Text preview for : HP-Bench-Briefs-1990-07-12.pdf part of HP HP-Bench-Briefs-1990-07-12 HP Publikacje HP-Bench-Briefs-1990-07-12.pdf
Back to : HP-Bench-Briefs-1990-07-1 | Home
SERVICE INFORMATION FROM HEWLETT-PACKARD
3rd & 4th Quarters 1990
rim BechtoldlEditor
Introduction
The field-effect transistor (or FET) is
a three-terminal device that can be
used in a multitude of applications
ranging from signal amplification to
logic and memory functions. The
FET's basic principle involves using
voltage between two terminals to con-
trol the current flowing in the third
terminal. In this wa a FET can be the
7
basis for an ampli ier or a switch.
There are two fundamental types of
Figure 2. Circuit symbol for n-channel
JFET.
FETs to look at, the junction field-ef-
fect transistor (JFET) and the metal-
oxide-semiconductor FET, or MOSFET. Although only one pn junction exists,
operation of the JFET is dependent on
The name field-effect transistor arises establishing different values of re-
from the fact that current flow be- verse bias at the two ends (source and
tween two of the device terminals is drain) of this junction. Because of
controlled by an electric field, which this, references are sometimes made
in turn is established by a voltage Figure 1. Basic structure of n-channel
to gate-to-drain junction and gate-to-
applied to the third terminal. FETs are JFET. ** source junction.
also called unipolar transistors be-
cause current is conducted by charge
carriers (electrons or holes) flowing p-type region to provide the gate ter- Comparisons
through one type of semiconductor minal (G). The p-channel FET works
material (either n-type or p-type). This in a similar manner except for a reversal Referring to Figure 3, you see that a
is in contrast to bipolar transistors of polarities of all currents and voltages. vacuum tube is voltage sensitive. By
where current passes through both n- controlling the voltage on the grid,
type and p-type semiconductor Figure 2 shows the circuit symbol for current flow through the tube can be
materials in series. the n-channel JFET. Note that the gate regulated. Very little current flows in
line has an arrowhead whose direc- the grid circuit; that is, a vacuum tube
tion indicates the type of the device. has a very high input impedance. A
JFET Physical Operation The arrow points inward if the sub- bipolar transistor, however, responds
strate is made from n material, and to current flow in its base-emitter cir-
Figure 1 shows the basic structure points away from the substrate if cuit. Appreciable current must flow
(simplified and idealized) of the n- made from p material. to saturate the transistor. Thus the
uchannel JFET. It consists of a slab of input impedance is rather low. Notice
\$ n-type silicon with p-type-silicodif- It can be seen from Figure 1 that the also that the tube needs a bias more
A? fused on both sides. Thk n regioi is JFET has one pn junction, the gate-to- negative than its cathode, whereas
'r\ called the channel, w h i l & w p e channel junction. In almost all appli- the base voltage on a transistor is
- regions are electrically connected to- cations this junction will be reverse- somewhere between the emitter and
gether and form the gate. Metal con- biasedcand henc9. only a very small collector. The JFET has a gate, source,
f" tacts are made to both ends of the leakage current will flow in the gate and drain. These are analogous to the
channel, with the terminals called the terminal. This also means that the base, emitter, and collector, respec-
source ( S ) and the drain (D). Simi- input impedance looking into the gate tively, on a bipolar transistor and also
larly, a metal contact is made to the will be very high. to the gird, cathode, and anode, re-
Pub. No. 5952-3459 0 HewleH-Packard 1990
WWW.HPARCHIVE.COM
spectively, on a vacuum tube. The
FET responds to the electric field
created by the voltage on the gate. ANODE COLLECTOR DRAIN
Varyingaggate voltage will vary cur-
rent flow ' ("channel current?) be-
tween source and drain. b
Enhancement vs. Depletion
CATHODE EMITTER SOURCE
A significant difference between
JFETs and MOSFETs is that all JFETs VACUUM BIPOLAR JUNCTION
are of the depletion type while MOSFETs TUBE NPN N CHANNEL
TRANSISTOR FET
can be either depletion or enhance-
ment type.
Figure 3. Vacuum tube, bipolar transistor and JFET.
Simply stated, enhancement-type
FETs must have their channel en-
hanced (or improved) to obtain con-
FIELD EFFECT TRANSISTORS
duction. That is, they must be actively
biased on to promote current flow
through the device. Zero bias will JUNCTION FETS
cause minimum current flow. Deple-
tion FETs are just the opposite -with
OV bias, maximum current will flow.
These two types of MOSFETs can be
identified by their symbol. A deple-
tion MOSFET is diagrammed with an
unbroken line, indicating the pre-
sence of a channel. That is, conduc-
tion will occur with zero bias. An en-
hancement MOSFET has its channel
diagrammed with a broken line, sig-
nifying that no channel exists in the
enhancement device until a positive
voltage improves or enhances the
channel.
FETs can be made out of p-doped
(positive) material or n-doped (nega-
tive) material, just as bipolar transis-
tors can be PNP or NPN. The direc-
tion of the arrow on the symbol indi- Figure 4. Transistor types.
cates p or n. The arrow points to n-
channel, just as in the bipolar case.
