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STP80NF12 N-channel 120 V, 0.013 , 80 A, TO-220 STripFETTM II Power MOSFET Features RDS(on) Type VDSS ID max STP80NF12 120 V < 0.018 80 A Exceptional dv/dt capability 3 100% avalanche tested 2 1 Application oriented characterization TO-220 Application Switching applications Description Figure 1. Internal schematic diagram This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements. Table 1. Device summary Order code Marking Package Packaging STP80NF12 P80NF12 TO-220 Tube November 2008 Rev 7 1/12 www.st.com 12 Contents STP80NF12 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuit ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STP80NF12 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 120 V