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SEMICONDUCTOR KF5N50FZA/FSA N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.4 @VGS = 10V Qg(typ) = 12nC trr(typ) = 150ns (KF5N50FSA) trr(typ) = 300ns (KF5N50FZA) MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS 30 V @TC=25 5.0* ID Drain Current @TC=100 2.9* A Pulsed (Note1) IDP 13* Single Pulsed Avalanche Energy EAS 270 mJ (Note 2) Repetitive Avalanche Energy EAR 8.6 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 20 V/ns (Note 3) Drain Power Tc=25 37.9 W PD Dissipation Derate above 25 0.30 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 3.3 /W Thermal Resistance, Junction-to- RthJA 62.5 /W Ambient * : Drain current limited by maximum junction temperature. PIN CONNECTION 2010. 8. 25 Revision No : 0 1/6 KF5N50FZA/FSA ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 500 - - V Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.55 - V/ Drain Cut-off Current IDSS VDS=500V, VGS=0V, - -