That is, in a PNP bipolar transistor
the arrow points to n material (the
base). In an NPN transistor the arrow
points toward the emitter (again n
material).
In FETs the arrow points inward if
the substrate is made from n material
(and points away from the substrate
if made from p material). See Figure 4.
Depletion-Type MOSFET
Physical Operation
Figure 5 shows the basic structure
(simplified and idealized) of an n-
channel depletion-type MOSFET. As
shown, the n-channel device is
formed on a p-type silicon substrate. Figure 5. Basic structure of n-channel depletion-type MOSFET.
2 BENCH BRIEFS 3RD & 4TH QUARTERS 1990
WWW.HPARCHIVE.COM
The two heavily doped n f wells form
low-resistance connections between
the ends of the n channel and the
metal contacts of the source (S) and
the drain (D). A thin oxide layer is
grown on the surface of the channel,
and metal (aluminum)is deposited on
it to form the gate (G). At this point
it should be clear that the name MOS
I
is derived from the structure of the
device.
is controlled by the
pn junction, this is
4'7 \not the case in the MOSFET. Here the
oxide layer acts as an insulator that
causes the gate current to be negli-
gibly small (lo-" to This gives Figure 7. Basic structure of enhancement-
the MOS transistor its extremely high
input resistance under all conditions. representing the gate electrode an source we first have to create an n
the line representing the channel de- channel. This can be done by apply-
notes the insulating oxide layer. The ing a positive voltage between the
arrow on the substrate line points in gate and source that is greater than
P" the forward direction of the substrate- the positive threshold voltage of the
to-channel pn junction and hence in- particular MOSFET.
dicates the polarity of the device (n-
channel in this case). Figure 8 shows the circuit symbol of
the n-channel enhancement-type
In many applications the substrate is MOSFET. The only difference be-
As electrically connected to the source. tween this symbol and that of the de-
Figure 6a. Circuit symbol for the n-chan- Since the drain voltage will be positive pletion-type shown in Figure 6 is that
ne1 depletion-type MOSFET. with respect to the source, the sub- here the channel is represented by a
strate-to-channel junction will always broken line, which signifies that no
be r e n d and hence the sub- channel exists in the enhancement
strat curent ill be almost zero.
7" Figure 6b is a simplified symbol of
G-q
r
Figure 6a. Note that the polarity of
the device is indicated by the direction
of the arrowhead on the source line;
AS the arrowhead points in the normal
Figure 6b. Simplified circuit symbol for direction of current flow in the source
the n-channel depletion-type MOSFET. lead.
Enhancement-Type MOSFET
Figure 6. Simplified circuit symbol for de- 6s
pletion-type MOSFET.
Physical Operation
Figure8a. Circuit symbol forthe n-chan-
ne1 enhancement-type MOSFET.
The enhancement-type MOSFET
As mentioned before, the depletion- shown in Figure 7 is the most widely
type MOSFET operates much like the used device in the design of MOS in-
JFET. The fundamental difference is tegrated circuits. As shown in Figure
that in the JFET the channel is de- 7, the structure looks quite similar to
pleted by reverse-biasing the gate-to- that of the depletion device shown in
ITB
channel junction. In the MOSFET Figure 5, with one exception: there is
control of the channel width is %f- no channel.
fected by an electric field created by
the voltage on the gate. The more It follows that if the gate is left float-
negative the gate the less current ing, or if the voltage between the gate
flows. and source equals zero, the path from Figure8b. Circuit symbolforthepchan-
0- Figure 6a shows the circuit symbol of
drain to source includes two series
diodes back-to-back, which means - ne1 enhancement-type MOSFET.
the n-channel depletion-type MOSFET. that no drain current can flow. To Figure 8. Simplified circuit symbol for the
Note that the space between the line cause current to flow from drain to enhancement-type MOSFET.
3RD & 4TH QUARTERS 1990 BENCH BRIEFS 3
WWW.HPARCHIVE.COM
Summary resistors or diodes are needed). For ferred to as the "ideal" logic family.
this reason, because MOS devices can Moreover, CMOS is capable of imple-
JFETs are useful in the design of be made quite small (that is, occupy- menting a variety of analog circuit
special amplifier circuits, especially ing a small silicon area on the IC chip), functions; therefore, CMOS is the
@those with very high input impe- and because their manufacturing pro- technology of choice whenever ?
dances. For instance, op amps with cess is relatively simple (as compared analog and digital functions are to be
& very high input impedances usually
5p
.
have a first stage made up of JFETs.
JFETs can also be combined with bipo-
2,
to that of bipolar transistors most
very-large-scale-integrated (V SI) cir-
cuits are currently made using MOS
implemented on the same VLSI circuit
chip.
lar transistors to provide high-perfor- technology. Examples include micro-
% 'mance linear circuits (called BIFET cir- processor and memory packages. MOS transistors have very high input
cuits). The JFET structure employing MOS technology has also been impedance and consume little static
a metal-semiconductor (Schottky) applied to the design of analog inte- power. This makes them quite useful
junction is used with the semiconduc- grated circuits. in the design of micropower circuits,
tor gallium arsenide to form the MES- both digital and linear. Needless to
FET, a JFET-like device suitable for NMOS (n-channel) technology has say, the MOS transistor is also very
application in amplifiers and logic cir- been perfected where faster devices useful in the design of amplifiers with
cuits in the gigahertz range. The JFET are occupying smaller silicon area. extremely high input impedance.
is also used as an analog switch and The other dominant VLSI technology MOS transistors can also be used as
in a variety other analog circuit is complementary-symmetryMOS (or analog switches. Thisjtogether with
applications. CMOS). As the name implies, CMOS the ability to manufacture capacitors
circuits use both n-channel and p- whose ratios are very accurate using
Digital logic and memory functions channel devices on the same IC chip. MOS technology, has motivated its
can be implemented with circuits that CMOS logic circuits are currently application in the design of analog
exclusively use MOSFETs (that is, no quite popular and are sometimes re- signal-processing circuits. 0
Lock-in Low Cost of Ownership for Your HP Instrument Products "I
Terry OwenlHewlett-Packard Ensure Low Cost of Ownership cess. HP quotes and invoices these
Product Support Division options according to your require-
HP Support Options offer you excel- ments. You can now make one buying
What factors do you consider when lent support value. Each option is decision for both your hardware and
purchasing an instrument product? competitively priced and more support, using the same product pur-
Certainly, instrument performance is economical than per-incident ser- chase order.
important. Another factor to consider vices. By purchasing HP Support Op-
is cost of ownership. What will it cost tions, you benefit by locking-in your
to keep the instrument operating at HP Support Options Features
cost savings for an extended period.
peak performance throughout its use- You also save time and money by Option W30
ful life? eliminating unexpected expenses and Option W30 adds to product warranty
Hewlett-Packard instruments are the associated paperwork. to provide you with a total of three
known for their quality and perfor- years of customer return repair service
mance. Your HP sales representative Maximize Your Hardware from the time of hardware delivery.
can help you find the instrument Uptime
Q
products uniquely suite our test Under Option W30, HP provides all
and measurement need He can also HP Support Options extend the be- labor, parts, and materials necessary
ensure that you enjoy cost of nefits of warranty coverage. Your to maintain your product in good
ownership with HP Support Options. operating condition. In addition, HP
products enjoy "head of the queue"
will perform preventive maintenance
HP Support Options are a family of priority service from highly trained,
and install factory-recommendedim-
services designed for purchase with factory-backed service technicians.
provements and modifications, when
hardware products. They add sup- With HI' Support Options, you're
appropriate, at the time of product
port services to product warranty to back in business fast.
repair.
provide you with HP's quality sup-
port for an extended period of time. Simplify Your Purchase Option W31
These competitively priced and easily Decision Option W31 offers you the conveni- 3
ordered services demonstrate HP's ence of quick, on-site service at an
commitment to quality and low cost HP Support Options are designed to economical price. Option W31 adds
of ownership. fit with your hardware purchase pro- to product warranty to provide you
4 BENCH BRIEFS 3RD & 4TH QUARTERS 1990
WWW.HPARCHIVE.COM
with a total of three years of next-day calibration services keep your HP in- the appropriate national standards or-
on-site repair coverage from the time struments operating with precision. ganization. HP makes any adjust-
of hardware delivery. Option W32 provides three years of ment necessary for the instrument to
customer return calibration service meet specifications and performs pre-
I` Under Option W31, HP provides all from the time of hardware delivery.
This coverage includes scheduled
ventive maintenance. We issue a Cer-
labor, parts and materials necessary tificate of Calibration and place a
to maintain in good operating condi- calibration at HP's recommended calibration decal on the instrument,
tion products covered at your desig- calibration cycle, as well as calibration indicating the calibration date and the
nated site. This option is limited to after a required repair performed by next calibration due date.
products located within 200 miles of HP.
an HP Support Responsible Office.
After receipt of your service request, Option W32 is available on hundreds Specify HP Support Options
HP responds within the next HP of HP instruments, offering you with Your Next Order
working day. HP also performs pre- superior calibration that leads to con-
ventive maintenance and installs fac- fidence in measurements. HI` man- HP Support Options are available for
tory-recommended improvements ages the recommended calibration most HP test and measurement prod-
and modifications, when approp- cycle, providing you with depend- ucts. They are available only at the
riate, at the time of product repair. able, thorough calibration to verify time of hardware purchase, and allow
that your equipment meets the prod- you to extend the benefits of warranty
Option W32 uct's published specifications. coverage and
Hewlett-Packard is known world- f '! costs. Ask your HP sales
wide for the quality, reliability, and All measurementrfnade by HI' in per- clude HP Support
integrity of its measurements. HP forming calibrations are traceable to on your next hardware order. 0
Safety-Faelated
Service Notes
cMODEL #
1650A
PSSN NUMBER
1650A-12-S
STARTING S / N
2814A04504
ENDING S/N
2814A04573
1
16508 1650B-04-S 2924A00461 2924A00890
2945A00891 2945A02066
1651A 1651A-12-S 2814A02437 2814A02470
1651B 1651B-04-S 2924A00241 2924A00520
2945A00521 2945A01220
16548 1654B-03-S 3010A00100 3010A00141
54501A 54501A-05-S 2930A08612 2930A12803
54502A 54502A-05-S 2934A00771 2934A03989
5450314 54503A-04-S 2929A00565 2929A02997
54504A 54504A-01-S 2944A00100 2944A01099
HP 4951C Protocol Analyzer
HP 4951Cs with serial numbers
0000F00000/2846F52818 may have an
earth groundhear panel connection
that does not meet HP standards.
Note that not all instruments within
lighted with a contrasting color. resistance) is less than or equal to 0.1 the serial number range require re-
work, but will require inspection for
the possibility of the fault. Please
i
is greater thin 0.1 Ohm, the unit
Safety Service Note for HP 5450X should be sent to an ~p Service order Safety Service Note 4951C-13-S
and 165X Products Center to have the line filter replaced. for more information.
A note has been issued HP 4952A Protocol Analyzer
The percentage of units with suspect
for the 54501A4, 54502A` 54503A' line filters is quite small. There are HI' 4952As with serial numbers
0000F00000/2945F23385 may have an
earth groundhear panel connection
that does not meet HP safety stan-
dards. Note that not all instruments
The 54510& 1652B and 165313 are not measurement should be made to as-
within the serial number range re-
sure the of complete safety.
0- affected by this service note. quire rework, but will require inspec-
tion for the possibility of the fault.
This service note indicates that units Please see the appropriate service Please order Safety Service Note
falling in the above serial number note for full details. 4952A-14-S for more information.
(See "Service Notes," page 39)
3RD 81 4TH QUARTERS 1990 BENCH BRIEFS 5
WWW.HPARCHIVE.COM
Integrated Circuits
Pe~kmment
par! Cross Reference
When selecting replacement parts for
your HP products, you may notice
quality checks are employed to ensure
that only the highest reliability parts
part). Even though the cross-refer-
ence only lists one manufacturer,
7
that many manuals list only an HP are used. there may actually be several ap-
part number for the part, even though proved sources for an HP part. While
it appears that this part is manufac- Therefore, we suggest obtaining re- every attempt was made to ensure the
tured by one of the large semiconduc- placement parts from HP to maintain accuracy of the list, it is advisable to
tor manufacturers. Service personnel the quality that you have paid for in compare the description of the device
often ask why only HI' part numbers your instrument. There may be situa- being replaced with the description
are listed. tions however, where HP replace- of the substituted part. For example,
ment parts are not in stock and sub- if the service manual describes the de-
It is recommended that HP replace- stituting parts will allow you to return vice being replaced as a "dual J-K flip-
ment parts be used to ensure that the the product to service immediately. flop", check this against the descrip-
original performance of the product In these cases it may be worthwhile tion of the replacement part.
will be maintained. While some parts to see if a substitute part will work in
used in HP instruments are identical the circuit. Perhaps an HP part could
to those that can be purchased at a be ordered and installed at some later NOTE
local electronics distributor, many date. This is not a comprehensive list. If the
times parts will be selected for certain part number you are looking for is not
characteristics, such as gain, To help you in these situations, here listed here, the semiconductor is
bandwidth, capacitance, etc. There is a cross-reference of HP integrated made exclusively for Hewlett-Packard
may also be slight mechanical differ- circuit part numbers to manufacturers and there is no substitute - it must
