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STP80NF12
N-channel 120 V, 0.013 , 80 A, TO-220
STripFETTM II Power MOSFET
Features
RDS(on)
Type VDSS ID
max
STP80NF12 120 V < 0.018 80 A
Exceptional dv/dt capability
3
100% avalanche tested 2
1
Application oriented characterization
TO-220
Application
Switching applications
Description
Figure 1. Internal schematic diagram
This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for telecom and computer applications.
It is also intended for any applications with low
gate drive requirements.
Table 1. Device summary
Order code Marking Package Packaging
STP80NF12 P80NF12 TO-220 Tube
November 2008 Rev 7 1/12
www.st.com 12
Contents STP80NF12
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STP80NF12 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 120 V
VGS Gate-source voltage