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BU407/407H

BU407/407H
High Voltage Switching
· Use In Horizontal Deflection Output Stage

1

TO-220 2.Collector 3.Emitter

1.Base

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 330 150 6 7 10 4 60 150 - 65 ~ 150 Units V V V A A A W °C °C

Electrical Characteristics TC=25°C unless otherwise noted
Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = 330V, VBE = 0 VCE = 200V, VBE = 0 VCE = 200V, VBE = 0 @ TC= 150°C VBE = 6V, IC = 0 IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A VCE = 10V, IC = 0.5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A 10 0.75 0.4 Min. Max. 5 100 1 1 1 1 1.2 1.2 Units mA µA mA mA V V V V MHz µs µs

IEBO VCE(sat)

Emitter Cut-off Current Collector-Emitter Saturation Voltage : BU407 : BU407H Base-Emitter Saturation Voltage : BU407 : BU407H Current Gain Bandwidth Product Turn OFF Time : BU407 : BU407H

VBE(sat)

fT tOFF

©2000 Fairchild Semiconductor International

Rev. A, February 2000

BU407/407H

Typical Characteristics
5
mA 180

IB = 2

00m

A

IB =

IB = 160mA
A IB = 140m A IB = 120m

1000

VCE = 5V

IC[A], COLLECTOR CURRENT

4

0m A IB = 10

hFE, DC CURRENT GAIN
10

IB = 80
3

mA mA = 4 0 mA

IB = 60 IB

100

2

IB = 20mA
1

10

0 0 1 2 3 4 5 6 7 8 9

1 1 10 100 1000 10000

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

VCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE

10000

1000

IC = 10 IB

f = 1MHz

1000

VBE(sat)

Cob [pF], CAPACITANCE

100

100

10

VCE(sat)

10 1 10 100 1000 10000

1 1 10 100

IC[mA], COLLECTOR CURRENT

V CB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

80

70

IC Max. (Pulsed)
10

PD [W], POWER DISSIPATIOAN

IC[A], COLLECTOR CURRENT

60

IC Max. (Continuous)

50

n io at ip ss Di

s 1m

s m 10 s 0m 10 ited m Li

40

1

30

20

VCE MAX.

d ite im bL S/

10

0.1 1 10 100

0 0 25 50
o

75

100

125

150

175

200

VCE[V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area

Figure 6. Power Derating

©2000 Fairchild Semiconductor International

Rev. A, February 2000

BU407/407H

Package Demensions

TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10

4.50 ±0.20

(8.70) ø3.60 ±0.10

(1.70)

1.30 ­0.05

+0.10

9.20 ±0.20

(1.46)

13.08 ±0.20

(1.00)

(3.00)

15.90 ±0.20

1.27 ±0.10

1.52 ±0.10

0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]

10.08 ±0.30

18.95MAX.

(3.70)

(45° )

0.50 ­0.05

+0.10

2.40 ±0.20

10.00 ±0.20

Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000

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DISCLAIMER

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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

©2000 Fairchild Semiconductor International

Rev. E