ences, such as the shaping or length "generic type" part numbers (whom be replaced with the same HP part
of leads, and in some cases special in most cases is the originator of the number. 0
Manufacturers' Code Number Cross Reference
No. Manufacturer No. Manufacturer
00039
00046
NEC ELECTRONICS INC
UNITRODE CORP
MTN VIEW
LEXINGTON
CA
MA
US 9404380545
US 021739N171
8
3
06545
06861
LAMBDA ELECTRONICS CORP
MICRO NTWORKS CORP
MELVILLE
WORCESTER
NY
MA
1174680103 8
0160650507 29
'1
00350 EXAR INTEGRATED SYSTEMS INC SUNNYVALE CA 9408652063 9 06916 SONY CORP TOYKO JP 141 SO482 1
00575 WESTERN DIGITAL CORP NEWPORT BEACH CA 9262652840 1 07050 MICRO POWER SYSTEMS SANTA CLARA CA 9505054186 8
01425 STANDARD MICROSYSTEMS CORP HAUPPAUGE NY 8 07221 SUPERTEX INC SUNNYVALE CA 94086 5
01542 HP DfV 01 SAN JOSE COMPONENTS SAN JOSE CA US 9513128480 0 07371 SANYO ELECTRIC INC TOKYO JP 8
01590 PLESSEY SEMICONDUCTORS SANTA ANA CA 9270552648 9 07397 ENGINEERED COMPONENTS CO SAN LUIS OBISW CA 93401 3
01698 TEXAS INSTRUMENTS INC DALLAS TX US 7526501295 0 08323 HP DIV 49 CICO CUPEF3'INO CA 8
01795 SYNERTEK SANTA CLARA CA 9505155576 4 08507 INTERDESIGN SCOTPS VALLEY CA 6
01876 HP DIV 02 SCD 1C.S SANTA CLARA CA US 9505028480 2 08608 SILICON SYSTEMS INC TUSTIN CA 2
01921 RCA CORP NEW YORK NY US 101123L585 6 08779 MITSUBISHI ELECTRONICS AMERICA SUNNYVALE CA US 94086 1
01973 GE CO SEMICONDUCTOR PROD DEFT AUBURN NY US 1320103508 7 08810 ROCKVELL It?ERNATIONAL ANAHEIM CA 4
02023 IIW SWITCHES CHICAGO IL US 6063104426 0 08831 GTE MICROCIRCUITS TEMPE AZ 0
02037 MOMROLA INC ROSELLE IL us 6019504713 0 09161 MITEL SEMICONDUCTOR KANATA OTPAWA CN 1
02180 PRECISION MONOLITHICS INC SANTA CLARA CA US 9505406665 8 09283 TOPAZ SEMICONDUCTOR SAN JOSE CA US 95132
02237 FAIRCHILD SEMICONDUCTOR CORP CUPERTINO CA US 9501407263 6 09768 OK1 SEMICONDUCTOR SANTA CLARA CA
02290 RAYTHEON CO SEMICONDUCTOR DIV HQ MOUNTAIN VIEW CA 9404007933 5 10253 INTEGRATED DEVICE TECHNOLOOY. INC SANTA CLARA CA
02598 UNITRODE CORP WATERTOWN MA 0217212969 31 10321 DATEL-INTERSIL MANSFIELD MA
02686 WATKINS-JOHNSONCO PAL0 ALTO CA US 9430414482 10420 INMOS COLORADO SPGS co
02713 GENERAL INSTRUMENT CORP (DIODE) HICKSVILLE NY US 1180214936 6 10421 EPSON TORRENCE CA
02739 MINI-CIRCUITS LAB BROOKLYN NY US 1123515542 1 10443 HP DIV 64 NID CORVALLIS OR 0
02763 TELEDYNE INDUSTRIES INC LOS ANGELES CA US 9006715818 1 10572 XICOR. INC MILPITAS CA 6
02838 DYNAMIC MEASUREHENTS CORP WINCHESTER MA 0189017191 1 10858 LINEAR TECHNOLOGY CORP MILPITAS CA US 95035 9
02883 SILICONIX INC SANTA CLARA CA US 9505417856 7 10881 THOMSON-CSF COURBEVOIE FR 1
02910 SIGNETICS CORP SUNNYVALE CA US 9408618324 8 11111 SEEq TECHNOLOGY INC SAN JOSE CA 2
03174 AN7.AC ELEK DIV ADAMS-RUSSEL CO INC WALTHAM MA 0215421912 0 11187 VLSI TECHNOLOCY INC SAN JOSE CA US 95131 2
03285 ANALOG DEVICES INC NORWOOD MA US 0206224355 4 11302 MAXIM INTEGRATED PRODUCTS SUNNYVALE CA 7
03291 AVANTEK INC SANTA CLARA CA US 9505424539 2 11320 ATP TECHNOLOGY CHICAGO IL 9
03406 NATIONAL SEMICONDWVJR CORP SANTA CLARA CA US 9505227014 6 11345 CYPRESS SEMICONDUCTOR CORP SAN JOSE CA US 95134
03545 TELEDYNE PHILBRICK NEXUS DEDHAM MA 0202629832 1 11452 ANAHEIM AUTOMATION PRODUCTS DIV ANAHEIM CA 0
03677 AMERICAN MICRO SYSTEMS INC SANTA CLARA CA US 9505131471 2 11561 RELIABILITY INC TIPPERATY IR 8
03688 ANALOCIC CORP WAKEFIELD MA 0188031814 9 11596 CIRCUIT TECHNOLOGY INC FARMINGDALE NY 4
