. Electronic Components Datasheets bfs25a cnv free download

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DISCRETE SEMICONDUCTORS DATA SHEET BFS25A NPN 5 GHz wideband transistor Product specification December 1997 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A FEATURES PINNING Low current consumption PIN DESCRIPTION Low noise figure Code: N6 Gold metallization ensures 1 base handbook, 2 columns 3 excellent reliability 2 emitter SOT323 envelope. 3 collector DESCRIPTION 1 2 NPN transistor in a plastic SOT323 Top view MBC870 envelope. It is designed for use in RF amplifiers and oscillators in pagers and pocket Fig.1 SOT323. phones with signal frequencies up to 2 GHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 8 V VCEO collector-emitter voltage open base 5 V IC DC collector current 6.5 mA Ptot total power dissipation up to Ts = 170 C; note 1 32 mW hFE DC current gain IC = 0.5 mA; VCE = 1 V; Tj = 25 C 50 80 200 fT transition frequency IC = 1 mA; VCE = 1 V; f = 1 GHz; 3.5 5 GHz Tamb = 25 C GUM maximum unilateral power gain Ic = 0.5 mA; VCE = 1 V; f = 1 GHz; 13 dB Tamb = 25 C F noise figure Ic = 0.5 mA; VCE = 1 V; f = 1 GHz; 1.8 dB Tamb = 25 C LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNI