. Electronic Components Datasheets 2n3846 2n3847 free download

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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/412 Devices Qualified Level JAN 2N3846 2N3847 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N3846 2N3847 Units Collector-Emitter Voltage VCEO 200 300 Vdc Collector-Base Voltage VCBO 300 400 Vdc Emitter-Base Voltage VEBO 10 Vdc Collector Current IC 20 Adc Total Power Dissipation @ TA = +250C (1) 4.0 W PT @ TC = +1000C (2) 150 W Operating & Storage Temperature Range 0 Top, Tstg -65 to +200 C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit TO-63* Thermal Resistance, Junction-to-Case 0 RJC 0.5 C/W 1) Derate linearly 26.6 mW/0C to +1750C 2) Derate linearly 2 W/0C to +1750C *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc; IB = 0 2N3846 V(BR)CEO 200 Vdc 2N3847 300 Collector-Emitter Cutoff Current VCE = 300 Vdc; VBE = 0 2N3846 ICES 2 mAdc VCE = 400 Vdc; VBE = 0 2N3847 2 Collector-Emitter Cutoff Current VCE = 200 Vdc; IB = 0 2N3846 ICEO 5 mAdc VCE = 300 Vdc; IB = 0 2N3847 5 Emitter-Base Cutoff Current