03714 INTERSIL INC CUPERTINO CA CA 9501432293 3 11604 COMLINEAR CORP LOVELAND CO US 80537 6
03755 HYBRID SYSTEHS CORP BURLINGTON MA 0180333256 x 6 11668 ROCKVELL INT'L, SEMICONDUCTOR DIV. NEUPORT BEACH CA 1
03780 INTECH INC SANTA CLARA CA 9505033967 4 11688 CALEX MANUFACTKQING CO INC PLEASANT HILL CA US 94523 9
03793 SILICON GENEFAL INC SAN JOSE CA US 9513434333 7 11777 ELANTEC INC MILPITAS CA US 95035 0
03794 ADVANCED MICRO DEVICES INC SUNNYVALE CA US 9408634335 5 11825 ANALOG SOLUTIONS CONCORD CA US 94518 7
03799 HARRIS CORP MELBOURNE FL US 3290134371 4 11899 RICOH CORP CALDWELL NJ US 07006 2
03811 INTEL CORP SANTA CLARA CA US 9505434649 7 11943 SIERRA SEMICONDUCTOR SAN JOSE CA US 95132 8
03921 NMB CORP CHATSWORTH CA US 9131138674 4 11966 ILC DATA DEVICE c n w BOHENIA NY US 11716 9
03947 NCR CORP DAYTON OH US 4547942470 9 11967 AT h T TECHNOLOGIES INC NEW YORK NY us 10022 7
04077 CERMETEK INC DIV REPUBLIC CORP MOUNTAIN VIEW CA 9404050077 12125 SAMSUNG SEMICONDUCTOR INC SANTA CLARA CA US 95054
04078 SGS-THOMSON MICROELECTRONICS INC PHOENIX AZ US 8502250088 2 12128 VT- TWP
.- P - BLOOMINWON MN US 55420
04092 MONOLITHIC HEMORIES INC SANTA CLARA CA US 9505450364 3 12147 TELMOS INC SUNNYVALE CA US 94086
04183 NITRON DIV MCDONNELL DOUGLAS CORP CUPERTINO CA 9501454335 0 12186 DALLAS SEMICONDUCTOR CORP DALLAS TX US 75244
04200 SPRAGUE ELECTRIC CO LEXINGTON MA US 0217356289 2 12253 GAMMA HIGH VOLTAGE RESEARCH W' VERNON
A NY US 10550 1
04507 TRW INC CLEVELAND OH US 4412471785 0 12276 NIPPON GAKKI CO LTD TOKYO JP 438-0 2
04550 GENERAL ELECTRIC CO FAIRFIELD CT US 0643072799 0 12382 LAlTICE SEMICONDUCMR CORP BEAVERTON OR US 97006 8
05436 BURR-BROWN CORP TUCSON AZ US 857068E175 1 12385 S-MOS SYSTEMS SAN JOSE CA US 95110
05542 MONEYWELL INC MINNEAPOLIS PN US 5540891929 6 12404 XILINX INC SAN JOSE CA US 95124
05917 RIFA AB STOCKHOLM SW S-163CO633 0 12461 BROOKTREE c o w SAN DIEGO CA us 92121
05946 VALVO GMBA HAMBURG GM 2000D2540 9 12521 ENDICOlT RESEARCH GROUP ENDICOTT NY US 13760
06121 SIEMENS AD MUNICH GM 8000 12717 UNIVERSAL SEMICONDUCTOR INC SAN JOSE CA US 95112
06338 SGS ATES MILAN IT ~3500 8 12768 SEIKO EPSON CORP NAJANO-KEN TOW JP
06344 FUJITSU MICROELECTRONICS INC SANTA CLARA CA US 9505450167 6 12880 ALTERA CORP SANTA CLARA CA US 95051
06347 HITACHI AMERICA LTD S W A L E CA US 9408654013 9 12881 CRYSTAL SEMICONDUCTOR CORP AUSTIN TX US 78760
06352 TDK CORPORATION OF AMERICA SKOKIE IL US 60076 9 12882 CONVERSION DEVICES INC BROCKTON MA US 02401
06353 TOKO INC TOKYO JP 54218 7 12905 ACTEL CORP S W A L E CA US 94086
06354 TOSHIBA CORP TOKYO JP SO562 5 12962 MICRO LINEAR CORP SAN JOSE CA US 95131
06394 FERRANTI LTD ELECTRONICS DIV OLDHAM LANCS EO K1196 1 13053 MICROCHIP TECHNOLOGY INC CHANDLER AZ US 85226
13136 SYNERGY SEMICONDUCTOR CORP SANTA CLARA CA US 95051 7
6 BENCH BRIEFS 3RD & 4TH QUARTERS 1990
WWW.HPARCHIVE.COM
HPP/N Mtr. Desc. HPP/N Mfr. Desc. HPP/N Mfr. Desc. HPPIN Mfr. Dese.
0960-0397 03283 ~ ~ c 1 2 q z 0 0 3 1816-1008 01698 ~ ~ ~ 2 8 ~ 4 2 s MB7124HMP 0271 ER2055
0980-0790 08779 MF4128F3 DAP 00 1816-1032 02910 N82S123N AM27S49DC-T 03811 D2764-4
1813-0018 06438 31 121120 1816-1054 02910 N82S185F MBM10474A-TZ 06347 HM6116LP-3
1813-0034 03714 IH5010CPD 1816-1055 01698 TBP28S42N MBM10474A-lOZ 03811 P2114AL-4
1813-0041 t3406 LH0042CH
r
1816-1089 03406 DM74LS189N AM27S19APC 06344 MB8118-12P
1813-0048 03285 751N 1816-1137 01698 TPB24SlON AM27LS19PC 06344 TC5518CP-20 ~
~~8118.15
