Text preview for : bu508af.pdf part of Fairchild BU508AF TV Horizontal Output Applications
Back to : bu508af.pdf | Home
BU508AF
BU508AF
TV Horizontal Output Applications
1
TO-3PF 2.Collector 3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCES VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1500 700 5 5 15 60 150 - 65 ~ 150 Units V V V A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) BVEBO ICES IEBO hFE VCE(sat) VBE(sat) Parameter * Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Test Condition IC = 100mA, IB = 0 IE = 10mA, IC = 0 VCE = 1500V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 4.5A IC = 4.5A, IB = 2A IC = 4.5A, IB = 2A 2.25 1 1.5 V V Min. 700 5 1 10 Typ. Max. Units V V mA mA
* Pulse Test: PW = 300µs, duty cycle = 1.5% Pulsed
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
BU508AF
Typical Characteristics
100
10000
VBE(sat)[mV], SATURATION VOLTAGE
VCE = 5V
IC = 2 IB
hFE, DC CURRENT GAIN
10
1000
1
100
0.1 0.01
0.1
1
10
10 0.1
1
10
100
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. Base-Emitter Saturation Voltage
10000
1000
VCE(sat)[mV], SATURATION VOLTAGE
IC = 2 IB
f = 1MHz
1000
Cob [pF], CAPACITANCE
1 10 100
100
100
10 0.1
10 1 10 100
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
100
80
70
IC[A], COLLECTOR CURRENT
IC Max. (Pulsed)
10
1m s
PC [W], POWER DISSIPATIOAN
60
IC Max. (Continuous)
50
DC
1
40
30
0.1
20
10
0.01 1 10 100 1000
0 0 25 50
o
75
100
125
150
175
200
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
BU508AF
Package Dimensions
TO-3PF
5.50 ±0.20
4.50 ±0.20
15.50 ±0.20
ř3.60 ±0.20
3.00 ±0.20 (1.50)
10.00 ±0.20
10
°
26.50 ±0.20
23.00 ±0.20
16.50 ±0.20
14.50 ±0.20
0.85 ±0.03
16.50 ±0.20
2.00 ±0.20
14.80 ±0.20
2.00 ±0.20 2.00 ±0.20 4.00 ±0.20 0.75 0.10
+0.20
2.00 ±0.20
2.50 ±0.20
2.00 ±0.20
3.30 ±0.20
5.45TYP [5.45 ±0.30]
5.45TYP [5.45 ±0.30]
0.90 0.10
+0.20
3.30 ±0.20
2.00 ±0.20
5.50 ±0.20
1.50 ±0.20
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
22.00 ±0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST® FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC® OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench® QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER® SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET® VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1