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BC337/338
BC337/338
Switching and Amplifier Applications
· Suitable for AF-Driver stages and low power output stages · Complement to BC327/BC328 TO-92
1
1. Collector 2. Base 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCES Parameter Collector-Emitter Voltage : BC337 : BC338 Collector-Emitter Voltage : BC337 : BC338 Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Value 50 30 45 25 5 800 625 150 -55 ~ 150 Units V V V V V mA mW °C °C
VCEO
VEBO IC PC TJ TSTG
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC337 : BC338 Collector-Emitter Breakdown Voltage : BC337 : BC338 Emitter-Base Breakdown Voltage Collector Cut-off Current : BC337 : BC338 DC Current Gain Collector-Emitter Saturation Voltage Base Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC=10mA, IB=0 Min. 45 25 IC=0.1mA, VBE=0 50 30 IE=0.1mA, IC=0 VCE=45V, IB=0 VCE=25V, IB=0 VCE=1V, IC=100mA VCE=1V, IC=300mA IC=500mA, IB=50mA VCE=1V, IC=300mA VCE=5V, IC=10mA, f=50MHz VCB=10V, IE=0, f=1MHz 100 12 100 60 5 2 2 100 100 630 0.7 1.2 V V MHz pF V V V nA nA Typ. Max. Units V V
BVCES
BVEBO ICES
hFE1 hFE2 VCE (sat) VBE (on) fT Cob
hFE Classification
Classification hFE1 hFE2 16 100 ~ 250 6025 160 ~ 400 10040 250 ~ 630 170-
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC337/338
Package Dimensions
TO-92
4.58 0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1