1813-0054 03406 AH0154D 1816-1141 01698 SN74188AN CYlOE47LL-5JC 06354
1813-0057 03406 LH0024CH 1816.1142 02910 N82SlhlF 10E422L-5JC 02037 MCM68764C
1813-0058 03406 LH0021CK 1816.1153 01698 TBPl8S030N SY10422-3HCF 06347 HM6116LP-2
1813-0082 00046 PIC646 1816-1160 02910 N82S181F MBM10484A-8C-G 01795 SYPPlllA
1813-0083 00046 pic601 1816-1162 02910 N82S181N isis-005 02910 CG725Y MASKED 06354 TC5514APL-3
1813-0084 00046 PIC611 1816-1163 02910 N82S141F 1818-0061 03406 MM5241ABLN 02037 MCM68766C
TKM314Ap-1
1813-0092 05436 DACBO-CCD-V 1816-1174 01698 TBP18SA030N 1818-0093 02237 3341Dc 1818-1824 06354
1813-0093 02237 UA78H12SC 1816-1193 02910 N82S2708F 1818-0094 00575 PR1472B-01 1818-1845 06344 MBM8128A-1OP
1813-0094 05436 DAC80-CBI-I (SEL'D) 1816-1299 02910 N82S191F 1818-0095 00575 PT1482B-01 1818-1877 06344 MB8128 15P
1813-0098 05436 20917 1816-1308 02237 93L422FC 1818-0102 01698 TMS4103NC 1818-1887 03811 D2148HL-3 X7511
1813-0100 02237 UA78H05SC 1816-1329 01698 TBP28S46N 1818-0103 01698 TMS403OJL 1818-1888 01698 TMS2532-30JL
1813-0105 06861 DAC~O-CBI-v 1816-1334 02237 93422Dc 1818-0108 02037 6605L-1 1818-1960 04078 02764-3
MK4801AN-2
1813-0109 00046 PIC625 1816-1335 02037 MCM10152L 1818-0115 03811 P1103A 1818.1966 03811
1813-0110 00046 PIC626 1816-1338 02237 F10145ADc 1818-0135 02037 MCM68UOS 1818-1967 04078 MK4801P.l-4
1813-0114 02598 PIC645 1816-1339 03406 DM86S64CABIN 1818-0140 03811 P2112A-4 1818-1968 06354 TC5517CPL-20
1813-0115 00046 PIC600 1816-1358 01698 TBP24SAlON 1818-0146 01698 RIS405OJL SELCTD 1818.1969 06347 HM6267P
1813-0118 05436 DACBO-CBI-I (SEL'D) 1816-1371 04092 6382815 1818-0165 03811 c2107c SELECTED 1818-1974 09768 MSM5128AS-15
1813-0123 02237 UA78HGKC 1816-1382 03799 HM~-7621-5 1818-0197 03794 ~ ~ 9 1 ~ 1 1 ~ ~ c 1818-1981 06354 TC5518CPL-20
1813-0124 02237 UA78H15KC 1816-1388 01698 TBP28L22N DISCONTINl JED IN USA 1818-0198 03406 MM2102AN-4L 1818-1982 06344 MBM2732A-30
D2815-4
1813-0127 02237 UA79HGKC 1816-1390 02037 MCM10147L 1818-0199 03794 ~ ~ 9 1 1 2 ~ ~ c 1818-1985 03811
1813-0132 06861 NNDACilCSB-I 1816-1406 03794 AM27S27E-2 1818-0215 03794 ~ ~ 9 1 1 2 c ~ c 1818-1998 01698 TMS2564-45JL
1813-0133 02838 7162 1816-1416 03799 HM1-7611-5561 1818-0237 02910 N2513N 1818-1999 03811 D2764-2
1813-0138 02037 m 5 9 2 1816-1418 02910 N82S129F 1818-0254 02910 N2516N 1818-2702 03811 D2716-2
1813-0140 05436 SDM857FX 1816-1430 02037 MCMlOl45L SELEFW 1818-0277 03794 AM2813ADc 1818-3005 08779 M5K4164AP-15
HM4864P-3
1813-0150 03714 ICM7209IPA 1816-1434 02037 MCM10146L 1818-0294 03794 A M ~ ~ L ~ ~ C P C 1818-3006 06347
1813-0155 10321 ADC-HZlZBGC (SELECTED) 1816-1435 02037 MCM10143L 1818-0317 02037 MCM4027AC2 1818-3013 06347 HM6147HP-35
1813-0177 03285 ADDACBO-V 1816-1436 03406 DM74S288N 1818-0318 03811 c2101-1 1818-3021 03811 D27128-4
1813-0211 02037 MIAllO 1816-1446 03794 AM27S03Dc S E L E F W 1818-0320 03811 P2101-2 1818-3022 10443 D2732A
1818-3022
1813-0212 02037 MWA120 1816-1447 02037 MCM10139L 1818-0322 03794 AM91L12Apc 1818-3023 03811
1813-0213 02037 ~ 1 ~ 1 3 0 1816-1451 02290 29631ADc 1818-0332 03811 ~ 2 1 1 5 ~ ~ 1818-30411 03811 D2817
1813-0214 02037 MIA210 1816.1456 02037 MCM10149L 1818-0336 02037 MCM6572L 1818-3052 03811 D2149H-2
1813-0215 02037 MWA220 1816-1458 02910 N82S19F 1818-0340 06347 HM4716A-4 1818-3059 08779 M5X4164ANP-15
1813-0216 02037 ~ 1 ~ 2 3 0 1816-1459 06347 HMlO470 1818-0342 03811 P2101A-4 1818-3076 03811 D27128
