA, VCE = 5 V) (IF = 2 mA, VCE = 5 V) (TA = 100°C) Saturation Voltage (IF = 10 mA, IC = 4 mA) (IC = 2 mA, VCC = 5 V, RL = 100 Turn-on Time ) ton (IC = 2 mA, VCC = 5 V, RL = 1 k ) (IF = 16 mA, VCC = 5 V, RL = 1 k ) (IC = 2 mA, VCC = 5 V, RL = 100 Turn-off Time ) toff VCE(sat) CTR SL5582.W SL5583.W CNX82A.W CNX83A.W SL5582.W SL5583.W SL5582.W SL5583.W ALL ALL ALL SL5582.W SL5583.W ALL ALL SL5582.W SL5583.W 3 12 50 µs Min 40 40 40 25 10 20 15 0.19 3 12 20 µs 0.4 V 250 320 320 100 Typ** Max Units
%
(IC = 2 mA, VCC = 5 V, RL = 1 k ) (IF = 16 mA, VCC = 5 V, RL = 1 k )
ISOLATION CHARACTERISTICS
Characteristic Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance External air gap (clearance) External tracking path (creepage) Internal plastic gap (clearance) Note ** Typical values at TA = 25°C Test Conditions (II-O (VI-O = 1 µA, 1 min.) , f = 1 MHz) (VI-O = 500 VDC) Symbol VISO RISO CISO 9.6 8.0 1.0 Min 5300 1011 0.5 pf mm mm mm Typ** Max Units Vac(rms)
ORDERING INFORMATION
Order Entry Identifier
.300W
Option
300
Description
VDE 0884
2/29/00
200024C
6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
TYPICAL CHARACTERISTICS
2 VF, FORWARD VOLTAGE (VOLTS) PULSE ONLY PULSE OR DC IC, OUTPUT COLLECTOR CURRENT (NORMALIZED) 10
1.8
NORMALIZED TO: IF = 10 mA 1
1.6
1.4 TA = -55°C 1.2 25°C 100°C 1 10 100 1000 IF, LED FORWARD CURRENT (mA)
0.1
1
0.01
0.5
1
2
5
10
20
50
IF, LED INPUT CURRENT (mA)
Figure 1. LED Forward Voltage versus Forward Current
Figure 2. Output Current versus Input Current
25 IC, COLLECTOR CURRENT (mA) IF = 10 mA 20
IC, OUTPUT COLLECTOR CURRENT (NORMALIZED)
10 7 5 NORMALIZED TO TA = 25°C 2 1 0.7 0.5
15
10
5
0.2 0.1 -60 -40 -20 0 20 40 60 80 100
0 0 1 2 3 4 5 6 7 8 9 10
VCE - COLLECTOR-EMITTER VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Collector Current versus Collector-Emitter Voltage
Figure 4. Output Current versus Ambient Temperature
ICEO, COLLECTOR-EMITTER DARK CURRENT (NORMALIZED)
1000 NORMALIZED TO: VCE = 10 V TA = 25°C
20 18 16 C, CAPACITANCE (pF) 14 12 10 8 6 4 2 40 60 80 100 0 0.05 0.1 0.2 0.5 1 2 5 10 20 50 CCE CLED f = 1 MHz
100
10
VCE = 30 V
1 10V 0.1 0 20 TA, AMBIENT TEMPERATURE (°C)
V, VOLTAGE (VOLTS)
Figure 5. Dark Current versus Ambient Temperature
Figure 6. Capacitance versus Voltage
2/29/00
200024C