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SEMICONDUCTOR KF5N50FZA/FSA
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
VDSS= 500V, ID= 5.0A
Drain-Source ON Resistance : RDS(ON)=1.4 @VGS = 10V
Qg(typ) = 12nC
trr(typ) = 150ns (KF5N50FSA)
trr(typ) = 300ns (KF5N50FZA)
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS 30 V
@TC=25 5.0*
ID
Drain Current @TC=100 2.9* A
Pulsed (Note1) IDP 13*
Single Pulsed Avalanche Energy EAS 270 mJ
(Note 2)
Repetitive Avalanche Energy EAR 8.6 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 20 V/ns
(Note 3)
Drain Power Tc=25 37.9 W
PD
Dissipation Derate above 25 0.30 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 3.3 /W
Thermal Resistance, Junction-to-
RthJA 62.5 /W
Ambient
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
2010. 8. 25 Revision No : 0 1/6
KF5N50FZA/FSA
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 500 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.55 - V/
Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 25V, VDS=0V - - 10
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=2.5A - 1.15 1.4
Dynamic
Total Gate Charge Qg - 12 -
VDS=400V, ID=5A
Gate-Source Charge Qgs - 2.4 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 5.4 -
Turn-on Delay time td(on) - 22.5 -
VDD=250V
Turn-on Rise time tr - 29 -
RL=50 ns
Turn-off Delay time td(off) - 58 -
RG=25 (Note4,5)
Turn-off Fall time tf - 18 -
Input Capacitance Ciss - 430 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 71 - pF
Reverse Transfer Capacitance Crss - 7.5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 5
VGS Pulsed Source Current ISP - - 20
Diode Forward Voltage VSD IS=5A, VGS=0V - - 1.4 V
KF5N50FZA - 300 -
Reverse Recovery Time trr ns
KF5N50FSA IS=5A, VGS=0V, - 150 -
KF5N50FZA dIs/dt=100A/ - 4.8 -
Reverse Recovery Charge Qrr C
KF5N50FSA - 0.42 -
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=19.5mH, IS=5A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 5A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
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