Text preview for : TN2504.pdf part of Keithley TN2504 Keithley 2001 ds TN2504.pdf



Back to : TN2504.pdf | Home

Supertex inc. TN2504

N-Channel Enhancement-Mode
Vertical DMOS FET

Features General Description
Low threshold (1.6V max.) This low threshold, enhancement-mode (normally-off)
High input impedance transistor utilizes a vertical DMOS structure and Supertex's
Low input capacitance (125pF max.) well-proven, silicon-gate manufacturing process. This
Fast switching speeds combination produces a device with the power handling
Low on-resistance capabilities of bipolar transistors and with the high input
Free from secondary breakdown impedance and positive temperature coefficient inherent
Low input and output leakage in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
Applications secondary breakdown.
Logic level interfaces