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DS1250Y/AB
4096k Nonvolatile SRAM
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FEATURES PIN ASSIGNMENT
10 years minimum data retention in the A18 1 32 VCC
absence of external power A16 2 31 A15
Data is automatically protected during power A14 3 30 A17
A12 4 29 WE
loss A13
A7 5 28
Replaces 512k x 8 volatile static RAM, A6 6 27 A8
EEPROM or Flash memory A5 7 26 A9
A4 8 25 A11
Unlimited write cycles
A3 9 24 OE
Low-power CMOS A2 10 23 A10
Read and write access times as fast as 70 ns A1 11 22 CE
Lithium energy source is electrically A0 12 21 DQ7
DQ0 13 20 DQ6
disconnected to retain freshness until power is
DQ1 14 19 DQ5
applied for the first time
DQ2 15 18 DQ4
Full