1813-0217 02037 MIA310 1816-1460 06344 MBM10415ABZ 1818-0343 03794 ~ ~ 4 9 1 0 1 ~ ~ ~ 1818-3118 10420 IMS1420S-55
1813-0218 02037 MIA320 1816-1461 02910 N10149F 1818-0348 03794 ~ ~ 9 1 0 2 ~ ~ 1818-3136 06344 MBM27C64-252
1813-0219 02037 MIA330 1816-1462 06347 HM10422 1818-0381 03811 P2111A-2 181.8-3138 00039 UPD2167D-2
1813-0232 03285 AD5455 1816-1467 03799 HM3-7643-5 1818-0390 03714 IM65X08IJE 1818-3154 03811 027128-3
1813-0251 05436 DAC71-CSB-I 1816-1468 03794 AM27Sl9Dc 1818-0425 03811 P2101A-2 1818-3159 06347 HM6147LP
1813-0257 03285 A D 5 7 4 m 1816.1469 02237 F100142DC 1818-0438 03811 P2114A-5 1818-3160 03406 NMc27c16q-45
1813-0264 05436 ADC8OACZ-I2(PER HP nV0) 1816.1475 02910 N82S137AN 1818-0439 03799 HM1-65618-9 1818-3162 04078 MK4801AJ-70
1813-0283 05436 DAC71-CSH-V 1816-1481 03799 HM1-7649A-5 1818-0443 03811 P2114A-6 1818-3163 01698 TMS4016-20iiL
1813-0310 04077 CH1710-01 1816-1482 02910 N82S131F 1818-0492 03811 P2114A-4 1818-3164 10572 X2816BP
1813-0311 04077 CH1720-01 1816-1492 06344 MBM10474Z 1818-0497 03799 HM1-6551-9 1818-3165 10572 X2210D
1813-0312 04077 CH1730-01 1816-1495 03794 AM27S07APC 1818-0498 03811 D2716 1818-3166 06344 MB8264A-l2P
1813-0313 04077 CH1740-01 1816-1512 03794 AM27S291Dc 1818-0509 06347 HM4716A-2 1818-3172 02037 MCM68766C-35
1813-0315 03291 GPD-1003 1816-1513 03406 DM87S191J 1818-0553 03811 P2112A 1818-3174 06347 HM6267LP-45
1813-0316 03291 190-507 1816-1516 03794 AM27S35Dc 181fl-0562 03811 P2114A-5 1818-3181 00039 UPD446C-2
1813-0317 03291 wo-561 1816-1517 02910 N82S191N 1818-0566 03947 2051 1818-3183 06347 HM6264ALP-15
1813-0318 03291 GPD-410 1816-1532 06347 HM2112 1818-0630 04181 NCM7040L 1818-3184 10420 IMS1420P-45
1813-0319 03291 GPD-420 1816-1536 04092 C674015 FSLllxED 1818-0643 03811 P2114A-6 1818-3185 06354 TC5565PL
1813-0322 05436 ADC76JG 1816-1538 01698 SN74LS219AN 1818-0695 03811 P5101L-I 1818-3186 03406 NMC27C32Q '45
1813-0361 02237 UA78PO5SC 1816-1543 06344 MBH10474-4A5Z 1818-0696 03811 D8155H 1818-3197 10572 IX221OD
r 1813-0385 03291 GPD-430
1813-0410 03755 DAC9377-16-6
1813-0437- 05436 OPAlllBM
r
9
313-0439 -03 1 VM-2012
-
1813-0444 03291 WO-2024
1813-0445 03291 DTO-2023
r816-1544 06344 SB0204C
1816-1547 01698 TBP28L22J
1816-1548 03799 HM1-7649A-5
1816-1552 02237 F100422Dc
1816-1554 02037 MClOH145L
1816-1555 06347 HM10422-7
1818-0700 02037 MCM6581P
1818-C701 02037 MCM68AlOP
P5101L
21LO2FPC
TMS2532-455L
1818-3198
1818-3214
1818-3220
1818-3222
1818-3229
063h'r
01698
10572
06344
Ob344
HM6264AP-15
TMS4416-1511'
X2804AD-45
MB81C68A-35P
MBM27C64-252
~2115~ 1818-3286 06354 TC5518CPL-20
UPD4016C-1
1813-0446 03291 W O - 5 1 7 1816-1556 03811 D3628A-1 D2716 1818-3298 00039
1813-0447 03291 WO-533 1816 1558 03794 AM27S191Dc D2147H 1818-3302 03811 D27256
1813-0450 05436 201021 1816-1561 03794 AM27S45DC 02732 1818-3303 10420 IMS1420P-55
1813-0468 11596 ~ ~ 1 6 0 2 1816-1562 03794 AM27S29Dc WS2516-35JL 1818-3305 06354 TC5565APL-15
1813-0469 11596 CT3731 1816-1563 02237 74F189FC HM3-6514-9 1818-3307 06344 MB81256-l2P
MB81256-15P
1813-0476 11604 CLC220IOlG 1816-1564 02910 N82S16N. C8755A 1818-3308 06344
1813-0485 10421 RTC-58321 1816-1565 03794 AM27S03PC HM3-6514-5 1818-3309 08779 M5M4256S-12
1813-0486 03285 HOS-100AH 1816-1566 03794 AM27S25DC HM1-6514-9 1818-3310 08779 M5M4256S-15
IMS1400S-45
1813-0489 11688 5D15.060 1816.1567 03794 AM27S29PC 1818-1009 03799 HM3-6561-5 1818-3317 10420
1813-0490 11688 5S5.600 1816.1569 06344 MB7144HZ 1818-1012 02237 4725BPC