Philips pbss305pz free download

File name pbss305pz.pdf

PBSS305PZ 80 V, 4.5 A PNP low VCEsat (BISS) transistor Rev. 02 -- 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS305NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -80 V IC collector current - - -4.5 A ICM peak collector current single pulse; - - -9 A tp 1 ms RCEsat collector-emitter saturation IC = -4 A; [1] - 61 87 m resistance IB = -200 mA [1] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBSS305PZ 80 V, 4.5 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 base 4 2, 4 2 collector 3 emitter 1 4 collector 1 2 3 3 sym028 3. Ordering information Table 3. Orderi