International Rectifier IR2130 free download

File name ir2130.pdf

Data Sheet No. PD-6.019F IR2130 3-PHASE BRIDGE DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for all channels n Over-current shutdown turns off all six drivers n Independent half-bridge drivers n Matched propagation delay for all channels n Outputs out of phase with inputs Product Summary VOFFSET IO+/VOUT ton/off (typ.) Deadtime (typ.) 600V max. 200 mA / 420 mA 10 - 20V 675 & 425 ns 2.5 µs Description The IR2130 is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with 5V CMOS or LSTTL outputs. A ground-referenced operational amplifier provides analog feedback of bridge current via an external current sense resistor. A current trip function which terminates all six outputs is also derived from this resistor. An open drain FAULT signal indicates if an over-current or undervoltage shutdown has occurred. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use at high frequencies. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operate up to 600 volts. Packages Typical Connection CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-135 IR2130 bsoiuue MaximumiRbtongs Absxlmtm Matimus iadicgt nuitaie s stainsdblymnt heco dawaiehtdamhge eoiteemdyvocc ma lc ur.tAll valrageepara rtebs aeuaesollate oetages rdftr nSe. To VS0. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Additional information s sFognrin 5iguheo g0 t3riuёhP5r. eyibil Vi1h2S3 Vi1,2S3 V HOg, ,i VCd V S VLO1,2,3 VIN VFLT VCtO rCtdlSwdb Pe raёaaeuer DnfMnntioa H gl aiiegFloptin outpmyёVol3a5e H gl aidegFOoften OftsetёVBl,a,e eiFhoStde loapitgVOutaue Volt2g3 on ioeia diLegicuFixydVSlpale -o.tёg5 LugdcVGro-n2 Low Side Output Voltage Logic Input Voltage (HIN1,2,3 , LIN1,2,3 & ITRIP) FAULT Output Voltage Oae amilnfl A plipitrVOutauu ёoSt ge OaeramilnfleA pnieitrnI vnrui goItput VVlSa-e AlOowael uffsyt Slpale Voatsge tr--n5iёn/ PawkrgD soier iins@pTt on 2 TAё2+ 5eC (28PLeaё .Ii) (28ILea-- 1O6C) 44 CeёdёP.Ci) TeeimtlnRes suanci, Jtn tmon no Ambient (28 Lead DIP) (28 Lead SOIC) (44 Lead PLCC) Junction Temperature Storage Temperature Lead ueep(rotdre nS,l1e iego d0)s--con0s) Valoe MiU. -0.S V 152V31- 23 -S1,3,V 1 2.3 -0S3 ё CC 25 -0.3 VSS - 0.3 3SV C +.0 VёSC- 0 3 3SV C +.3 s -- ё -- -- -- -- -- -55 ґ Msxё 52, +B0,3,ё + 1.3 + B0,3,i + C.3 2o ViC + 0.3 VCC + 0.3 VCC + 0.3 3Ci V A.3 ViCV+A0.3 3 C ё V /.t 50 1.5 1.( 2.0 83 78 63 150 150 ё0` Bn,t, V V/nc 4 RaA °C/W TJ TS TL eC Recommended Operating Conditions The Input/Output logic tim