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BU407/407H
BU407/407H
High Voltage Switching
· Use In Horizontal Deflection Output Stage
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 330 150 6 7 10 4 60 150 - 65 ~ 150 Units V V V A A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = 330V, VBE = 0 VCE = 200V, VBE = 0 VCE = 200V, VBE = 0 @ TC= 150°C VBE = 6V, IC = 0 IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A VCE = 10V, IC = 0.5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A 10 0.75 0.4 Min. Max. 5 100 1 1 1 1 1.2 1.2 Units mA µA mA mA V V V V MHz µs µs
IEBO VCE(sat)
Emitter Cut-off Current Collector-Emitter Saturation Voltage : BU407 : BU407H Base-Emitter Saturation Voltage : BU407 : BU407H Current Gain Bandwidth Product Turn OFF Time : BU407 : BU407H
VBE(sat)
fT tOFF
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BU407/407H
Typical Characteristics
5
mA 180
IB = 2
00m
A
IB =
IB = 160mA
A IB = 140m A IB = 120m
1000
VCE = 5V
IC[A], COLLECTOR CURRENT
4
0m A IB = 10
hFE, DC CURRENT GAIN
10
IB = 80
3
mA mA = 4 0 mA
IB = 60 IB
100
2
IB = 20mA
1
10
0 0 1 2 3 4 5 6 7 8 9
1 1 10 100 1000 10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE
10000
1000
IC = 10 IB
f = 1MHz
1000
VBE(sat)
Cob [pF], CAPACITANCE
100
100
10
VCE(sat)
10 1 10 100 1000 10000
1 1 10 100
IC[mA], COLLECTOR CURRENT
V CB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
80
70
IC Max. (Pulsed)
10
PD [W], POWER DISSIPATIOAN
IC[A], COLLECTOR CURRENT
60
IC Max. (Continuous)
50
n io at ip ss Di
s 1m
s m 10 s 0m 10 ited m Li
40
1
30
20
VCE MAX.
d ite im bL S/
10
0.1 1 10 100
0 0 25 50
o
75
100
125
150
175
200
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BU407/407H
Package Demensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ø3.60 ±0.10
(1.70)
1.30 0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45° )
0.50 0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E