HT Semiconductor 2sa1203 free download

File name 2sa1203.pdf

2SA1 203 SOT-89-3L TRANSISTOR(PNP) 1. BASE FEATURES Complementary to 2SC2883 2. COLLECTOR Small Flat Package 3. EMITTER Audio Frequency Amplifier Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1.5 A PC Collector Power Dissipation 500 mW RJA Thermal Resistance From Junction To Ambient 250 /W Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -1mA,IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA DC current gain hFE VCE=-2V, IC=-500mA 100 320 Collector-emitter saturation voltage VCE(sat) IC=-1.5A,IB=-30mA -2 V Base-emitter voltage VBE VCE=-2V, IC=-500mA -1 V Collector output capacitance Cob VCB=-10V,IE=0, f=1MHz 50 pF Transition frequency fT VCE=-2V,IC= -500mA 120 MHz